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Home  Transistors - FETs, MOSFETs - Single  2N7002E Datasheets | Transistors - FETs, MOSFETs - Single N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)

Jan 5 2021

2N7002E Datasheets | Transistors - FETs, MOSFETs - Single N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)

Product Overview

Image:
2N7002E
Manufacturer Part#: 2N7002E
Product Category: Transistors - FETs, MOSFETs - Single
Stock: No
Manufacturer: Panasonic Electronic Components
Description: N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)
Datasheet: 2N7002E
Package: TO-236-3, SC-59, SOT-23-3
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order
Send RFQ: Inquiry

2N7002E Images are for reference only.

2N7002E

CAD Models

Product Attributes

Package / Case: TO-236-3 SC-59 SOT-23-3
Mfr: Panasonic Electronic Components
Operating Temperature: 150°C (TJ)
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 350mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drive Voltage (Max Rds On Min Rds On): 4.5V 10V
Rds On (Max) @ Id Vgs: 3Ohm @ 100mA 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Vgs (Max): ±20V
FET Feature: -
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V

Descriptions

There is no relevant information available for this part yet.

FEATURES

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Low On-Resistance

Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability

Environmental & Export Classifications

Description Value
Moisture Sensitivity Level (MSL): 1 (Unlimited)
ECCN: EAR99
HTSUS: 8541.21.0095

Documents & Media

Datasheets: 2N7002E
Featured Product: Wearables Technology Components
PCN Obsolescence/ EOL: Multiple Devices 09/Jun/2017
PCN Part Status Change: Multiple Devices NRND 02/May/2017
HTML Datasheet: 2N7002E
EDA / CAD Models: 2N7002E by Ultra Librarian

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
2N7002E 2N7002E Panasonic Electronic Components N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236) On Order

N/A

2N7002E 2N7002E Vishay Siliconix Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET On Order

N/A

Popularity by Region

  • 1. Sweden
    100
  • 2. Dominica
    99
  • 3. South Africa
    94
  • 4. Russia
    92
  • 5. Estonia
    92
  • 6. Lithuania
    91
  • 7. Denmark
    91
  • 8. Vietnam
    90
  • 9. Belarus
    90
  • 10. Canada
    89
  • 11. Latvia
    87
  • 12. France
    87
  • 13. United Arab Emirates
    87
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    87
  • 15. Luxembourg
    87
  • 16. Belgium
    85
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    85
  • 18. Saudi Arabia
    85
  • 19. Turkey
    85
  • 20. Mexico
    85
  • 21. Taiwan
    85
  • 22. Peru
    85
  • 23. Italy
    85
  • 24. Norway
    85
  • 25. Argentina
    85
  • 26. Democratic Republic of the Congo
    85
  • 27. Portugal
    85
  • 28. Zimbabwe
    85
  • 29. Bulgaria
    85
  • 30. Cyprus
    85
  • 31. Australia
    85
  • 32. Ukraine
    84
  • 33. Pakistan
    84
  • 34. Philippines
    84
  • 35. Jordan
    84
  • 36. Moldova
    83
  • 37. Uzbekistan
    83
  • 38. Kenya
    83
  • 39. El Salvador
    83
  • 40. Thailand
    83
  • 41. North Macedonia
    83
  • 42. Egypt
    82
  • 43. Austria
    82
  • 44. Hungary
    82
  • 45. Indonesia
    82
  • 46. Israel
    82
  • 47. Romania
    82
  • 48. Singapore
    82
  • 49. Finland
    82
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    82
  • 51. Colombia
    82
  • 52. Georgia
    82
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    82
  • 54. Bolivia
    82
  • 55. Cameroon
    82
  • 56. Venezuela
    82
  • 57. Bosnia and Herzegovina
    82
  • 58. Algeria
    82
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    82
  • 60. Nigeria
    82
  • 61. United States
    81
  • 62. China
    81
  • 63. Malta
    81
  • 64. Ghana
    81
  • 65. Kazakhstan
    81
  • 66. Slovakia
    80
  • 67. Switzerland
    80
  • 68. United Kingdom
    80
  • 69. Spain
    79
  • 70. Croatia
    79
  • 71. Trinidad and Tobago
    78
  • 72. Slovenia
    78
  • 73. Morocco
    78
  • 74. Greece
    78
  • 75. Serbia
    78
  • 76. Armenia
    77
  • 77. Ireland
    77
  • 78. India
    77
  • 79. Mauritius
    76
  • 80. Jamaica
    76
  • 81. Reunion
    75
  • 82. Chile
    75
  • 83. Madagascar
    75
  • 84. Bangladesh
    74
  • 85. Puerto Rico
    74
  • 86. Malaysia
    73
  • 87. Azerbaijan
    73
  • 88. Germany
    72
  • 89. South Korea
    72
  • 90. Poland
    72
  • 91. Honduras
    72
  • 92. Yemen
    71
  • 93. Japan
    70
  • 94. Palestinian Territory
    70
  • 95. Anguilla
    70
  • 96. Uruguay
    68
  • 97. Brazil
    67
  • 98. Hong Kong
    67
  • 99. Netherlands
    67
  • 100. Nepal
    65
  • 101. Ethiopia
    64
  • 102. Dominican Republic
    62
  • 103. Uganda
    62
  • 104. Panama
    62
  • 105. Bhutan
    40
  • 106. Sri Lanka
    40

2N7002E Popularity by Region

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FAQ:

what is 2n7002?

The 2N7002 is a low voltage, low current Logic Level N-channel MOSFET. Because of its low on-state resistance and low input capacitance it is used in power management applications. The MOSFET can be easily controlled by 3.3V or 5V system voltage since it has low threshold voltage.

What is an N channel Mosfet?

A N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. ... An enhancement-type MOSFET is the opposite. It is normally off when the gate-source voltage is 0 (VGS=0).

How does AP Channel Connect to Mosfet?

To turn on a P-Channel Enhancement-type MOSFET, apply a positive voltage VS to the source of the MOSFET and apply a negative voltage to the gate terminal of the MOSFET (the gate must be sufficiently more negative than the threshold voltage across the drain-source region (VG DS).

Related Articles

Introduction to 2N7002: N Channel Logic Level MOSFET

Billily 3 Dec 2020  721

DescriptionThe 2N7002 is a logic level MOSFET with a low on-state resistance. The mosfet has a low gate to source threshold voltage of 2.1V typically this makes the mosfet suitable even for ...

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2N7000 Transistor: Circuit, Equivalent, Replacement [Video]

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DescriptionThe 2N7000 is a N-Channel Enhancement Mode Field Effect Transistor, a.k.a. MOSFET for voltage controlled small signal switching. 2N7000 N Channel Enhancement Mode MOSFET Switch Circuit B...

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2N7002E
N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Package / Case: TO-236-3 SC-59 SOT-23-3
Mfr: Panasonic Electronic Components
Operating Temperature: 150°C (TJ)
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 350mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drive Voltage (Max Rds On Min Rds On): 4.5V 10V
Rds On (Max) @ Id Vgs: 3Ohm @ 100mA 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Vgs (Max): ±20V
FET Feature: -
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V

There is no relevant information available for this part yet.

FEATURES

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Low On-Resistance

Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability

There is no relevant information available for this part yet.