FEATURES
SCHOTTKY BARRIER RECTIFIER 3.0 AMPERE 200 VOLTS
This device employs the Schottky Barrier principle in a large area metalïtoïsilicon power diode. Stateïofïtheïart geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with JïBend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very High Blocking Voltage ï 200 V
• 175°C Operating Junction Temperature
• GuardïRing for Stress Protection
• NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements: AECïQ101 Qualified and PPAP Capable
• All Packages are PbïFree*
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.