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QRD1114 Datasheets | Optical Switches Optical Switches, Reflective, Phototransistor Output PHOTO TRANS

By apogeeweb, QRD1114, QRD1114 Datasheet,QRD1114 PDF,ON Semiconductor / Fairchild

Product Overview

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QRD1114
Manufacturer Part#: QRD1114
Product Category: Optical Switches
Stock: On Order
Manufacturer: ON Semiconductor / Fairchild
Description: Optical Switches, Reflective, Phototransistor Output PHOTO TRANS
Datasheet: N/A
Package: N/A
Minimum: 1
Quantity: On Order

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Product Attributes

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Manufacturer: ON Semiconductor
Product Category: Optical Switches, Reflective, Phototransistor Output
RoHS: Details
Sensing Distance: 1.27 mm
Collector- Emitter Voltage VCEO Max: 30 V
Maximum Collector Current: 1 mA
Vf - Forward Voltage: 1.7 V
Vr - Reverse Voltage: 5 V
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 85 C
Mounting Style: Through Hole
Series: QRD1114
Packaging: Bulk
Height: 4.65 mm
Length: 6.1 mm
Output Type: Phototransistor
Sensing Method: Reflective
Wavelength: 940 nm
Width: 4.39 mm
Brand: ON Semiconductor / Fairchild
Number of Channels: 1 Channel
Fall Time: 50 us
If - Forward Current: 20 mA
Pd - Power Dissipation: 100 mW
Product Type: Optical Switches, Reflective, Phototransistor Output
Rise Time: 10 us
Factory Pack Quantity: 100
Subcategory: Optical Switches
Part # Aliases: QRD1114_NL
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Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:QRD1114 Compare: Current Part Manufacturers:On semiconductor Category: Description: ReflecN/Ave photo interrupter, phototransistor, through hole, 1.27mm, 50ma, 5 vr, 1.7 vf
Mfr.Part#:QRD1114 Compare: QRD1114 VS QRD1114 Manufacturers:Qt optoelectronics Category: Description: ReflecN/Ave object sensor

Descriptions

QRD1114 Series 30 V 50 mA Phototransistor Reflective Object Sensor:Future Electronics
OPTO SWITCH, REFLECTIVE; No. of Channels:1; Optocoupler Output Type:Phototransistor; Input Current:20mA; Output Voltage:30V; Opto Case Style:Through Hole; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Forward Current If:50mA; Forward Current If Max:50mA; Forward Voltage VF Max:1.7V; Operating Temperature Range:-40°C to +85°C; Output Type:Phototransistor:element14 APAC
The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon photodarlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113/14. The photodarlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector.:Fairchild Semiconductor

  • Features
  • Product Manufacturer

FEATURES

FEATURES

• Phototransistor Output
• No contact surface sensing
• Unfocused for sensing diffused surfaces
• Compact Package
• Daylight filter on sensor

ON Semiconductor has completed its acquisition of Fairchild. Together, we deliver a more extensive product portfolio of power discretes, ICs and power modules, plus a complete offering of low, mid and high voltage products across the entire voltage spectrum which means more choices for your designs. Together, we provide a stronger presence in the key markets of automotive, industrial and wireless, combined with increased technical and sales support.

  • ECCN/UNSPSC
Description Value
USHTS: 8541408000
CNHTS: 8541409000
MXHTS: 85414001
TARIC: 8541409090
ECCN: EAR99
Description Value
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