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FGH60N60SMD Datasheets | IGBTs - Single IGBT 600V 120A 600W TO247

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Product Overview

Image:
FGH60N60SMD
Manufacturer Part#: FGH60N60SMD
Product Category: IGBTs - Single
Stock: 1654
Manufacturer: ON Semiconductor
Description: IGBT 600V 120A 600W TO247
Datasheet: FGH60N60SMD
Package: TO-247-3
Minimum: 1
Quantity: 1654 PCS

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Product Attributes

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Manufacturer: ON Semiconductor
Series: -
Packaging: Tube
Part Status: Active
IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge Ic: 2.5V @ 15V 60A
Power - Max: 600W
Switching Energy: 1.26mJ (on) 450µJ (off)
Input Type: Standard
Td (on/off) @ 25°C: 18ns/104ns
Test Condition: 400V 60A 3Ohm 15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 120A
Gate Charge: 189nC
Base Part Number: FGH60
Reverse Recovery Time (trr): 39ns
Package / Case:
8-TSSOP (0.173" 4.40mm Width)
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Descriptions

Trans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(3+Tab) TO-247 Rail:Verical
FGH60N60SMD Series 600 V 60 A Through Hole Field Stop IGBT - TO-247-3:Future Electronics
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.:Fairchild Semiconductor
IGBT,N CH,FAST,W/DIO,600V,120A,TO247; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:600W:Farnell

  • Features
  • Product Manufacturer

FEATURES

General Description

Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, SMPS, IH and PFC applications where low conduction and switching losses are essential.

Features

• Maximum Junction Temperature : TJ =175°C
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC= 60A
• High input impedance
• Fast switching
• Tighten Parameter Distribution
• RoHS compliant

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

  • ECCN/UNSPSC
  • Environmental & Export Classifications
  • Documents & Media
Description Value
USHTS: 8541290095
CNHTS: 8541210000
MXHTS: 85412999
TARIC: 8541290000
ECCN: EAR99
Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Documents Media
Datasheets: FGH60N60SMD
PCN Packaging: Tape and Box/Reel Barcode Update 07/Aug/2014
PCN Design/Specification: Mult Devices 24/Oct/2017
Environmental Information: Logo 17/Aug/2017
PCN Assembly/Origin: Material Declaration FGH60N60SMD
Online Catalog: Mult Dev Assembly/DS Chg 6/Jan/2019

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  • Returning/warranty

    Returning

    a.Returns are normally accepted when completed within 365 days from date of shipment,

       please contact customer service for a return authorization.

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