FDS4559 Datasheets | FETs, MOSFETs - Arrays MOSFET N/P-CH 60V 4.5A/3.5A 8-SO -Apogeeweb

FETs, MOSFETs - Arrays

FDS4559 Datasheets | Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 60V 4.5A/3.5A 8-SO

FDS4559 Datasheets | FETs, MOSFETs - Arrays MOSFET N/P-CH 60V 4.5A/3.5A 8-SO

By apogeeweb, FDS4559, FDS4559 Datasheet,FDS4559 PDF,ON Semiconductor

Product Overview

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Manufacturer Part#:	FDS4559
Product Category:	FETs, MOSFETs - Arrays
Stock:	On Order
Manufacturer:	ON Semiconductor
Description:	MOSFET N/P-CH 60V 4.5A/3.5A 8-SO
Datasheet:	FDS4559
Package:	8-SOIC (0.154", 3.90mm Width)
Minimum:	1
Quantity:	On Order

FDS4559 Images are for reference only.

FDS4559

CAD Models

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FDS4559 Footprint

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FDS4559 Symbol

Product Attributes

Product Attributes	Attrinute Value	Search Similar
Manufacturer:	ON Semiconductor
Series:	PowerTrench®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	4．5A 3．5A
Rds On (Max) @ Id Vgs:	55mOhm @ 4．5A 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	650pF @ 25V
Power - Max:	1W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0．154" 3．90mm Width)
Supplier Device Package:	8-SOIC
Base Part Number:	FDS45
Package / Case:	12-VDFN Exposed Pad 12-VFDFN Exposed Pad 12-WDFN Exposed Pad 14-DIP (0．300" 7．62mm) 14-SOIC (0．154" 3．90mm Width) 16-DIP (0．300" 7．62mm) 16-SOIC (0．154" 3．90mm Width) 56-VFQFN Exposed Pad 5-TSSOP SC-70-5 SOT-353 6-PowerPair™ 6-SMD Flat Lead Exposed Pad 6-SSOT Flat-lead SuperSOT™-6 FLMP 6-TSSOP SC-88 SOT-363 6-UDFN Exposed Pad 6-UFBGA DSBGA 6-VDFN Exposed Pad 6-VFDFN Exposed Pad 6-VFLGA 6-XFDFN Exposed Pad 8-DIP (0．300" 7．62mm) 8-PowerLDFN 8-PowerSMD Flat Leads 8-PowerTDFN 8-PowerUDFN 8-PowerVDFN 8-PowerWDFN 8-SMD Flat Lead 8-SOIC (0．154" 3．90mm Width) 8-SOIC (0．154"" 3．90mm Width) 8-TSSOP 8-MSOP (0．118" 3．00mm Width) 8-TSSOP (0．173" 4．40mm Width) 8-TSSOP (0．173"" 4．40mm Width) 8-VDFN Exposed Pad 8-WDFN Exposed Pad D-3 Module EPM15 Module PowerPAK® 1212-8 Dual PowerPAK® SC-70-6 Dual PowerPAK® SO-8 Dual SC-74 SOT-457 SC-74A SOT-753 SOT-1205 8-LFPAK56 SOT-23-6 SOT-23-6 Thin TSOT-23-6 SOT-563 SOT-666 SP1 SP3 SP4 SP6 TO-220-3 Full Pack TO-240AA
Show Similar

Alternative Models

Part	Compare	Manufacturers	Category	Description
Mfr.Part#:FDS4559	Compare: Current Part	Manufacturers:Fairchild	Category:MOSFETs	Description: Trans mosfet n/p-ch 60v 4.5a/3.5a 8pin soic n t/r
Mfr.Part#:FDS4559_F085	Compare: FDS4559 VS FDS4559_F085	Manufacturers:Fairchild	Category:MOSFETs	Description: Trans mosfet n/p-ch 60v 4.5a/3.5a 8pin soic n t/r
Mfr.Part#:IRF7343TRPBF	Compare: FDS4559 VS IRF7343TRPBF	Manufacturers:Infineon	Category:MOSFETs	Description: Soic n+p 55v 4.7a/3.4a
Mfr.Part#:STS4C3F60L	Compare: FDS4559 VS STS4C3F60L	Manufacturers:St microelectronics	Category:MOSFETs	Description: So n+p 60v 4a/3a

Descriptions

N/P-Channel 60 V 55/105 mO Complementary PowerTrench Mosfet - SOIC-8:Future Electronics
Trans MOSFET N/P-CH 60V 4.5A/3.5A 8-Pin SOIC N T/R:Avnet Europe
MOSFET, DUAL, NP, SMD, SO-8; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:4.5A; Current Id Max:4.5A; Drain Source Voltage Vds:60V; Module Configuration:Dual; On Resistance Rds(on):55mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Rds on Measurement:10V:element14 APAC
This complementary MOSFET device is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.:Fairchild Semiconductor

Features
Product Manufacturer

FEATURES

General Description

This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• Q1: N-Channel
4.5 A, 60 V
RDS(on) = 55 mΩ @ VGS = 10V
RDS(on) = 75 mΩ @ VGS = 4.5V
• Q2: P-Channel
–3.5 A, –60 V
RDS(on) = 105 mΩ @ VGS = –10V
RDS(on) = 135 mΩ @ VGS = –4.5V

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

ECCN/UNSPSC
Environmental & Export Classifications
Documents & Media

Description	Value
USHTS:	8541290095
CNHTS:	8541210000
MXHTS:	85412999
TARIC:	8541290000
ECCN:	EAR99

Description	Value
RoHS Status:	ROHS3 Compliant
Moisture Sensitivity Level (MSL):	1 (Unlimited)

Documents	Media
Datasheets:	FDS4559
PCN Design/Specification:	Mold Compound 12/Dec/2007
PCN Packaging:	Logo 17/Aug/2017
Environmental Information:	Mult Devices 24/Oct/2017
Online Catalog:	Mult MSL1 Pkg Rev 20/Dec/2018

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