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MRFE6S9130HR3 Datasheets | FETs, MOSFETs - RF FET RF 66V 880MHZ NI-780

By apogeeweb, MRFE6S9130HR3, MRFE6S9130HR3 Datasheet,MRFE6S9130HR3 PDF,NXP USA Inc.

Product Overview

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MRFE6S9130HR3
Manufacturer Part#: MRFE6S9130HR3
Product Category: FETs, MOSFETs - RF
Stock: On Order
Manufacturer: NXP
Description: FET RF 66V 880MHZ NI-780
Datasheet: MRFE6S9130HR3/HSR3
Package: N/A
Minimum: 1
Quantity: On Order

CAD Models

Product Attributes

Product Attributes Attrinute Value   Search Similar
Manufacturer: NXP USA Inc.
Series: -
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 880MHz
Gain: 19.2dB
Voltage - Test: 28V
Current Rating (Amps): -
Noise Figure: -
Current - Test: 950mA
Power - Output: 27W
Voltage - Rated: 66V
Package / Case: SOT-957A
Supplier Device Package: NI-780H-2L
Base Part Number: MRFE6
Current Rating (Amps):
1.2µA
Package / Case:
0402 (1005 Metric)
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Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:MRFE6S9130HR3 Compare: Current Part Manufacturers:Nxp Category:Transistors Description: Mosfet rf n-ch 27w ni-780 - mrfe6s9130hr3
Mfr.Part#:MRF8S9220HR3 Compare: MRFE6S9130HR3 VS MRF8S9220HR3 Manufacturers:Nxp Category:Transistors Description: Single w-cdma lateral n-channel rf power mosfet, 920-960mhz, 65w avg., 28v
Mfr.Part#:MRFE6S9125NBR1 Compare: MRFE6S9130HR3 VS MRFE6S9125NBR1 Manufacturers:Nxp Category:MOSFETs Description: Rf power transistor,865 to 960mhz, 125w, typ gain in db is 20.2 @ 880mhz, 28v, ldmos, sot1735
Mfr.Part#:MRF8S9102NR3 Compare: MRFE6S9130HR3 VS MRF8S9102NR3 Manufacturers:Nxp Category:MOSFETs Description: Single w-cdma lateral n-channel rf power mosfet, 865-960mhz, 28w avg., 28v
  • Features
  • Product Manufacturer

Designed for N-CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications.

• Typical Single-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., f = 880 MHz, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 19.2 dB
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — -47.6 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is driving innovation in the secure connected vehicle, end-to-end security & privacy and smart connected solutions markets. Built on more than 60 years of combined experience and expertise, the company has 45,000 employees in more than 35 countries. Freescale Semiconductor has been acquired by NXP Semiconductor. Freescale Semiconductor parts are now a part of the NXP family (Dec 2015).

  • Environmental & Export Classifications
  • Documents & Media
Description Value
Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Documents Media
Datasheets: MRFE6S9130HR3/HSR3
PCN Obsolescence/ EOL: RF Devices 28/Jun/2011
HTML Datasheet: MRFE6S9130HR3/HSR3

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  • Returning/warranty

    Returning

    a.Returns are normally accepted when completed within 365 days from date of shipment,

       please contact customer service for a return authorization.

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