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Home  Transistors - FETs, MOSFETs - RF  AFT26H160-4S4R3 Datasheets | Transistors - FETs, MOSFETs - RF FET RF 2CH 65V 2.5GHZ NI880X-4

Jul 23 2020

AFT26H160-4S4R3 Datasheets | Transistors - FETs, MOSFETs - RF FET RF 2CH 65V 2.5GHZ NI880X-4

Product Overview

Image:
AFT26H160-4S4R3
Manufacturer Part#: AFT26H160-4S4R3
Product Category: Transistors - FETs, MOSFETs - RF
Stock: No
Manufacturer: Nxp usa inc.
Description: FET RF 2CH 65V 2.5GHZ NI880X-4
Datasheet: AFT26H160-4S4R3
Package: N/A
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
250: 22911.85000 5727962.50000

AFT26H160-4S4R3 Images are for reference only.

AFT26H160-4S4R3

CAD Models

Product Attributes

Manufacturer: Nxp usa inc.
Series: -
Packaging: Tape & reel (tr)
Part status: AcN/Ave
Transistor type: Ldmos
Frequency: 2.5ghz
Gain: 14.9db
Voltage - test: 28v
Current raN/Ang (amps): -
Noise figure: -
Current - test: 500ma
Power - output: 32w
Voltage - rated: 65v
Package / case: Ni-880x-4l4s-8
Supplier device package: Ni-880x-4l4s-8
Base part number: Aft26

Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:AFT26H160-4S4R3 Compare: Current Part Manufacturers:Nxp Category:MOSFETs Description: Rf power transistor,2496 to 2690mhz, 100w, typ gain in db is 14.9 @ 2496mhz, 28v, ldmos, sot1798
Mfr.Part#:MRF8S26120HR3 Compare: AFT26H160-4S4R3 VS MRF8S26120HR3 Manufacturers:Nxp Category:Transistors Description: Single w-cdma, lte lateral n-channel rf power mosfet, 2620-2690mhz, 28w avg., 28v
Mfr.Part#:MRF6S23100HSR3 Compare: AFT26H160-4S4R3 VS MRF6S23100HSR3 Manufacturers:Nxp Category:Transistors Description: Trans rf mosfet n-ch 68v 3pin ni-780s t/r
Mfr.Part#:MRF8S26120HSR3 Compare: AFT26H160-4S4R3 VS MRF8S26120HSR3 Manufacturers:Nxp Category:Transistors Description: Fet rf n-ch 2.6ghz 28v ni780s last buy day:2016/1/23

Descriptions

airfast rf power ldmos transistor, 2496-2690 mhz, 32 w avg., 28 v:freescale semiconductor
transistor rf fet n-ch 65v 2496mhz to 2690mhz 8-pin ni-880xs t/r:avnet europe
rf power transistor,2496 to 2690 mhz, 100 w, typ gain in db is 14.9 @ 2496 mhz, 28 v, ldmos, sot1798:rfmw
trans rf mosfet n-ch 65v 3-pin ni-780s t/r:verical
fet rf 2ch 65v 2.5ghz ni880x-4:digi-key

ECCN / UNSPSC

Description Value
Ushts: 8541290095
Cnhts: 8541290000
Mxhts: 85412999
Taric: 8541290000
Eccn: Ear99

Environmental & Export Classifications

Description Value
Rohs status: Rohs3 compliant
Moisture sensiN/Avity level (msl): Not applicable

Documents & Media

Datasheets: AFT26H160-4S4R3
Environmental Information: NXP RoHS3 Cert
HTML Datasheet: AFT26H160-4S4R3

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  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Manufacturer: NXP USA Inc.
Series: -
Packaging: Tape & Reel (TR)
Part Status: Active
Transistor Type: LDMOS
Frequency: 2.5GHz
Gain: 14.9dB
Voltage - Test: 28V
Current Rating (Amps): -
Noise Figure: -
Current - Test: 500mA
Power - Output: 32W
Voltage - Rated: 65V
Package / Case: NI-880X-4L4S-8
Supplier Device Package: NI-880X-4L4S-8
Base Part Number: AFT26

airfast rf power ldmos transistor, 2496-2690 mhz, 32 w avg., 28 v:freescale semiconductor
transistor rf fet n-ch 65v 2496mhz to 2690mhz 8-pin ni-880xs t/r:avnet europe
rf power transistor,2496 to 2690 mhz, 100 w, typ gain in db is 14.9 @ 2496 mhz, 28 v, ldmos, sot1798:rfmw
trans rf mosfet n-ch 65v 3-pin ni-780s t/r:verical
fet rf 2ch 65v 2.5ghz ni880x-4:digi-key

There is no relevant information available for this part yet.

There is no relevant information available for this part yet.