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A2I20H060GNR1 Datasheets | FETs, MOSFETs - RF IC TRANS RF LDMOS

By apogeeweb, A2I20H060GNR1, A2I20H060GNR1 Datasheet,A2I20H060GNR1 PDF,NXP USA Inc.

Product Overview

Image:
A2I20H060GNR1
Manufacturer Part#: A2I20H060GNR1
Product Category: FETs, MOSFETs - RF
Stock: On Order
Manufacturer: NXP
Description: IC TRANS RF LDMOS
Datasheet: A2I20H060(G)NR1
Package: TO-270-14 Variant, Gull Wing
Minimum: 1
Quantity: On Order

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Product Attributes

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Manufacturer: NXP USA Inc.
Series: -
Packaging: Tape & Reel (TR)
Part Status: Active
Transistor Type: LDMOS (Dual)
Frequency: 1.84GHz
Gain: 28.9dB
Voltage - Test: 28V
Current Rating (Amps): -
Noise Figure: -
Current - Test: 24mA
Power - Output: 12W
Voltage - Rated: 65V
Package / Case: TO-270-14 Variant Gull Wing
Supplier Device Package: TO-270WBG-15
Base Part Number: A2I20
Current Rating (Amps):
1.2µA
Package / Case:
0402 (1005 Metric)
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Descriptions

Amplifier,1800 to 2200 MHz, 63 W, Typ Gain in dB is 28.4 @ 1840 MHz, 28 V, LDMOS, SOT1722:RFMW
Airfast Rf Power Ldmos Transistors 1805-2170 Mhz, 12 W Avg., 28 V:Newark
RF Amp Module Dual Power Amp 2.2GHz 32V 17-Pin(15+2Tab) TO-270WBG EP T/R:Verical
Power Amp Dual 2200MHz 28.9dB 15-Pin TO-270WB T/R:Avnet

  • ECCN/UNSPSC
  • Environmental & Export Classifications
  • Documents & Media
Description Value
USHTS: 8542330001
CAHTS: 8542330000
CNHTS: 8542319000
MXHTS: 85423301
TARIC: 8542330000
ECCN: EAR99
Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 3 (168 Hours)
Documents Media
Datasheets: A2I20H060(G)NR1
Environmental Information: NXP RoHS3 Cert
HTML Datasheet: A2I20H060(G)NR1

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