Product Overview
| Image: |
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| Manufacturer Part#: | 2N7002PT,115 |
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Stock: | No |
| Manufacturer: | NXP USA Inc. |
| Description: | MOSFET N-CH 60V 0.31A SOT-416 |
| Datasheet: | 2N7002PT Datasheet |
| Package: | SC-75 |
| Minimum: | 1 |
| Lead Time: | 3(168 Hours) |
| Quantity: | On Order |
| Send RFQ: | Inquiry |
2N7002PT,115 Images are for reference only.
CAD Models
Product Attributes
| Manufacturer: | NXP USA Inc． |
| Series: | - |
| Packaging: | Cut Tape (CT) |
| Packaging: | Tape & Reel (TR) |
| Packaging: | Digi-Reel® |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 310mA (Ta) |
| Drive Voltage (Max Rds On Min Rds On): | 5V 10V |
| Rds On (Max) @ Id Vgs: | 1．6Ohm @ 500mA 10V |
| Vgs(th) (Max) @ Id: | 2．4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 0．8nC @ 4．5V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 10V |
| FET Feature: | - |
| Power Dissipation (Max): | 250mW (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SC-75 |
| Package / Case: | SC-75 SOT-416 |
| Base Part Number: | 2N70 |
Descriptions
There is no relevant information available for this part yet.
FEATURES
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Features and benefits
■ Logic-level compatible■ Very fast switching
■ Trench MOSFET technology
■ AEC-Q101 qualified
Applications
■ Relay driver■ High-speed line driver
■ Low-side loadswitch
■ Switching circuits
Environmental & Export Classifications
| Description | Value |
| RoHS Status: | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Documents & Media
| Datasheets: | 2N7002PT Datasheet |
| Environmental Information: | Discrete Semiconductor Selection Guide |
| PCN Obsolescence/ EOL: | NXP RoHS3 Cert |
| PCN Packaging: | Advance Notice SOT416 Devices 02/Sep/2014 |
| HTML Datasheet: | Multiple Devices 29/Dec/2014 |
Distributors
| Image | PartNo | Manufacturer | Descriptions | Stock | Step Price |
|
|
2N7002PT,115 | NXP USA Inc. | MOSFET N-CH 60V 0.31A SOT-416 | On Order | N/A |
|
|
2N7002PT,115 | NXP Semiconductors | 2N7002PT - 60 V， 310 mA N-channel Trench MOSFET SC-75 3-Pin | On Order | N/A |
Popularity by Region
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99. Ethiopia64
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100. Dominican Republic62
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101. Uganda62
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102. Panama62
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103. Macao49
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104. Bhutan39
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- Product Attributes
- Descriptions
- Features
- CAD Models
2N7002PT,115 Popularity by Region
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FAQ:
what is 2n7002?
The 2N7002 is a low voltage, low current Logic Level N-channel MOSFET. Because of its low on-state resistance and low input capacitance it is used in power management applications. The MOSFET can be easily controlled by 3.3V or 5V system voltage since it has low threshold voltage.
What is an N channel Mosfet?
A N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. ... An enhancement-type MOSFET is the opposite. It is normally off when the gate-source voltage is 0 (VGS=0).
How does AP Channel Connect to Mosfet?
To turn on a P-Channel Enhancement-type MOSFET, apply a positive voltage VS to the source of the MOSFET and apply a negative voltage to the gate terminal of the MOSFET (the gate must be sufficiently more negative than the threshold voltage across the drain-source region (VG DS).
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| Manufacturer: | NXP USA Inc． |
| Series: | - |
| Packaging: | Cut Tape (CT) |
| Packaging: | Tape & Reel (TR) |
| Packaging: | Digi-Reel® |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 310mA (Ta) |
| Drive Voltage (Max Rds On Min Rds On): | 5V 10V |
| Rds On (Max) @ Id Vgs: | 1．6Ohm @ 500mA 10V |
| Vgs(th) (Max) @ Id: | 2．4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 0．8nC @ 4．5V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 10V |
| FET Feature: | - |
| Power Dissipation (Max): | 250mW (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SC-75 |
| Package / Case: | SC-75 SOT-416 |
| Base Part Number: | 2N70 |
There is no relevant information available for this part yet.
FEATURES
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Features and benefits
■ Logic-level compatible■ Very fast switching
■ Trench MOSFET technology
■ AEC-Q101 qualified
Applications
■ Relay driver■ High-speed line driver
■ Low-side loadswitch
■ Switching circuits
There is no relevant information available for this part yet.