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Home  Transistors - FETs, MOSFETs - Single  2N7002PT,115 Datasheets | Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.31A SOT-416

Oct 8 2020

2N7002PT,115 Datasheets | Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.31A SOT-416

Product Overview

Image:
2N7002PT-115
Manufacturer Part#: 2N7002PT,115
Product Category: Transistors - FETs, MOSFETs - Single
Stock: No
Manufacturer: NXP USA Inc.
Description: MOSFET N-CH 60V 0.31A SOT-416
Datasheet: 2N7002PT Datasheet
Package: SC-75
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order
Send RFQ: Inquiry

2N7002PT,115 Images are for reference only.

2N7002PT,115

CAD Models

Product Attributes

Manufacturer: NXP USA Inc.
Series: -
Packaging: Cut Tape (CT)
Packaging: Tape & Reel (TR)
Packaging: Digi-Reel®
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Drive Voltage (Max Rds On Min Rds On): 5V 10V
Rds On (Max) @ Id Vgs: 1.6Ohm @ 500mA 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
FET Feature: -
Power Dissipation (Max): 250mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75
Package / Case: SC-75 SOT-416
Base Part Number: 2N70

Descriptions

There is no relevant information available for this part yet.

FEATURES

General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

■ Logic-level compatible
■ Very fast switching
■ Trench MOSFET technology
■ AEC-Q101 qualified

Applications

■ Relay driver
■ High-speed line driver
■ Low-side loadswitch
■ Switching circuits

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Documents & Media

Datasheets: 2N7002PT Datasheet
Environmental Information: Discrete Semiconductor Selection Guide
PCN Obsolescence/ EOL: NXP RoHS3 Cert
PCN Packaging: Advance Notice SOT416 Devices 02/Sep/2014
HTML Datasheet: Multiple Devices 29/Dec/2014

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
2N7002PT-115 2N7002PT,115 NXP USA Inc. MOSFET N-CH 60V 0.31A SOT-416 On Order

N/A

2N7002PT-115 2N7002PT,115 NXP Semiconductors 2N7002PT - 60 V, 310 mA N-channel Trench MOSFET SC-75 3-Pin On Order

N/A

Popularity by Region

  • 1. United States
    100
  • 2. Dominica
    100
  • 3. India
    96
  • 4. Argentina
    94
  • 5. Monaco
    93
  • 6. South Korea
    93
  • 7. Hong Kong
    93
  • 8. Malaysia
    92
  • 9. Norway
    92
  • 10. Russia
    91
  • 11. Sweden
    91
  • 12. Germany
    90
  • 13. Philippines
    90
  • 14. Canada
    89
  • 15. Australia
    89
  • 16. Poland
    88
  • 17. Brazil
    87
  • 18. France
    87
  • 19. Estonia
    87
  • 20. Luxembourg
    87
  • 21. Madagascar
    87
  • 22. Belgium
    86
  • 23. Mexico
    85
  • 24. Taiwan
    85
  • 25. Thailand
    85
  • 26. Vietnam
    85
  • 27. Italy
    85
  • 28. New Zealand
    85
  • 29. Moldova
    84
  • 30. Kazakhstan
    83
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    83
  • 32. Finland
    83
  • 33. El Salvador
    83
  • 34. Latvia
    83
  • 35. Kenya
    83
  • 36. Uzbekistan
    83
  • 37. North Macedonia
    83
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    83
  • 39. China
    82
  • 40. Switzerland
    82
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    82
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    82
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    82
  • 44. Austria
    82
  • 45. Hungary
    82
  • 46. Indonesia
    82
  • 47. Israel
    82
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    82
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    82
  • 50. Singapore
    82
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    82
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    82
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    82
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    82
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    81
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    81
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    80
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    80
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    80
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    79
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    79
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    79
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    79
  • 64. Cyprus
    78
  • 65. United Arab Emirates
    78
  • 66. Armenia
    78
  • 67. Portugal
    78
  • 68. Peru
    78
  • 69. South Africa
    78
  • 70. Slovakia
    78
  • 71. Egypt
    78
  • 72. Reunion
    78
  • 73. Greece
    78
  • 74. Cameroon
    77
  • 75. Morocco
    77
  • 76. Algeria
    76
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    76
  • 78. Serbia
    76
  • 79. Nigeria
    76
  • 80. Sri Lanka
    76
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    76
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    76
  • 83. Jamaica
    76
  • 84. Chile
    75
  • 85. Lithuania
    74
  • 86. Iraq
    74
  • 87. Saudi Arabia
    74
  • 88. Bangladesh
    74
  • 89. Ghana
    74
  • 90. Venezuela
    73
  • 91. Azerbaijan
    72
  • 92. Yemen
    71
  • 93. Honduras
    71
  • 94. Palestinian Territory
    69
  • 95. Anguilla
    69
  • 96. Uruguay
    68
  • 97. Nepal
    65
  • 98. Bosnia and Herzegovina
    65
  • 99. Ethiopia
    64
  • 100. Dominican Republic
    62
  • 101. Uganda
    62
  • 102. Panama
    62
  • 103. Macao
    49
  • 104. Bhutan
    39

2N7002PT,115 Popularity by Region

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FAQ:

what is 2n7002?

The 2N7002 is a low voltage, low current Logic Level N-channel MOSFET. Because of its low on-state resistance and low input capacitance it is used in power management applications. The MOSFET can be easily controlled by 3.3V or 5V system voltage since it has low threshold voltage.

What is an N channel Mosfet?

A N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. ... An enhancement-type MOSFET is the opposite. It is normally off when the gate-source voltage is 0 (VGS=0).

How does AP Channel Connect to Mosfet?

To turn on a P-Channel Enhancement-type MOSFET, apply a positive voltage VS to the source of the MOSFET and apply a negative voltage to the gate terminal of the MOSFET (the gate must be sufficiently more negative than the threshold voltage across the drain-source region (VG DS).

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  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Manufacturer: NXP USA Inc.
Series: -
Packaging: Cut Tape (CT)
Packaging: Tape & Reel (TR)
Packaging: Digi-Reel®
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Drive Voltage (Max Rds On Min Rds On): 5V 10V
Rds On (Max) @ Id Vgs: 1.6Ohm @ 500mA 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
FET Feature: -
Power Dissipation (Max): 250mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75
Package / Case: SC-75 SOT-416
Base Part Number: 2N70

There is no relevant information available for this part yet.

FEATURES

General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

■ Logic-level compatible
■ Very fast switching
■ Trench MOSFET technology
■ AEC-Q101 qualified

Applications

■ Relay driver
■ High-speed line driver
■ Low-side loadswitch
■ Switching circuits

There is no relevant information available for this part yet.