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Home  Transistors - FETs, MOSFETs - Single  2N7002K,215 Datasheets | Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 340MA SOT23

Oct 8 2020

2N7002K,215 Datasheets | Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 340MA SOT23

Product Overview

Image:
2N7002K-215
Manufacturer Part#: 2N7002K,215
Product Category: Transistors - FETs, MOSFETs - Single
Stock: No
Manufacturer: NXP USA Inc.
Description: MOSFET N-CH 60V 340MA SOT23
Datasheet: 2N7002K Datasheet
Package: TO-236AB (SOT23)
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order
Send RFQ: Inquiry

2N7002K,215 Images are for reference only.

2N7002K,215

CAD Models

Product Attributes

Manufacturer: NXP USA Inc.
Series: TrenchMOS™
Packaging: Cut Tape (CT)
Packaging: Tape & Reel (TR)
Packaging: Digi-Reel®
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Drive Voltage (Max Rds On Min Rds On): 4.5V 10V
Rds On (Max) @ Id Vgs: 3.9Ohm @ 500mA 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
FET Feature: -
Power Dissipation (Max): 830mW (Ta)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-236AB (SOT23)
Package / Case: TO-236-3 SC-59 SOT-23-3
Base Part Number: 2N70

Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:2N7002K,215 Compare: Current Part Manufacturers:NXP Category:MOSFETs Description: TO-236AB N-CH 60V 0.34A
Mfr.Part#:2N7002K Compare: 2N7002K,215 VS 2N7002K Manufacturers:NXP Category:MOSFETs Description: Trans MOSFET N-CH 60V 0.34A 3Pin TO-236AB
Mfr.Part#:2N7002LT1G Compare: 2N7002K,215 VS 2N7002LT1G Manufacturers:ON Semiconductor Category:MOSFETs Description: SOT-23 N-CH 60V 0.115A
Mfr.Part#:BSS123LT1G Compare: 2N7002K,215 VS BSS123LT1G Manufacturers:ON Semiconductor Category:MOSFETs Description: SOT-23 N-CH 100V 0.17A

Descriptions

There is no relevant information available for this part yet.

FEATURES

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Features

■ Logic level compatible
■ Subminiature surface mount package
■ Very fast switching
■ Gate-source ESD protection diodes.

Applications

■ Relay driver
■ High speed line driver.

Quick reference data

■ VDS ≤ 60 V
■ Ptot ≤ 0.83 W
■ ID ≤ 340 mA
■ RDSon ≤ 3.9 Ω.

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Documents & Media

Datasheets: 2N7002K Datasheet
PCN Packaging: Lighter Reels 02/Jan/2014
HTML Datasheet: 2N7002K Datasheet
EDA / CAD Models: 2N7002K by Ultra Librarian

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
2N7002K-215 2N7002K,215 NXP USA Inc. MOSFET N-CH 60V 340MA SOT23 On Order

N/A

2N7002K-215 2N7002K,215 NXP Semiconductors TRANSISTOR 340 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal On Order

$0.0800 / $0.2000

Popularity by Region

  • 1. China
    100
  • 2. Hong Kong
    99
  • 3. United States
    99
  • 4. India
    89
  • 5. South Korea
    86
  • 6. Malaysia
    83
  • 7. Taiwan
    83
  • 8. Brazil
    81
  • 9. Canada
    80
  • 10. Russia
    80
  • 11. Singapore
    79
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    79
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    79
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    79
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    77
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    77
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    77
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    76
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    76
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    76
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    76
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    75
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    75
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    75
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    75
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    75
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    74
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    74
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    74
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    73
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    73
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    73
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    73
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    73
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    73
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    73
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    73
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    73
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    73
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    72
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    72
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    71
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    71
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    69
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    69
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    69
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    69
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    69
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    69
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    69
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    69
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    69
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    69
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    69
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    68
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    68
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    68
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    67
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    67
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    67
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    67
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    67
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    67
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    67
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    67
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    67
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    67
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    67
  • 70. Kyrgyzstan
    67
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    67
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    67
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    67
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    67
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    67
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    67
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    67
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    66
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    66
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    66
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    65
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    65
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    65
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    65
  • 85. Zambia
    65
  • 86. Kenya
    65
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    65
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    65
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    65
  • 90. Liechtenstein
    65
  • 91. Lithuania
    65
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    65
  • 93. Belarus
    65
  • 94. Switzerland
    65
  • 95. Colombia
    65
  • 96. Estonia
    65
  • 97. Guatemala
    65
  • 98. Indonesia
    65
  • 99. Ireland
    65
  • 100. Latvia
    65
  • 101. Morocco
    65
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    65
  • 103. Cambodia
    65
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    65
  • 105. Bahrain
    64
  • 106. Croatia
    64
  • 107. Panama
    64
  • 108. Zimbabwe
    64
  • 109. Ecuador
    63
  • 110. Czech Republic
    63
  • 111. Benin
    63
  • 112. Bangladesh
    63
  • 113. Bolivia
    63
  • 114. Democratic Republic of the Congo
    63
  • 115. Egypt
    63
  • 116. Ethiopia
    63
  • 117. Finland
    63
  • 118. Gabon
    63
  • 119. Iraq
    63
  • 120. Laos
    63
  • 121. Mauritius
    63
  • 122. Nigeria
    63
  • 123. Rwanda
    63
  • 124. Serbia
    63
  • 125. Tanzania
    63
  • 126. Samoa
    63
  • 127. Reunion
    63
  • 128. Moldova
    62
  • 129. Yemen
    62
  • 130. Qatar
    62
  • 131. Mauritania
    62
  • 132. Chile
    62
  • 133. Mozambique
    62
  • 134. Armenia
    62
  • 135. Trinidad and Tobago
    62
  • 136. Costa Rica
    62
  • 137. Botswana
    60
  • 138. Ivory Coast
    60
  • 139. Macao
    60
  • 140. Oman
    59
  • 141. Palestinian Territory
    55
  • 142. Anguilla
    55
  • 143. Uruguay
    54
  • 144. Uganda
    49
  • 145. Bhutan
    31

2N7002K,215 Popularity by Region

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FAQ:

what is 2n7002?

The 2N7002 is a low voltage, low current Logic Level N-channel MOSFET. Because of its low on-state resistance and low input capacitance it is used in power management applications. The MOSFET can be easily controlled by 3.3V or 5V system voltage since it has low threshold voltage.

What is an N channel Mosfet?

A N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. ... An enhancement-type MOSFET is the opposite. It is normally off when the gate-source voltage is 0 (VGS=0).

How does AP Channel Connect to Mosfet?

To turn on a P-Channel Enhancement-type MOSFET, apply a positive voltage VS to the source of the MOSFET and apply a negative voltage to the gate terminal of the MOSFET (the gate must be sufficiently more negative than the threshold voltage across the drain-source region (VG DS).

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  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Manufacturer: NXP USA Inc.
Series: TrenchMOS™
Packaging: Cut Tape (CT)
Packaging: Tape & Reel (TR)
Packaging: Digi-Reel®
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Drive Voltage (Max Rds On Min Rds On): 4.5V 10V
Rds On (Max) @ Id Vgs: 3.9Ohm @ 500mA 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
FET Feature: -
Power Dissipation (Max): 830mW (Ta)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-236AB (SOT23)
Package / Case: TO-236-3 SC-59 SOT-23-3
Base Part Number: 2N70

There is no relevant information available for this part yet.

FEATURES

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Features

■ Logic level compatible
■ Subminiature surface mount package
■ Very fast switching
■ Gate-source ESD protection diodes.

Applications

■ Relay driver
■ High speed line driver.

Quick reference data

■ VDS ≤ 60 V
■ Ptot ≤ 0.83 W
■ ID ≤ 340 mA
■ RDSon ≤ 3.9 Ω.

There is no relevant information available for this part yet.