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Home  Transistors - FETs, MOSFETs - Single  2N7002BKT,115 Datasheets | Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 290MA SOT416

Oct 8 2020

2N7002BKT,115 Datasheets | Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 290MA SOT416

Product Overview

Image:
2N7002BKT-115
Manufacturer Part#: 2N7002BKT,115
Product Category: Transistors - FETs, MOSFETs - Single
Stock: No
Manufacturer: NXP USA Inc.
Description: MOSFET N-CH 60V 290MA SOT416
Datasheet: 2N7002BKT Datasheet
Package: SC-75
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order
Send RFQ: Inquiry

2N7002BKT,115 Images are for reference only.

2N7002BKT,115

CAD Models

Product Attributes

Manufacturer: NXP USA Inc.
Series: -
Packaging: Cut Tape (CT)
Packaging: Tape & Reel (TR)
Packaging: Digi-Reel®
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 290mA (Ta)
Drive Voltage (Max Rds On Min Rds On): 5V 10V
Rds On (Max) @ Id Vgs: 1.6Ohm @ 500mA 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
FET Feature: -
Power Dissipation (Max): 260mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75
Package / Case: SC-75 SOT-416
Base Part Number: 2N70

Descriptions

There is no relevant information available for this part yet.

FEATURES

General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

„ Logic-level compatible
„ Very fast switching
„ Trench MOSFETtechnology
„ ESD protection up to 2 kV
„ AEC-Q101 qualified

Applications

„ Relay driver
„ High-speed line driver
„ Low-side loadswitch
„ Switching circuits

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Documents & Media

Datasheets: 2N7002BKT Datasheet
Environmental Information: NXP RoHS3 Cert
PCN Obsolescence/ EOL: Advance Notice SOT416 Devices 02/Sep/2014
PCN Packaging: Multiple Devices 29/Dec/2014

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
2N7002BKT-115 2N7002BKT,115 NXP USA Inc. MOSFET N-CH 60V 290MA SOT416   On Order

N/A

2N7002BKT-115 2N7002BKT,115 NXP Semiconductors 2N7002BKT - 60 V, 290 mA N-channel Trench MOSFET SC-75 3-Pin   On Order

N/A

Popularity by Region

  • 1. United States
    100
  • 2. Dominica
    100
  • 3. India
    96
  • 4. Suriname
    94
  • 5. Poland
    94
  • 6. Malaysia
    92
  • 7. Norway
    92
  • 8. Canada
    92
  • 9. China
    92
  • 10. Russia
    91
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    90
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    88
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    87
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    87
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    87
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    87
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    87
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    87
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    86
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    85
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    85
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    85
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    84
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    84
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    83
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    83
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    83
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    83
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    82
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    82
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    82
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    82
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    82
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    82
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    82
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    82
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    82
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    82
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    82
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    82
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    82
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    82
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    82
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    82
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    82
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    82
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    82
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    81
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    81
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    81
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    81
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    80
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    80
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    80
  • 60. Argentina
    79
  • 61. South Africa
    79
  • 62. Colombia
    79
  • 63. Croatia
    79
  • 64. United Arab Emirates
    78
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    78
  • 66. Portugal
    78
  • 67. Peru
    78
  • 68. Slovakia
    78
  • 69. Greece
    78
  • 70. Egypt
    77
  • 71. Cameroon
    77
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    77
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    77
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    77
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    76
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    76
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    76
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    76
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    76
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    76
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    76
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    75
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    74
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    74
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    74
  • 86. Saudi Arabia
    74
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    74
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    74
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    73
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    72
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    71
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    71
  • 93. Palestinian Territory
    69
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    69
  • 95. Uruguay
    68
  • 96. Nepal
    65
  • 97. Bosnia and Herzegovina
    65
  • 98. Ethiopia
    64
  • 99. Dominican Republic
    62
  • 100. Uganda
    62
  • 101. Panama
    61
  • 102. Bhutan
    39
  • 103. Sri Lanka
    39

2N7002BKT,115 Popularity by Region

You May Also Be Interested In

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2N7008-G Microchip Technology TO-92-3 2233 PCS MOSFET N-CH 60V 0.23A TO92-3
2N7002K-7 Diodes Incorporated SOT-23-3 3123000 PCS MOSFET N-CH 60V 0.38A SOT23-3
2N7002W-7-F Diodes Incorporated SOT-323 On Order MOSFET N-CH 60V 115MA SOT323
2N7002-7-F Diodes Incorporated SOT-23-3 4434000 PCS MOSFET N-CH 60V 115MA SOT23-3
2N7002LT3G ON Semiconductor SOT-23-3 (TO-236) 140000 PCS MOSFET N-CH 60V 0.115A SOT-23
2N7000-G Microchip Technology TO-92-3 2006 PCS MOSFET N-CH 60V 0.2A TO92-3
2N7002E Panasonic Electronic Components TO-236-3, SC-59, SOT-23-3 On Order N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)
2N7002PT,115 NXP USA Inc. SC-75 On Order MOSFET N-CH 60V 0.31A SOT-416
2N7002-G Microchip Technology SOT-23 (TO-236AB) 1541 PCS MOSFET N-CH 60V 0.115A SOT23-3
2N7002BKM,315 Nexperia USA Inc. DFN1006-3 On Order MOSFET N-CH 60V 450MA SOT883

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FAQ:

what is 2n7002?

The 2N7002 is a low voltage, low current Logic Level N-channel MOSFET. Because of its low on-state resistance and low input capacitance it is used in power management applications. The MOSFET can be easily controlled by 3.3V or 5V system voltage since it has low threshold voltage.

What is an N channel Mosfet?

A N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. ... An enhancement-type MOSFET is the opposite. It is normally off when the gate-source voltage is 0 (VGS=0).

How does AP Channel Connect to Mosfet?

To turn on a P-Channel Enhancement-type MOSFET, apply a positive voltage VS to the source of the MOSFET and apply a negative voltage to the gate terminal of the MOSFET (the gate must be sufficiently more negative than the threshold voltage across the drain-source region (VG DS).

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  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Manufacturer: NXP USA Inc.
Series: -
Packaging: Cut Tape (CT)
Packaging: Tape & Reel (TR)
Packaging: Digi-Reel®
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 290mA (Ta)
Drive Voltage (Max Rds On Min Rds On): 5V 10V
Rds On (Max) @ Id Vgs: 1.6Ohm @ 500mA 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
FET Feature: -
Power Dissipation (Max): 260mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75
Package / Case: SC-75 SOT-416
Base Part Number: 2N70

There is no relevant information available for this part yet.

FEATURES

General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

„ Logic-level compatible
„ Very fast switching
„ Trench MOSFETtechnology
„ ESD protection up to 2 kV
„ AEC-Q101 qualified

Applications

„ Relay driver
„ High-speed line driver
„ Low-side loadswitch
„ Switching circuits

There is no relevant information available for this part yet.