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Home  Transistors - Bipolar (BJT) - Single  2N5686 Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor NPN 80V 50A 2MHz 300W Through Hole TO-3

Jan 5 2021

2N5686 Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor NPN 80V 50A 2MHz 300W Through Hole TO-3

Product Overview

Image:
2N5686
Manufacturer Part#: 2N5686
Product Category: Transistors - Bipolar (BJT) - Single
Stock: No
Manufacturer: NTE Electronics, Inc
Description: Bipolar (BJT) Transistor NPN 80V 50A 2MHz 300W Through Hole TO-3
Datasheet: 2N5686 Datasheet
Package: TO-204AE
Minimum: 1
Lead Time: 1 Weeks
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
5: 10.56000 52.80000

2N5686 Images are for reference only.

2N5686

CAD Models

Product Attributes

Package / Case: TO-204AE
Supplier Device Package: TO-3
Power - Max: 300W
Transistor Type: NPN
Vce Saturation (Max) @ Ib Ic: 1V @ 2.5A 25A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic Vce: 15 @ 25A 2V
Frequency - Transition: 2MHz
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 80V

Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:2N5686 Compare: Current Part Manufacturers:ON Semiconductor Category:BJTs Description: Trans GP BJT NPN 80V 50A 3Pin (2+Tab) TO-204 Tray
Mfr.Part#:2N5686G Compare: 2N5686 VS 2N5686G Manufacturers:ON Semiconductor Category:BJTs Description: TO-204 NPN 80V 50A
Mfr.Part#:JANTX2N5686 Compare: 2N5686 VS JANTX2N5686 Manufacturers:Microsemi Category:BJTs Description: TO-3 NPN 80V 50A
Mfr.Part#:JANTXV2N5686 Compare: 2N5686 VS JANTXV2N5686 Manufacturers:Microsemi Category:BJTs Description: TO-3 NPN 80V 50A

Descriptions

There is no relevant information available for this part yet.

FEATURES

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS

. . . designed for use in high–power amplifier and switching circuit applications.

• Continuous Collector Current – IC = 50 A

• Power Dissipation – PD = 300 W @ TC = 25 °C
• DC Current Gain – hFE = 15–60 @ IC = 25 A

ECCN / UNSPSC

Description Value
USHTS: 8541290095
CNHTS: 8541290000
MXHTS: 85412999
TARIC: 8541290000
ECCN: EAR99

Environmental & Export Classifications

Description Value
RoHS Status: RoHS non-compliant
ECCN: EAR99
HTSUS: 8541.29.0095

Documents & Media

Datasheets: 2N5686 Datasheet

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
2N5686 2N5686 NTE Electronics, Inc Bipolar (BJT) Transistor NPN 80V 50A 2MHz 300W Through Hole TO-3 On Order

5:$$10.56000

2N5686 2N5686 Microsemi Bipolar Transistors - BJT Power BJT On Order

100:$59.46

2N5686 2N5686 Microsemi Corporation Power Bipolar Transistor, 50A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, TO-3, 2 PIN On Order

N/A

Popularity by Region

  • 1. Australia
    100
  • 2. Brazil
    99
  • 3. Israel
    99
  • 4. China
    98
  • 5. Peru
    97
  • 6. Mexico
    95
  • 7. Romania
    95
  • 8. South Korea
    92
  • 9. Russia
    92
  • 10. Canada
    91
  • 11. United States
    85
  • 12. Germany
    83
  • 13. Taiwan
    79
  • 14. Spain
    77
  • 15. Turkey
    77
  • 16. France
    76
  • 17. India
    75
  • 18. Czech Republic
    52

2N5686 Popularity by Region

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2N5686
Bipolar (BJT) Transistor NPN 80V 50A 2MHz 300W Through Hole TO-3
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Package / Case: TO-204AE
Supplier Device Package: TO-3
Power - Max: 300W
Transistor Type: NPN
Vce Saturation (Max) @ Ib Ic: 1V @ 2.5A 25A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic Vce: 15 @ 25A 2V
Frequency - Transition: 2MHz
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 80V

There is no relevant information available for this part yet.

FEATURES

HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS

. . . designed for use in high–power amplifier and switching circuit applications.

• Continuous Collector Current – IC = 50 A

• Power Dissipation – PD = 300 W @ TC = 25 °C
• DC Current Gain – hFE = 15–60 @ IC = 25 A

There is no relevant information available for this part yet.