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JANTXV2N3501 Datasheets | Bipolar (BJT) - Single TRANS NPN 150V 0.3A

By apogeeweb, JANTXV2N3501, JANTXV2N3501 Datasheet,JANTXV2N3501 PDF,Microsemi Corporation

Product Overview

Image:
JANTXV2N3501
Manufacturer Part#: JANTXV2N3501
Product Category: Bipolar (BJT) - Single
Stock: On Order
Manufacturer: Microsemi Corporation (Microchip )
Description: TRANS NPN 150V 0.3A
Datasheet: 2N3498 - 2N3501
Package: IC
Minimum: 1
Quantity: On Order

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Product Attributes

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Manufacturer: Microsemi Corporation
Series: Military MIL-PRF-19500/366
Packaging: Bulk
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib Ic: 400mV @ 15mA 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic Vce: 100 @ 150mA 10V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case:
3-PowerUDFN
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Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:JANTXV2N3501 Compare: Current Part Manufacturers:Microsemi Category:BJTs Description: To-39 npn 150v 0.3a
Mfr.Part#:JANTX2N3501 Compare: JANTXV2N3501 VS JANTX2N3501 Manufacturers:Microsemi Category:BJTs Description: Jantx series 150v 300ma through hole npn silicon transistor - to-39
Mfr.Part#:JANTX2N3501L Compare: JANTXV2N3501 VS JANTX2N3501L Manufacturers:Microsemi Category:BJTs Description: Trans gp bjt npn 150v 0.3a 3pin to-5
Mfr.Part#:JAN2N3501 Compare: JANTXV2N3501 VS JAN2N3501 Manufacturers:Microsemi Category:BJTs Description: Trans gp bjt npn 150v 0.3a 3pin to-39

Descriptions

Trans GP BJT NPN 150V 0.3A 1000mW 3-Pin TO-39 Bag:Verical

  • Features
  • Product Manufacturer

FEATURES

Implement this NPN JANTXV2N3501 GP BJT from Microsemi to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 6 V.

Microsemi (Microchip Technology) - Microsemi Corporation was acquired by Microchip in May 2018. Microsemi offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal IC’s, FPGAs, SoCs, ASICs, power management products, timing, voice processing devices, discrete components, enterprise storage, and Power-over-Ethernet solutions.

  • ECCN/UNSPSC
  • Environmental & Export Classifications
  • Documents & Media
Description Value
USHTS: 8541210095
CNHTS: 8541210000
MXHTS: 85412101
TARIC: 8541210000
ECCN: EAR99
Description Value
RoHS Status: RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Documents Media
Datasheets: 2N3498 - 2N3501
HTML Datasheet: 2N3498 - 2N3501

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