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JANTX2N4150S Datasheets | Bipolar (BJT) - Single TRANS NPN 70V 10A TO-39

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Product Overview

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JANTX2N4150S
Manufacturer Part#: JANTX2N4150S
Product Category: Bipolar (BJT) - Single
Stock: On Order
Manufacturer: Microsemi Corporation (Microchip )
Description: TRANS NPN 70V 10A TO-39
Datasheet: 2N4150(S),2N5237(S),2N5238(S)
Package: IC
Minimum: 1
Quantity: On Order

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Product Attributes

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Manufacturer: Microsemi Corporation
Series: Military MIL-PRF-19500/394
Packaging: Bulk
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib Ic: 2.5V @ 1A 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic Vce: 40 @ 5A 5V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case:
3-PowerUDFN
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Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:JANTX2N4150S Compare: Current Part Manufacturers:Microsemi Category:BJTs Description: Trans gp bjt npn 70v 10a 3pin to-39
Mfr.Part#:JANTX2N4150S Compare: JANTX2N4150S VS JANTX2N4150S Manufacturers:Semicoa semiconductor Category: Description: Small signal bipolar transistor, 10a i(c), 70v v(br)ceo, 1-element, npn, silicon, to-39, hermeN/Ac sealed, metal can-3
Mfr.Part#:JANS2N4150S Compare: JANTX2N4150S VS JANS2N4150S Manufacturers:Microsemi Category:BJTs Description: Bipolar transistors - bjt npn transistor
Mfr.Part#:2N4150S Compare: JANTX2N4150S VS 2N4150S Manufacturers:Microsemi Category:BJTs Description: Bipolar transistors - bjt npn transistor

Descriptions

Trans GP BJT NPN 70V 10A 1000mW 3-Pin TO-39 Bag:Verical
JANTX2N4150S --:Florida Circuit

  • Features
  • Product Manufacturer

FEATURES

Design various electronic circuits with this versatile NPN JANTX2N4150S GP BJT from Microsemi. This bipolar junction transistor's maximum emitter base voltage is 10 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 70 V and a maximum emitter base voltage of 10 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.

Microsemi (Microchip Technology) - Microsemi Corporation was acquired by Microchip in May 2018. Microsemi offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal IC’s, FPGAs, SoCs, ASICs, power management products, timing, voice processing devices, discrete components, enterprise storage, and Power-over-Ethernet solutions.

  • ECCN/UNSPSC
  • Environmental & Export Classifications
  • Documents & Media
Description Value
USHTS: 8541210095
CNHTS: 8541210000
MXHTS: 85412101
TARIC: 8541210000
ECCN: EAR99
Description Value
RoHS Status: RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Documents Media
Datasheets: 2N4150(S),2N5237(S),2N5238(S)

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