MT47H64M8SH-25E:H Datasheets | DRAMs DDR DRAM， 64MX8， 0.4ns， CMOS， PBGA60， FBGA-60 -Apogeeweb

DRAMs

MT47H64M8SH-25E:H Datasheets | DRAMs DDR DRAM， 64MX8， 0.4ns， CMOS， PBGA60， FBGA-60

By apogeeweb, MT47H64M8SH-25E:H, MT47H64M8SH-25E:H Datasheet,MT47H64M8SH-25E:H PDF,Micron Technology Inc

Product Overview

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Manufacturer Part#:	MT47H64M8SH-25E:H
Product Category:	DRAMs
Stock:	On Order
Manufacturer:	MICRON
Description:	DDR DRAM， 64MX8， 0.4ns， CMOS， PBGA60， FBGA-60
Datasheet:	N/A
Package:	TFBGA, BGA60,9X11,32
Minimum:	1
Quantity:	On Order

MT47H64M8SH-25E:H Images are for reference only.

MT47H64M8SH-25E:H

CAD Models

Product Attributes

Product Attributes	Attrinute Value	Search Similar
Manufacturer Part Number:	MT47H64M8SH-25E
Part Life Cycle Code:	Active
Ihs Manufacturer:	MICRON TECHNOLOGY INC
Package Description:	TFBGA, BGA60,9X11,32
Reach Compliance Code:	compliant
Manufacturer:	Micron Technology Inc
Risk Rank:	2.14
Access Mode:	FOUR BANK PAGE BURST
Access Time-Max:	0.4 ns
Additional Feature:	AUTO/SELF REFRESH
I/O Type:	COMMON
JESD-30 Code:	R-PBGA-B60
JESD-609 Code:	e1
Length:	10 mm
Memory Density:	536870912 bit
Memory IC Type:	DDR DRAM
Memory Width:	8
Number of Functions:	1
Number of Words:	67108864 words
Number of Words Code:	64000000
Operating Mode:	SYNCHRONOUS
Operating Temperature-Max:	85 °C
Organization:	64MX8
Output Characteristics:	3-STATE
Package Body Material:	PLASTIC/EPOXY
Package Code:	TFBGA
Package Equivalence Code:	BGA60,9X11,32
Package Shape:	RECTANGULAR
Package Style:	GRID ARRAY, THIN PROFILE, FINE PITCH
Power Supplies:	1.8 V
Qualification Status:	Not Qualified
Refresh Cycles:	8192
Seated Height-Max:	1.2 mm
Self Refresh:	YES
Standby Current-Max:	0.01 A
Subcategory:	DRAMs
Supply Current-Max:	0.15 mA
Supply Voltage-Max (Vsup):	1.9 V
Supply Voltage-Min (Vsup):	1.7 V
Technology:	CMOS
Temperature Grade:	OTHER
Terminal Finish:	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form:	BALL
Terminal Pitch:	0.8 mm
Terminal Position:	BOTTOM
Width:	8 mm
Clock Frequency-Max (fCLK):	400 MHz
Interleaved Burst Length:	4,8
ECCN Code:	EAR99
HTS Code:	8542.32.00.28
Part Package Code:	BGA
Pin Count:	60
Peak Reflow Temperature (Cel):	260
Time@Peak Reflow Temperature-Max (s):	30
Pbfree Code:	Yes
Factory Lead Time:	16 Weeks
Show Similar

Alternative Models

Part	Compare	Manufacturers	Category	Description
Mfr.Part#:MT47H64M8SH-25E:H	Compare: Current Part	Manufacturers:Micron	Category:RAM Memory	Description: Ddr dram, 64mx8, 0.4ns, cmos, pbga60, 8 x 10mm, rohs compliant, fbga-60
Mfr.Part#:MT47H64M8CF-25E:G	Compare: MT47H64M8SH-25E:H VS MT47H64M8CF-25E:G	Manufacturers:Micron	Category:Memory Chip	Description: Dram chip ddr2 sdram 512mbit 64mx8 1.8v 60pin fbga
Mfr.Part#:MT47H64M8JN-25E:G	Compare: MT47H64M8SH-25E:H VS MT47H64M8JN-25E:G	Manufacturers:Micron	Category:RAM Memory	Description: Dram chip ddr2 sdram 512mbit 64mx8 1.8v 60pin fbga
Mfr.Part#:MT47H64M8CF-25E:G TR	Compare: MT47H64M8SH-25E:H VS MT47H64M8CF-25E:G TR	Manufacturers:Micron	Category:RAM Memory	Description: Dram chip ddr2 sdram 512mbit 64mx8 1.8v 60pin fbga t/r

ECCN/UNSPSC

Description	Value
USHTS:	8542320028
CNHTS:	8542320000
MXHTS:	85423201
ECCN:	3A991

Description	Value

Documents	Media

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In Stock:On Order

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