FEATURES
[Numonyx]
Description
The M29W800D is a 8-Mbit (1 Mbit x 8 or 512 Kbits x 16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its read mode where it can be read in the same way as a ROM or EPROM.
Features
■ Supply voltage
– VCC = 2.7 V to 3.6 V for program, erase and read
■ Access times: 45, 70, 90 ns
■ Programming time
– 10 μs per byte/word typical
■ 19 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 16 main blocks
■ Program/erase controller
– Embedded byte/word program algorithms
■ Erase suspend and resume modes
– Read and program another block during erase suspend
■ Unlock bypass program command
– Faster production/batch programming
■ Temporary block unprotection mode
■ Common flash interface
– 64-bit security code
■ Low power consumption
– Standby and automatic standby
■ 100,000 program/erase cycles per block
■ Electronic signature
– Manufacturer code: 0020h
– Top device code M29W800DT: 22D7h
– Bottom device code M29W800DB: 225Bh
Micron is one of the world's leading providers of advanced semiconductor solutions. Micron's DRAM and Flash components are used in today's most advanced computing, networking, and communications products, including computers, workstations, servers, cell phones, wireless devices, digital cameras, and gaming systems.