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Oct 21 2020

SST39VF512-70-4I-WHE-T Datasheets | Memory IC FLASH 512K PARALLEL 32TSOP

Product Overview

Image:
SST39VF512-70-4I-WHE-T
Manufacturer Part#: SST39VF512-70-4I-WHE-T
Product Category: Memory
Stock: No
Manufacturer: Microchip Technology
Description: IC FLASH 512K PARALLEL 32TSOP
Datasheet: SST39(L,V)F010/020/040
Package: 32-TFSOP (0.488", 12.40mm Width)
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order
Send RFQ: Inquiry

SST39VF512-70-4I-WHE-T Images are for reference only.

SST39VF512-70-4I-WHE-T

CAD Models

Product Attributes

Manufacturer: Microchip Technology
Series: SST39 MPF™
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Write Cycle Time - Word Page: 20µs
Access Time: 70ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488" 12.40mm Width)
Supplier Device Package: 32-TSOP
Base Part Number: SST39VF512

Descriptions

2.7V to 3.6V 512Mbit Multi-Purpose Flash:Microchip
IC FLASH 512KBIT 70NS 32TSOP:Digi-Key

FEATURES

PRODUCT DESCRIPTION

The SST39LF512, SST39LF010,SST39LF020, SST39LF040 and SST39VF512, SST39VF010,SST39VF020, SST39VF040 are 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF512/010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF512/010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories.

FEATURES:

• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
• Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF512/010/020/040
– 2.7-3.6V for SST39VF512/010/020/040
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption(typical values at 14 MHz)
– Active Current: 5 mA (typical)
– Standby Current: 1 µA (typical)
• Sector-Erase Capability
– Uniform 4 KByte sectors
• Fast Read Access Time:
– 45 ns for SST39LF512/010/020/040
– 55 ns for SST39LF020/040
– 70 ns for SST39VF512/010/020/040
• Latched Address and Data
• Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
1 second (typical) for SST39LF/VF512
2 seconds (typical) for SST39LF/VF010
4 seconds (typical) for SST39LF/VF020
8 seconds (typical) for SST39LF/VF040
• Automatic Write Timing
– Internal VPPGeneration
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 48-ball TFBGA (6mm x 8mm)
– 34-ball WFBGA (4mm x 6mm) for 1M and 2M
• All devices are RoHS compliant

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 3 (168 Hours)

Documents & Media

Datasheets: SST39(L,V)F010/020/040
Design Resources: 39 Series Brief
PCN Obsolescence/ EOL: Product Selection Guide
PCN Design/Specification: SST39VF512 Development Tool Selector
PCN Packaging: SST39(V,L)F512 28/Apr/2011
HTML Datasheet: SST39(L,V)F010,020,040 Datasheet 09/Jul/2013

Product Manufacturer

Microchip Technology Inc. is a leading provider of microcontroller and analog semiconductors, providing low-risk product development, lower total system cost and faster time to market for thousands of diverse customer applications worldwide. Headquartered in Chandler, Arizona, Microchip offers outstanding technical support along with dependable delivery and quality.

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
SST39VF512-70-4I-WHE-T SST39VF512-70-4I-WHE-T Microchip Technology IC FLASH 512K PARALLEL 32TSOP On Order

N/A

SST39VF512-70-4I-WHE-T SST39VF512-70-4I-WHE-T Microchip 2.7V to 3.6V 512Mbit Multi-Purpose Flash:Microchip
IC FLASH 512KBIT 70NS 32TSOP:Digi-Key
On Order

N/A

SST39VF512-70-4I-WHE-T SST39VF512-70-4I-WHE-T Microchip Technology Inc SST39VF512-70-4I-WHE-T On Order

N/A

Popularity by Region

  • 1. China
    100
  • 2. United States
    82
  • 3. Hong Kong
    62

SST39VF512-70-4I-WHE-T Popularity by Region

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  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Manufacturer: Microchip Technology
Series: SST39 MPF™
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Write Cycle Time - Word Page: 20µs
Access Time: 70ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488" 12.40mm Width)
Supplier Device Package: 32-TSOP
Base Part Number: SST39VF512

2.7V to 3.6V 512Mbit Multi-Purpose Flash:Microchip
IC FLASH 512KBIT 70NS 32TSOP:Digi-Key

FEATURES

PRODUCT DESCRIPTION

The SST39LF512, SST39LF010,SST39LF020, SST39LF040 and SST39VF512, SST39VF010,SST39VF020, SST39VF040 are 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF512/010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF512/010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories.

FEATURES:

• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
• Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF512/010/020/040
– 2.7-3.6V for SST39VF512/010/020/040
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption(typical values at 14 MHz)
– Active Current: 5 mA (typical)
– Standby Current: 1 µA (typical)
• Sector-Erase Capability
– Uniform 4 KByte sectors
• Fast Read Access Time:
– 45 ns for SST39LF512/010/020/040
– 55 ns for SST39LF020/040
– 70 ns for SST39VF512/010/020/040
• Latched Address and Data
• Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
1 second (typical) for SST39LF/VF512
2 seconds (typical) for SST39LF/VF010
4 seconds (typical) for SST39LF/VF020
8 seconds (typical) for SST39LF/VF040
• Automatic Write Timing
– Internal VPPGeneration
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 48-ball TFBGA (6mm x 8mm)
– 34-ball WFBGA (4mm x 6mm) for 1M and 2M
• All devices are RoHS compliant

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