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Jun 3 2020

MT47H128M8CF-25EIT:H Datasheets| MICRON| PDF| Price| In Stock

Product Overview

Kynix Part #:

KY32-MT47H128M8CF-25EIT:H

Manufacturer Part#:

MT47H128M8CF-25EIT:H

Product Category:

Memory

Stock:

Yes

Manufacturer:

MICRON

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Description:

-

Datasheet:

MT47H128M8CF-25EIT:H Datasheet

Package:

BGA

Quantity:

2187 PCS


MT47H128M8CF-25EIT:H Images are for reference only.

 MT47H128M8CF-25EIT:H Image


CAD Models

There is no relevant information available for this part yet.


Product Attributes

Categories

Integrated Circuits (ICs)

Memory ICs

EU RoHS Compliant

Yes

REACH Compliant

Yes

Status

Obsolete

Package Description

8 X 10 MM, ROHS COMPLIANT, FBGA-60

Brand

MICRON

Sub Category

DRAMs

Access Mode

MULTI BANK PAGE BURST

Address Bus Width

17 b

Access Time-Max

0.4 ns

Base Part Number

MT47H128M8

Clock Frequency-Max (fCLK)

400 MHz

Data Bus Width

8 b

Density

512 M

I/O Type

COMMON

Interface Type

Parallel

Interleaved Burst Length

4,8

JESD-30 Code

R-PBGA-B60

JESD-609 Code

e1

Memory Density

1073741824 bit

Memory IC Type

DDR DRAM

Memory Width

8

Memory Type

Volatile

Maximum Operating Current

125 mA

Number of Terminals

60

Number of Words

134217728 words

Number of Words Code

128000000

Number of Functions

1

Number of Ports

1

Number of Internal Banks

4

Number of Bits per Word

8 b

Number of I/O Lines

8 b

Organization

128MX8

Operating Mode

SYNCHRONOUS

Operating Temperature

-40°C~85°C

Output Characteristics

3-STATE

Package Body Material

PLASTIC/EPOXY

Package Code

TFBGA

Package Equivalence Code

BGA60,9X11,32

Package Shape

RECTANGULAR

Package Style

GRID ARRAY, THIN PROFILE, FINE PITCH

Pbfree Code

Yes

Peak Reflow Temperature (Cel)

260

Power Supplies

1.8 V

Pin Count

60

Product Dimensions

10 x 8 x 0.8 mm

Package / Case

60-TFBGA

Supplier Device Package

60-FBGA (8x10)

Qualification Status

Not Qualified

Risk Rank

5.25

Refresh Cycles

8192

Radiation Hardening

No

Rohs Code

Yes

Sequential Burst Length

4,8

Supply Current-Max

0.21 mA

Supply Voltage-Nom (Vsup)

1.8 V

Supply Voltage-Min (Vsup)

1.7 V

Supply Voltage-Max (Vsup)

1.9 V

Seated Height-Max

1.2 mm

Screening Level

Industrial

Surface Mount

Yes

Technology

SDRAM - DDR2

Temperature Grade

INDUSTRIAL

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form

BALL

Terminal Pitch

0.8 mm

Terminal Position

BOTTOM

Time@Peak Reflow Temperature-Max (s)

30

Type

DDR2 SDRAM

Length

10 mm

Width

8 mm

Write Cycle Time - Word, Page

15 ns

Additional Feature

AUTO/SELF REFRESH


Features

  • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
  • JEDEC-standard 1.8V I/O (SSTL_18-compatible)
  • Differential data strobe (DQS, DQS#) option
  • 4n-bit prefetch architecture
  • Duplicate output strobe (RDQS) option for x8
  • DLL to align DQ and DQS transitions with CK
  • 8 internal banks for concurrent operation
  • Programmable CAS latency (CL)
  • Posted CAS additive latency (AL)
  • WRITE latency = READ latency - 1 tCK
  • Selectable burst lengths (BL): 4 or 8
  • Adjustable data-output drive strength
  • 64ms, 8192-cycle refresh
  • On-die termination (ODT)
  • Industrial temperature (IT) option
  • Automotive temperature (AT) option
  • RoHS-compliant
  • Supports JEDEC clock jitter specification

Advantages and Disadvantages

There is no relevant information available for this part yet.


Applications

There is no relevant information available for this part yet.


Product Functions

There is no relevant information available for this part yet.


ECCN / UNSPSC

Description

Value

ECCN

EAR99

HTSN

8542320032

SCHEDULE B

8542320015


Environmental & Export Classifications

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant


Documents & Media

There is no relevant information available for this part yet.


Product Manufacturer

Micron Technology, Inc. is an American producer of computer memory and computer data storage including dynamic random-access memory, flash memory, and USB flash drives. It is headquartered in Boise, Idaho. Its consumer products are marketed under the brands Crucial and Ballistix. Micron and Intel together created IM Flash Technologies, which produces NAND flash memory.


Product Range

Memory

Storage

Advanced Solutions

DRAM

DRAM Modules

Graphics Memory

Managed NAND

Multichip Packages

NAND Flash

NOR Flash

Memory Cards

Solid State Drives

3D XPoint Technology

Advanced Computing Solutions

Authenta Security Solution

Heterogeneous-Memory Storage Engine


Distributors

Distributor

Stock

Manufacturer

Descriptions

Kynix

2187 PCS

Micron Technology

-

Avnet

7148 PCS

Micron Technology

DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA

Arrow

Non-stock

Micron Technology

DRAM Chip DDR2 SDRAM 1G-Bit 128Mx8 1.8V 60-Pin FBGA Tray

Digi-Key

1000 PCS

Micron Technology

IC DRAM 1G PARALLEL 60FBGA


Alternative Models

There is no relevant information available for this part yet.


Popularity by Region

MT47H128M8CF-25EIT:H Popularity by Region 

MT47H128M8CF-25EIT:H Popularity by Region


Market Price Analysis

There is no relevant information available for this part yet.


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