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Jun 24 2020

MT46V16M16P-5B:M Datasheets| MICRON| PDF| Price| In Stock

Product Overview

Kynix Part #:

KY32-MT46V16M16P-5B:M

Manufacturer Part#:

MT46V16M16P-5B:M

Product Category:

Memory

Stock:

Yes

Manufacturer:

MICRON

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Description:

-

Datasheet:

MT46V16M16P-5B:M Datasheet

Package:

TSOP66

Quantity:

3200 PCS


MT46V16M16P-5B:M Images are for reference only.

 MT46V16M16P-5B:M Image


CAD Models

There is no relevant information available for this part yet.


Product Attributes

Categories

Integrated Circuits (ICs)

Memory ICs

EU RoHS Compliant

Yes

REACH Compliant

Yes

China RoHS Compliant

Yes

Status

Active

Package Description

0.400 INCH, LEAD FREE, PLASTIC, TSOP-66

Brand

MICRON

Sub Category

DRAMs

Access Mode

FOUR BANK PAGE BURST

Address Bus Width

15 b

Access Time-Max

0.7 ns

Clock Frequency-Max (fCLK)

200 MHz

Data Bus Width

16 b

Density

256 Mb

I/O Type

COMMON

Interface Type

Parallel

Interleaved Burst Length

2,4,8

JESD-30 Code

R-PDSO-G66

JESD-609 Code

e3

Memory Density

268435456 bit

Memory IC Type

DDR DRAM

Memory Width

16

Moisture Sensitive

Yes

Number of Terminals

66

Number of Words

16777216 words

Number of Words Code

16000000

Number of Functions

1

Number of Ports

1

Number of Banks

4

Number of Bits per Word

16 b

Number of I/O Lines

16 b

Organization

16MX16

Operating Mode

SYNCHRONOUS

Operating Temperature

0°C~70°C

Output Characteristics

3-STATE

Package Body Material

PLASTIC/EPOXY

Package Code

TSSOP

Package Equivalence Code

TSSOP66,.46

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packaging

Tray

Product Category

DRAM

Product Dimensions

22.22 x 10.16 x 1 mm

Peak Reflow Temperature (Cel)

260

Power Supplies

2.6 V

Pin Count

66

Qualification Status

Not Qualified

Risk Rank

5.26

Refresh Cycles

8192

Radiation Hardening

No

Rohs Code

Yes

Self Refresh

Yes

Screening Level

Commercial

Sequential Burst Length

2,4,8

Standby Current-Max

0.004 A

Supply Current-Max

0.175 mA

Supply Voltage-Nom (Vsup)

2.6 V

Supply Voltage-Min (Vsup)

2.5 V

Supply Voltage-Max (Vsup)

2.7 V

Seated Height-Max

1.2 mm

Surface Mount

Yes

Technology

CMOS

Temperature Grade

COMMERCIAL

Terminal Finish

Matte Tin (Sn)

Terminal Form

GULL WING

Terminal Pitch

0.65 mm

Terminal Position

DUAL

Type

DDR SDRAM

Time@Peak Reflow Temperature-Max (s)

30

Length

22.22 mm

Width

10.16 mm

Additional Feature

AUTO/SELF REFRESH


Features

VDD = 2.5V ±0.2V; VDDQ = 2.5V ±0.2V

VDD = 2.6V ±0.1V; VDDQ = 2.6V ±0.1V (DDR400)

Bidirectional data strobe (DQS) transmitted/ received with data, that is, source-synchronous data capture (x16 has two o one per byte)

Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle

Differential clock inputs (CK and CK#)

Commands entered on each positive CK edge

DQS edge-aligned with data for READs; center aligned with data for WRITEs

DLL to align DQ and DQS transitions with CK

Four internal banks for concurrent operation

Data mask (DM) for masking write data (x16 has two o one per byte)

Programmable burst lengths (BL): 2, 4, or 8

Auto refresh

     64ms, 8192-cycle

Longer-lead TSOP for improved reliability (OCPL)

2.5V I/O (SSTL_2-compatible)

Concurrent auto precharge option supported

tRAS lockout supported (tRAP = tRCD)


Advantages and Disadvantages

There is no relevant information available for this part yet.


Applications

There is no relevant information available for this part yet.


Product Functions

There is no relevant information available for this part yet.


ECCN / UNSPSC

Description

Value

ECCN

EAR99

HTSN

8542320002

SCHEDULE B

8542320023


Environmental & Export Classifications

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant


Documents & Media

There is no relevant information available for this part yet.


Product Manufacturer

Micron Technology, Inc. is an American producer of computer memory and computer data storage including dynamic random-access memory, flash memory, and USB flash drives. It is headquartered in Boise, Idaho. Its consumer products are marketed under the brands Crucial and Ballistix. Micron and Intel together created IM Flash Technologies, which produces NAND flash memory.


Product Range

Memory

Storage

Advanced Solutions

DRAM

DRAM Modules

Graphics Memory

Managed NAND

Multichip Packages

NAND Flash

NOR Flash

Memory Cards

Solid State Drives

3D XPoint Technology

Advanced Computing Solutions

Authenta Security Solution

Heterogeneous-Memory Storage Engine


Distributors

Distributor

Stock

Manufacturer

Descriptions

Kynix

3200 PCS

Micron Technology

-

Arrow

4974 PCS

Micron Technology

DRAM Chip DDR SDRAM 256Mbit 16Mx16 2.6V 66-Pin TSOP Tray

Avnet

Non-stock

Micron Technology

DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 66-Pin TSOP

Mouser

2145 PCS

Micron Technology

DRAM DDR 256M 16MX16 TSOP


Alternative Models

There is no relevant information available for this part yet.


Popularity by Region

MT46V16M16P-5B:M Popularity by Region 

MT46V16M16P-5B:M Popularity by Region


Market Price Analysis

MT46V16M16P-5B:M Market Price Analysis 

MT46V16M16P-5B:M Market Price Analysis


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