Home  Power Field-Effect Transistors  JANTX2N6782 Datasheets | Power Field-Effect Transistors Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

JANTX2N6782 Datasheets | Power Field-Effect Transistors Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

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Product Overview

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JANTX2N6782
Manufacturer Part#: JANTX2N6782
Product Category: Power Field-Effect Transistors
Stock: On Order
Manufacturer: International Rectifier Corp (Infineon)
Description: Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
Datasheet: N/A
Package: CYLINDRICAL, O-MBCY-W3
Minimum: 1
Quantity: On Order

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Product Attributes

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Manufacturer Part Number: JANTX2N6782
Pbfree Code: No
Part Life Cycle Code: Transferred
Ihs Manufacturer: INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
Package Description: CYLINDRICAL, O-MBCY-W3
Pin Count: 2
Reach Compliance Code: unknown
ECCN Code: EAR99
Manufacturer: International Rectifier
Risk Rank: 3.11
Additional Feature: AVALANCHE RATED
Avalanche Energy Rating (Eas): 68 mJ
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 100 V
Drain Current-Max (ID): 3.5 A
Drain-source On Resistance-Max: 0.69 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: O-MBCY-W3
Operating Mode: ENHANCEMENT MODE
Package Body Material: METAL
Package Shape: ROUND
Package Style: CYLINDRICAL
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 14 A
Qualification Status: Not Qualified
Surface Mount: NO
Terminal Form: WIRE
Terminal Position: BOTTOM
Transistor Application: SWITCHING
Transistor Element Material: SILICON
Number of Terminals: 3
Part Package Code: BCY
Number of Elements: 1
Reference Standard: MIL-19500/556
JEDEC-95 Code: TO-205AF
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