IRFF110 Datasheets | Power Field-Effect Transistors Power Field-Effect Transistor， 3.5A I(D)， 100V， 0.69ohm， 1-Element， N-Channel， Silicon， Metal-oxide Semiconductor FET， TO-205AF， HERMETIC SEALED， TO-39， 3 PIN -Apogeeweb

Power Field-Effect Transistors

IRFF110 Datasheets | Power Field-Effect Transistors Power Field-Effect Transistor， 3.5A I(D)， 100V， 0.69ohm， 1-Element， N-Channel， Silicon， Metal-oxide Semiconductor FET， TO-205AF， HERMETIC SEALED， TO-39， 3 PIN

IRFF110 Datasheets | Power Field-Effect Transistors Power Field-Effect Transistor， 3.5A I(D)， 100V， 0.69ohm， 1-Element， N-Channel， Silicon， Metal-oxide Semiconductor FET， TO-205AF， HERMETIC SEALED， TO-39， 3 PIN

By apogeeweb, IRFF110, IRFF110 Datasheet,IRFF110 PDF,International Rectifier

Product Overview

Image:
Manufacturer Part#:	IRFF110
Product Category:	Power Field-Effect Transistors
Stock:	On Order
Manufacturer:	International Rectifier Corp (Infineon)
Description:	Power Field-Effect Transistor， 3.5A I(D)， 100V， 0.69ohm， 1-Element， N-Channel， Silicon， Metal-oxide Semiconductor FET， TO-205AF， HERMETIC SEALED， TO-39， 3 PIN
Datasheet:	N/A
Package:	CYLINDRICAL, O-MBCY-W3
Minimum:	1
Quantity:	On Order

IRFF110 Images are for reference only.

IRFF110

CAD Models

Product Attributes

Product Attributes	Attrinute Value	Search Similar
Manufacturer Part Number:	IRFF110
Pbfree Code:	No
Part Life Cycle Code:	Transferred
Ihs Manufacturer:	INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
Package Description:	CYLINDRICAL, O-MBCY-W3
Pin Count:	2
Reach Compliance Code:	unknown
ECCN Code:	EAR99
Manufacturer:	International Rectifier
Risk Rank:	7.21
Additional Feature:	AVALANCHE RATED
Avalanche Energy Rating (Eas):	68 mJ
Configuration:	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:	100 V
Drain Current-Max (ID):	3.5 A
Drain-source On Resistance-Max:	0.69 Ω
FET Technology:	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:	O-MBCY-W3
Operating Mode:	ENHANCEMENT MODE
Package Body Material:	METAL
Package Shape:	ROUND
Package Style:	CYLINDRICAL
Peak Reflow Temperature (Cel):	NOT SPECIFIED
Polarity/Channel Type:	N-CHANNEL
Pulsed Drain Current-Max (IDM):	14 A
Qualification Status:	Not Qualified
Surface Mount:	NO
Terminal Form:	WIRE
Terminal Position:	BOTTOM
Transistor Application:	SWITCHING
Transistor Element Material:	SILICON
Number of Terminals:	3
Part Package Code:	BCY
Number of Elements:	1
JEDEC-95 Code:	TO-205AF
Show Similar

Alternative Models

Part	Compare	Manufacturers	Category	Description
Mfr.Part#:IRFF110	Compare: Current Part	Manufacturers:InternaN/Aonal recN/Afier	Category:MOSFETs	Description: Trans mosfet n-ch 100v 3.5a 3pin to-39
Mfr.Part#:IRFF110	Compare: IRFF110 VS IRFF110	Manufacturers:Infineon	Category:MOSFETs	Description: Trans mosfet n-ch 100v 3.5a 3pin to-39

Description	Value

Description	Value

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: JANTX2N6782; Power Field-Effect Transistor， 3.5A I(D)， 100V， 0.69ohm， 1-Element， N-Channel， Silicon， Metal-oxide Semiconductor FET， TO-205AF， HERMETIC SEALED， TO-39， 3 PIN; call Detail

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IRFF110 Datasheets | Power Field-Effect Transistors Power Field-Effect Transistor， 3.5A I(D)， 100V， 0.69ohm， 1-Element， N-Channel， Silicon， Metal-oxide Semiconductor FET， TO-205AF， HERMETIC SEALED， TO-39， 3 PIN

Product Overview

IRFF110 Images are for reference only.

CAD Models

Product Attributes

Alternative Models

Shopping Guide

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