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Home  Transistors - FETs, MOSFETs - Single  IRF630NSPBF Datasheets| International Rectifier | PDF| Price| In Stock

Feb 20 2021

IRF630NSPBF Datasheets| International Rectifier | PDF| Price| In Stock

Product Overview

Image:
IRF630NSPBF
Manufacturer Part#: IRF630NSPBF
Product Category: Transistors - FETs, MOSFETs - Single
Stock: No
Manufacturer: International Rectifier
Description:
Datasheet: IRF630N
Package: N/A
Minimum: 1
Lead Time: 1 Weeks
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
1: 0.72000 0.72000

IRF630NSPBF Images are for reference only.

IRF630NSPBF

CAD Models

Product Attributes

Mfr: International Rectifier

Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:IRF630NSPBF Compare: Current Part Manufacturers:Infineon Category:MOSFETs Description: D2PAK N-CH 200V 9.3A
Mfr.Part#:IRF630NSTRLPBF Compare: IRF630NSPBF VS IRF630NSTRLPBF Manufacturers:Infineon Category:MOSFETs Description: D2PAK N-CH 200V 9.3A
Mfr.Part#:IRFS4620PBF Compare: IRF630NSPBF VS IRFS4620PBF Manufacturers:Infineon Category:MOSFETs Description: D2PAK N-CH 200V 24A
Mfr.Part#:IRF630NSTRRPBF Compare: IRF630NSPBF VS IRF630NSTRRPBF Manufacturers:Infineon Category:MOSFETs Description: D2PAK N-CH 200V 9.3A

Descriptions

There is no relevant information available for this part yet.

FEATURES

Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

● Advanced Process Technology

● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements
● Lead-Free

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99

Documents & Media

Datasheets: IRF630N
Other Related Documents: IR Part Numbering System
Product Training Modules: High Voltage Integrated Circuits (HVIC Gate Drivers)
Featured Product: Data Processing Systems
PCN Design/Specification: Copper Plating Update 31/Aug/2015
PCN Assembly/Origin: Material Chg 24/Nov/2015
PCN Packaging: Alternate Assembly Site 11/Nov/2013
PCN Part Status Change: Package Drawing Update 19/Aug/2015

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
IRF630NSPBF IRF630NSPBF International Rectifier N/A On Order

1:$$0.72000

IRF630NSPBF IRF630NSPBF Infineon Technologies AG Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 On Order

N/A

Popularity by Region

  • 1. Lithuania
    100
  • 2. China
    97
  • 3. Ukraine
    97
  • 4. Russia
    91
  • 5. Malaysia
    91
  • 6. North Macedonia
    90
  • 7. United Arab Emirates
    89
  • 8. Fiji
    89
  • 9. Georgia
    89
  • 10. Denmark
    89
  • 11. Norway
    88
  • 12. United Kingdom
    88
  • 13. Singapore
    87
  • 14. ALA
    87
  • 15. Romania
    86
  • 16. Chile
    86
  • 17. Belarus
    86
  • 18. Hungary
    86
  • 19. Hong Kong
    86
  • 20. Austria
    85
  • 21. Colombia
    84
  • 22. Poland
    84
  • 23. Brazil
    84
  • 24. France
    84
  • 25. Thailand
    84
  • 26. Kenya
    84
  • 27. Sweden
    83
  • 28. Saint Kitts and Nevis
    82
  • 29. Cameroon
    82
  • 30. Tunisia
    82
  • 31. Canada
    82
  • 32. Egypt
    82
  • 33. Spain
    82
  • 34. Netherlands
    82
  • 35. Philippines
    82
  • 36. Portugal
    82
  • 37. Haiti
    82
  • 38. Ireland
    82
  • 39. Bulgaria
    81
  • 40. New Zealand
    81
  • 41. Montenegro
    81
  • 42. Nepal
    81
  • 43. Greece
    81
  • 44. Croatia
    80
  • 45. Indonesia
    80
  • 46. El Salvador
    79
  • 47. Japan
    79
  • 48. Sri Lanka
    79
  • 49. Bangladesh
    79
  • 50. Czech Republic
    79
  • 51. Latvia
    79
  • 52. Uruguay
    79
  • 53. Vietnam
    79
  • 54. Switzerland
    79
  • 55. Bolivia
    79
  • 56. Kazakhstan
    79
  • 57. Mexico
    79
  • 58. Peru
    79
  • 59. Venezuela
    79
  • 60. Aruba
    79
  • 61. Algeria
    79
  • 62. Serbia
    79
  • 63. Armenia
    78
  • 64. Ethiopia
    78
  • 65. Mauritius
    78
  • 66. Nigeria
    78
  • 67. South Africa
    78
  • 68. Israel
    78
  • 69. Madagascar
    78
  • 70. Finland
    78
  • 71. Iceland
    77
  • 72. Saudi Arabia
    77
  • 73. Morocco
    77
  • 74. Australia
    76
  • 75. Pakistan
    76
  • 76. Turkey
    76
  • 77. Uzbekistan
    76
  • 78. Trinidad and Tobago
    76
  • 79. Djibouti
    76
  • 80. Ecuador
    76
  • 81. Cyprus
    75
  • 82. Guinea
    75
  • 83. Puerto Rico
    75
  • 84. Yemen
    75
  • 85. Ghana
    74
  • 86. Benin
    74
  • 87. Malawi
    74
  • 88. Slovenia
    73
  • 89. Italy
    73
  • 90. Bosnia and Herzegovina
    73
  • 91. Malta
    73
  • 92. Jordan
    73
  • 93. Guatemala
    72
  • 94. Azerbaijan
    72
  • 95. Dominican Republic
    72
  • 96. Togo
    72
  • 97. Myanmar
    71
  • 98. Honduras
    71
  • 99. Mauritania
    70
  • 100. Suriname
    69
  • 101. Tanzania
    69
  • 102. Taiwan
    64
  • 103. Argentina
    64
  • 104. Germany
    62
  • 105. India
    62
  • 106. Belgium
    62
  • 107. South Korea
    62
  • 108. United States
    60
  • 109. Cambodia
    30
  • 110. Barbados
    29

IRF630NSPBF Popularity by Region

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FAQ:

what is irf630

IRF630/IRFS630 are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

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  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Mfr: International Rectifier

There is no relevant information available for this part yet.

FEATURES

Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

● Advanced Process Technology

● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements
● Lead-Free

There is no relevant information available for this part yet.