IRF4905STRLPBF Datasheets | Power Field-Effect Transistors Power Field-Effect Transistor， 42A I(D)， 55V， 0.02ohm， 1-Element， P-Channel， Silicon， Metal-oxide Semiconductor FET， TO-263AB， LEAD FREE， D2PAK-3 -Apogeeweb

Power Field-Effect Transistors

IRF4905STRLPBF Datasheets | Power Field-Effect Transistors Power Field-Effect Transistor， 42A I(D)， 55V， 0.02ohm， 1-Element， P-Channel， Silicon， Metal-oxide Semiconductor FET， TO-263AB， LEAD FREE， D2PAK-3

IRF4905STRLPBF Datasheets | Power Field-Effect Transistors Power Field-Effect Transistor， 42A I(D)， 55V， 0.02ohm， 1-Element， P-Channel， Silicon， Metal-oxide Semiconductor FET， TO-263AB， LEAD FREE， D2PAK-3

By apogeeweb, IRF4905STRLPBF, IRF4905STRLPBF Datasheet,IRF4905STRLPBF PDF,International Rectifier

Product Overview

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Manufacturer Part#:	IRF4905STRLPBF
Product Category:	Power Field-Effect Transistors
Stock:	On Order
Manufacturer:	International Rectifier Corp (Infineon)
Description:	Power Field-Effect Transistor， 42A I(D)， 55V， 0.02ohm， 1-Element， P-Channel， Silicon， Metal-oxide Semiconductor FET， TO-263AB， LEAD FREE， D2PAK-3
Datasheet:	N/A
Package:	SMALL OUTLINE, R-PSSO-G2
Minimum:	1
Quantity:	On Order

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Product Attributes

Product Attributes	Attrinute Value	Search Similar
Manufacturer Part Number:	IRF4905STRLPBF
Pbfree Code:	Yes
Part Life Cycle Code:	Transferred
Ihs Manufacturer:	INTERNATIONAL RECTIFIER CORP
Package Description:	SMALL OUTLINE, R-PSSO-G2
Pin Count:	3
Reach Compliance Code:	compliant
ECCN Code:	EAR99
Manufacturer:	International Rectifier
Risk Rank:	2.81
Additional Feature:	HIGH RELIABILITY, AVALANCHE RATED
Avalanche Energy Rating (Eas):	140 mJ
Case Connection:	DRAIN
Configuration:	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:	55 V
Drain Current-Max (Abs) (ID):	42 A
Drain-source On Resistance-Max:	0.02 Ω
FET Technology:	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:	R-PSSO-G2
Moisture Sensitivity Level:	1
Operating Mode:	ENHANCEMENT MODE
Operating Temperature-Max:	150 °C
Package Body Material:	PLASTIC/EPOXY
Package Shape:	RECTANGULAR
Package Style:	SMALL OUTLINE
Peak Reflow Temperature (Cel):	260
Polarity/Channel Type:	P-CHANNEL
Power Dissipation-Max (Abs):	170 W
Pulsed Drain Current-Max (IDM):	280 A
Qualification Status:	Not Qualified
Subcategory:	Other Transistors
Surface Mount:	YES
Terminal Form:	GULL WING
Terminal Position:	SINGLE
Transistor Application:	SWITCHING
Transistor Element Material:	SILICON
Number of Terminals:	2
JESD-609 Code:	e3
Terminal Finish:	MATTE TIN OVER NICKEL
Part Package Code:	D2PAK
Time@Peak Reflow Temperature-Max (s):	30
HTS Code:	8541.29.00.95
JEDEC-95 Code:	TO-263AB
Power Dissipation Ambient-Max:	150 W
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Alternative Models

Part	Compare	Manufacturers	Category	Description
Mfr.Part#:IRF4905STRLPBF	Compare: Current Part	Manufacturers:Infineon	Category:MOSFETs	Description: D2pak p-ch 55v 74a
Mfr.Part#:IRF4905SPBF	Compare: IRF4905STRLPBF VS IRF4905SPBF	Manufacturers:Infineon	Category:MOSFETs	Description: D2pak p-ch 55v 70a
Mfr.Part#:IRF4905STRRPBF	Compare: IRF4905STRLPBF VS IRF4905STRRPBF	Manufacturers:Infineon	Category:MOSFETs	Description: D2pak p-ch 55v 74a
Mfr.Part#:AUIRF4905S	Compare: IRF4905STRLPBF VS AUIRF4905S	Manufacturers:Infineon	Category:MOSFETs	Description: D2pak p-ch 55v 70a

ECCN/UNSPSC
Environmental & Export Classifications

Description	Value
USHTS:	8541290095
CNHTS:	8541290000
MXHTS:	85412999
TARIC:	8541290000
ECCN:	EAR99

Description	Value
RoHS Status:	ROHS3 Compliant
Moisture Sensitivity Level (MSL):	1 (Unlimited)

Documents	Media

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