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JS28F640J3D75 Datasheets | Flash Memories Flash, 4MX16, 75ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56

By apogeeweb, JS28F640J3D75, JS28F640J3D75 Datasheet,JS28F640J3D75 PDF,Intel Corporation

Product Overview

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JS28F640J3D75
Manufacturer Part#: JS28F640J3D75
Product Category: Flash Memories
Stock: On Order
Manufacturer: Intel
Description: Flash, 4MX16, 75ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56
Datasheet: N/A
Package: 14 X 20 MM, LEAD FREE, TSOP-56
Minimum: 1
Quantity: On Order

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Product Attributes

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Manufacturer Part Number: JS28F640J3D-75
Rohs Code: Yes
Part Life Cycle Code: Transferred
Ihs Manufacturer: INTEL CORP
Package Description: 14 X 20 MM, LEAD FREE, TSOP-56
Reach Compliance Code: compliant
Manufacturer: Intel Corporation
Risk Rank: 5.63
Access Time-Max: 75 ns
Alternate Memory Width: 8
Command User Interface: YES
JESD-30 Code: R-PDSO-G56
Length: 18.4 mm
Memory Density: 67108864 bit
Memory IC Type: FLASH
Memory Width: 16
Number of Functions: 1
Number of Sectors/Size: 64
Number of Words: 4194304 words
Number of Words Code: 4000000
Operating Mode: ASYNCHRONOUS
Operating Temperature-Max: 85 °C
Organization: 4MX16
Package Body Material: PLASTIC/EPOXY
Package Code: TSSOP
Package Equivalence Code: TSSOP56,.8,20
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial: PARALLEL
Power Supplies: 3/3.3 V
Qualification Status: Not Qualified
Seated Height-Max: 1.2 mm
Sector Size: 128K
Standby Current-Max: 0.00012 A
Subcategory: Flash Memories
Supply Current-Max: 0.08 mA
Supply Voltage-Max (Vsup): 3.6 V
Technology: CMOS
Temperature Grade: INDUSTRIAL
Terminal Form: GULL WING
Terminal Pitch: 0.5 mm
Terminal Position: DUAL
Type: NOR TYPE
Width: 14 mm
Programming Voltage: 2.7 V
Part Package Code: TSOP
Pin Count: 56
ECCN Code: 3A991.B.1.A
HTS Code: 8542.32.00.51
Peak Reflow Temperature (Cel): 260
JESD-609 Code: e3
Terminal Finish: Matte Tin (Sn)
Data Polling: NO
Operating Temperature-Min: -40 °C
Time@Peak Reflow Temperature-Max (s): 40
Supply Voltage-Nom (Vsup): 3 V
Page Size: 4/8 words
Access Time-Max:
100 ns
Manufacturer:
AMD
Package Description:
,
Pin Count:
100
Supply Voltage-Max (Vsup):
1.9 V
Supply Voltage-Min (Vsup):
1.65 V
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  • Features
  • Product Manufacturer

Introduction

This document contains information pertaining to the Numonyx™ Embedded Flash Memory (J3 v D) device features, operation, and specifications.

Product Features

■ Architecture
— Symmetrical 128-Kbyte blocks
— 256 Mbit (256 blocks)
— 128 Mbit (128 blocks)
— 64 Mbit (64 blocks)
— 32 Mbit (32 blocks)
■ Performance
— 75 ns Initial Access Speed (32,64,128 Mbit densities)
— 95 ns Initial Access Speed (256Mbit only)
— 25 ns 8-word and 4-word Asynchronous page-mode reads
— 32-Byte Write buffer; 4 µs per Byte Effective programming time
■ System Voltage
— VCC = 2.7 V to 3.6 V
— VCCQ = 2.7 V to 3.6 V
■ Packaging
— 56-Lead TSOP (32, 64, 128, 256 Mbit)
— 64-Ball Numonyx Easy BGA package (32, 64, 128 and 256 Mbit)
■ Security
— Enhanced security options for code protection
— 128-bit Protection Register: 64-bits Unique device identifier bits 64-bits User-programmable OTP bits
— Absolute protection with VPEN = GND
— Individual block locking
— Block erase/program lockout during power transitions
■ Software
— Program and erase suspend support
— Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible
■ Quality and Reliability
— Operating temperature: -40 °C to +85 °C
— 100K Minimum erase cycles per block
— 0.13 µm ETOX™ VIII Process technology

Intel enables designers of electronic systems to rapidly and cost effectively innovate, differentiate, and win in their markets. Intel offers FPGAs, SoCs, CPLDs, and Power Solutions, to provide high-value solutions to customers worldwide.

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