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IS61LV51216-8T Datasheets | SRAMs Standard SRAM, 512KX16, 8ns, CMOS, PDSO44, PLASTIC, TSOP2-44

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Product Overview

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IS61LV51216-8T
Manufacturer Part#: IS61LV51216-8T
Product Category: SRAMs
Stock: On Order
Manufacturer: Integrated Silicon Solution, Inc. (ISSI)
Description: Standard SRAM, 512KX16, 8ns, CMOS, PDSO44, PLASTIC, TSOP2-44
Datasheet: N/A
Package: TSOP2, TSOP44,.46,32
Minimum: 1
Quantity: On Order

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Product Attributes

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Manufacturer Part Number: IS61LV51216-8T
Part Life Cycle Code: Obsolete
Ihs Manufacturer: INTEGRATED SILICON SOLUTION INC
Part Package Code: TSOP2
Package Description: TSOP2, TSOP44,.46,32
Pin Count: 44
Reach Compliance Code: not_compliant
ECCN Code: 3A991.B.2.A
HTS Code: 8542.32.00.41
Manufacturer: Integrated Silicon Solution Inc
Risk Rank: 5.83
Access Time-Max: 8 ns
I/O Type: COMMON
JESD-30 Code: R-PDSO-G44
JESD-609 Code: e0
Length: 18.415 mm
Memory Density: 8388608 bit
Memory IC Type: STANDARD SRAM
Memory Width: 16
Moisture Sensitivity Level: 3
Number of Words: 524288 words
Number of Words Code: 512000
Operating Mode: ASYNCHRONOUS
Operating Temperature-Max: 70 °C
Organization: 512KX16
Output Characteristics: 3-STATE
Package Body Material: PLASTIC/EPOXY
Package Equivalence Code: TSOP44,.46,32
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE, THIN PROFILE
Parallel/Serial: PARALLEL
Peak Reflow Temperature (Cel): NOT SPECIFIED
Power Supplies: 3.3 V
Qualification Status: Not Qualified
Seated Height-Max: 1.2 mm
Standby Current-Max: 0.02 A
Standby Voltage-Min: 3.14 V
Subcategory: SRAMs
Supply Current-Max: 0.11 mA
Supply Voltage-Max (Vsup): 3.63 V
Surface Mount: YES
Technology: CMOS
Temperature Grade: COMMERCIAL
Terminal Finish: Tin/Lead (Sn/Pb)
Terminal Form: GULL WING
Terminal Pitch: 0.8 mm
Terminal Position: DUAL
Width: 10.16 mm
Number of Functions: 1
Supply Voltage-Min (Vsup): 3.135 V
Pbfree Code: No
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  • Features
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DESCRIPTION

The ISSIIS61/64LV51216 is a high-speed, 8M-bit static RAM organized as 525,288 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES

• High-speed access time:
— 8, 10, and 12 ns
• CMOS low power operation
• Low stand-by power:
— Less than 5 mA(typ.) CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Automotive temperatures available
• Lead-free available

Integrated Silicon Solution, Inc. (ISSI), is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) communications, (iii) digital consumer, and (iv) industrial and medical. Their primary products are high speed and low power SRAM and low and medium density DRAM. The company also designs and markets NOR flash products and high performance analog and mixed signal integrated circuits. They target high-growth markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. They have been a committed long-term supplier of memory products, including lower density and smaller volume products, even through periods of tight manufacturing capacity.

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