DEVICE OVERVIEW
ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.
FEATURES
• Clock frequency: 200, 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 8K refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Packages: x8/x16: 54-pin TSOP-II, 54-ball TF-BGA (x16 only) x32: 90-ball TF-BGA
• Temperature Range: Commercial (0oC to +70oC) Industrial (-40oC to +85oC) Automotive, A1 (-40oC to +85oC) Automotive, A2 (-40oC to +105oC)
Integrated Silicon Solution, Inc. (ISSI), is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) communications, (iii) digital consumer, and (iv) industrial and medical. Their primary products are high speed and low power SRAM and low and medium density DRAM. The company also designs and markets NOR flash products and high performance analog and mixed signal integrated circuits. They target high-growth markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. They have been a committed long-term supplier of memory products, including lower density and smaller volume products, even through periods of tight manufacturing capacity.