IS42S16160G-7BLI Datasheets | DRAMs Synchronous DRAM， 16MX16， 5.4ns， CMOS， PBGA54， 8 X 8 MM， 0.80 MMM， PITCH， ROHS COMPLIANT， TFBGA-54 -Apogeeweb

DRAMs

IS42S16160G-7BLI Datasheets | DRAMs Synchronous DRAM， 16MX16， 5.4ns， CMOS， PBGA54， 8 X 8 MM， 0.80 MMM， PITCH， ROHS COMPLIANT， TFBGA-54

By apogeeweb, IS42S16160G-7BLI, IS42S16160G-7BLI Datasheet,IS42S16160G-7BLI PDF,Integrated Silicon Solution Inc

Product Overview

Image:
Manufacturer Part#:	IS42S16160G-7BLI
Product Category:	DRAMs
Stock:	On Order
Manufacturer:	Integrated Silicon Solution, Inc. (ISSI)
Description:	Synchronous DRAM， 16MX16， 5.4ns， CMOS， PBGA54， 8 X 8 MM， 0.80 MMM， PITCH， ROHS COMPLIANT， TFBGA-54
Datasheet:	N/A
Package:	TFBGA, BGA54,9X9,32
Minimum:	1
Quantity:	On Order

IS42S16160G-7BLI Images are for reference only.

IS42S16160G-7BLI

CAD Models

Product Attributes

Product Attributes	Attrinute Value	Search Similar
Manufacturer Part Number:	IS42S16160G-7BLI
Rohs Code:	Yes
Part Life Cycle Code:	Not Recommended
Ihs Manufacturer:	INTEGRATED SILICON SOLUTION INC
Package Description:	TFBGA, BGA54,9X9,32
Reach Compliance Code:	compliant
Manufacturer:	Integrated Silicon Solution Inc
Risk Rank:	7.88
Access Mode:	FOUR BANK PAGE BURST
Access Time-Max:	5.4 ns
Additional Feature:	AUTO/SELF REFRESH
I/O Type:	COMMON
JESD-30 Code:	S-PBGA-B54
JESD-609 Code:	e1
Length:	8 mm
Memory Density:	268435456 bit
Memory IC Type:	SYNCHRONOUS DRAM
Memory Width:	16
Number of Functions:	1
Number of Words:	16777216 words
Number of Words Code:	16000000
Operating Mode:	SYNCHRONOUS
Operating Temperature-Max:	85 °C
Organization:	16MX16
Output Characteristics:	3-STATE
Package Body Material:	PLASTIC/EPOXY
Package Code:	TFBGA
Package Equivalence Code:	BGA54,9X9,32
Package Shape:	SQUARE
Package Style:	GRID ARRAY, THIN PROFILE, FINE PITCH
Power Supplies:	3.3 V
Qualification Status:	Not Qualified
Refresh Cycles:	8192
Seated Height-Max:	1.2 mm
Self Refresh:	YES
Standby Current-Max:	0.004 A
Subcategory:	DRAMs
Supply Current-Max:	0.13 mA
Supply Voltage-Max (Vsup):	3.6 V
Supply Voltage-Min (Vsup):	3 V
Technology:	CMOS
Temperature Grade:	INDUSTRIAL
Terminal Finish:	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form:	BALL
Terminal Pitch:	0.8 mm
Terminal Position:	BOTTOM
Clock Frequency-Max (fCLK):	143 MHz
Interleaved Burst Length:	1,2,4,8
Sequential Burst Length:	1,2,4,8,FP
ECCN Code:	EAR99
Part Package Code:	BGA
Pin Count:	54
Operating Temperature-Min:	-40 °C
Peak Reflow Temperature (Cel):	260
Time@Peak Reflow Temperature-Max (s):	10
Moisture Sensitivity Level:	3
Factory Lead Time:	6 Weeks
Show Similar

Alternative Models

Part	Compare	Manufacturers	Category	Description
Mfr.Part#:IS42S16160G-7BLI	Compare: Current Part	Manufacturers:Integrated silicon soluN/Aon(issi)	Category:RAM Memory	Description: Synchronous dram, 16mx16, 5.4ns, cmos, pbga54, 8 x 8mm, 0.80 mmm, pitch, rohs compliant, tfbga-54
Mfr.Part#:IS42S16160D-7BLI	Compare: IS42S16160G-7BLI VS IS42S16160D-7BLI	Manufacturers:Integrated silicon soluN/Aon(issi)	Category:RAM Memory	Description: Synchronous dram, 16mx16, 5.4ns, cmos, pbga54, 13 x 8mm, 0.8mm pitch, rohs compliant, ms-207, tfbga-54
Mfr.Part#:IS42S16160D-75EBLI	Compare: IS42S16160G-7BLI VS IS42S16160D-75EBLI	Manufacturers:Integrated silicon soluN/Aon(issi)	Category:Memory Chip	Description: 256m, 3.3v, sdram, 16mx16, 133mhz @ cl2, 54 ball bga (8mmx13mm) rohs, it
Mfr.Part#:IS42S16160G-7BLI-TR	Compare: IS42S16160G-7BLI VS IS42S16160G-7BLI-TR	Manufacturers:Integrated silicon soluN/Aon(issi)	Category:Memory Chip	Description: Synchronous dram, 16mx16, 5.4ns, cmos, pbga54, 8 x 8mm, 0.8mm, pitch, rohs compliant, tfbga-54

ECCN/UNSPSC

Description	Value
USHTS:	8542320024
CNHTS:	8542319000
MXHTS:	85423201
ECCN:	EAR99

Description	Value

Documents	Media

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