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SPW20N60S5 Datasheets | Discrete Semiconductors MOSFET N-Ch 600V 20A TO247-3 CoolMOS S5

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Product Overview

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SPW20N60S5
Manufacturer Part#: SPW20N60S5
Product Category: Discrete Semiconductors
Stock: On Order
Manufacturer: Infineon
Description: MOSFET N-Ch 600V 20A TO247-3 CoolMOS S5
Datasheet: N/A
Package: N/A
Minimum: 1
Quantity: On Order

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Product Attributes

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Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Mounting Style: Through Hole
Package / Case: TO-247-3
Configuration: Single
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: CoolMOS S5
Packaging: Tube
Height: 21.1 mm
Length: 16.13 mm
Width: 5.21 mm
Brand: Infineon Technologies
Pd - Power Dissipation: 208 W
Product Type: MOSFET
Factory Pack Quantity: 240
Subcategory: MOSFETs
Unit Weight: 1.340411 oz
Part # Aliases: SP000012463 SPW20N60S5FKSA1 SPW2N6S5XK
Technology: Si
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 20 A
Rds On - Drain-Source Resistance: 190 mOhms
Number of Channels: 1 Channel
Vgs - Gate-Source Voltage: 20 V
Channel Mode: Enhancement
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 130 ns
Typical Turn-On Delay Time: 120 ns
Fall Time: 30 ns
Rise Time: 25 ns
Tradename: CoolMOS
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Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:SPW20N60S5 Compare: Current Part Manufacturers:Infineon Category:MOSFETs Description: To-247 n-ch 600v 20a
Mfr.Part#:SPW16N50C3FKSA1 Compare: SPW20N60S5 VS SPW16N50C3FKSA1 Manufacturers:Infineon Category:MOSFETs Description: To-247 n-ch 560v 16a
Mfr.Part#:SIHG22N60E-GE3 Compare: SPW20N60S5 VS SIHG22N60E-GE3 Manufacturers:Vishay semiconductor Category:High Voltage MOS Description: Vishay sihg22n60e-ge3 power mosfet, n channel, 21a, 600v, 0.15ω, 10v, 2v
Mfr.Part#:SIHG22N60E-E3 Compare: SPW20N60S5 VS SIHG22N60E-E3 Manufacturers:Vishay semiconductor Category:High Voltage MOS Description: Vishay sihg22n60e-e3 power mosfet, n channel, 21a, 600v, 0.15ω, 10v, 2v

Descriptions

Single N-Channel 600 V 190 mOhm 79 nC CoolMOS™ Power Mosfet - TO-247-3:Future Electronics
MOSFET Operating temperature: -55...150 °C Housing type: TO-247 Polarity: N Variants: Enhancement mode Power dissipation: 208 W:Distrelec
Summary of Features: Innovative high voltage technology; Worldwide best R DS(on) in TO-251 and TO-252; Ultra low gate charge; Periodic avalanche rated; Extreme dv/dt rated; Ultra low effective capacitances; Improved transconductance:Infineon
Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; On Resistance Rds(On):0.19Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Product Range:-Rohs Compliant: Yes:Newark

  • Features
  • Product Manufacturer

FEATURES

 

• New revolutionary high voltage technology


• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

 

SPW20N60S5

Eupec was acquired by Infineon Technologies. Eupec offers a variety of semiconductor products including IGBT high power and standard modules, thyristors and diodes.

  • ECCN/UNSPSC
Description Value
USHTS: 8541290095
CNHTS: 8541290000
MXHTS: 85412999
TARIC: 8541290000
ECCN: EAR99
Description Value
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