Home  FETs, MOSFETs - Single  IRLB3813PBF Datasheets | Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 260A TO-220AB

IRLB3813PBF Datasheets | FETs, MOSFETs - Single MOSFET N-CH 30V 260A TO-220AB

By apogeeweb, IRLB3813PBF, IRLB3813PBF Datasheet,IRLB3813PBF PDF,Infineon Technologies

Product Overview

Image:
IRLB3813PBF
Manufacturer Part#: IRLB3813PBF
Product Category: FETs, MOSFETs - Single
Stock: 21907
Manufacturer: Infineon
Description: MOSFET N-CH 30V 260A TO-220AB
Datasheet: IRLB3813PbF
Package: TO-220AB
Minimum: 1
Quantity: 21907 PCS

CAD Models

Footprint

IRLB3813PBF  Footprint

Symbol

IRLB3813PBF  Symbol

Product Attributes

Product Attributes Attrinute Value   Search Similar
Manufacturer: Infineon Technologies
Series: HEXFET®
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Drive Voltage (Max Rds On Min Rds On): 4.5V 10V
Rds On (Max) @ Id Vgs: 1.95mOhm @ 60A 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8420pF @ 15V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Package / Case:
10-PolarPAK® (L)
Power Dissipation (Max):
1.05W (Ta)