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Home  Transistors - FETs, MOSFETs - Single  IRFZ34NSPBF Datasheets | Transistors - FETs, MOSFETs - Single N-Channel 55V 29A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK

Jan 5 2021

IRFZ34NSPBF Datasheets | Transistors - FETs, MOSFETs - Single N-Channel 55V 29A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK

Product Overview

Image:
IRFZ34NSPBF
Manufacturer Part#: IRFZ34NSPBF
Product Category: Transistors - FETs, MOSFETs - Single
Stock: No
Manufacturer: Infineon Technologies
Description: N-Channel 55V 29A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK
Datasheet: IRFZ34NSPbF, IRFZ34NLPbF
Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Minimum: 1
Lead Time: 52 Weeks
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
442: 0.30670 135.56140

IRFZ34NSPBF Images are for reference only.

IRFZ34NSPBF

CAD Models

Product Attributes

Package / Case: TO-263-3 D²Pak (2 Leads + Tab) TO-263AB
Series: HEXFET®
Mfr: Infineon Technologies
Supplier Device Package: D2PAK
Power Dissipation (Max): 3.8W (Ta) 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On Min Rds On): 10V
Rds On (Max) @ Id Vgs: 40mOhm @ 16A 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Vgs (Max): ±20V
FET Feature: -
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V

Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:IRFZ34NSPBF Compare: Current Part Manufacturers:Infineon Category:MOSFETs Description: D2PAK N-CH 55V 29A
Mfr.Part#:IRFZ34NSTRLPBF Compare: IRFZ34NSPBF VS IRFZ34NSTRLPBF Manufacturers:Infineon Category:MOSFETs Description: D2PAK N-CH 55V 29A
Mfr.Part#:IRFZ34NS Compare: IRFZ34NSPBF VS IRFZ34NS Manufacturers:Infineon Category:MOSFETs Description: D2PAK N-CH 55V 29A
Mfr.Part#:IRFZ34NSTRRPBF Compare: IRFZ34NSPBF VS IRFZ34NSTRRPBF Manufacturers:Infineon Category:MOSFETs Description: D2PAK N-CH 55V 29A

Descriptions

There is no relevant information available for this part yet.

FEATURES

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

● Advanced Process Technology

● Surface Mount (IRFZ34NS)
● Low-profile through-hole (IRFZ34NL)
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free

 

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.29.0095

Documents & Media

Datasheets: IRFZ34NSPbF, IRFZ34NLPbF
Other Related Documents: IR Part Numbering System
Product Training Modules: High Voltage Integrated Circuits (HVIC Gate Drivers)
Featured Product: Data Processing Systems
PCN Design/Specification: Material Chg 24/Nov/2015
PCN Assembly/Origin: Mult Dev No Format/Barcode Label 15/Jan/2019
PCN Packaging: Warehouse Transfer 29/Jul/2015
PCN Part Status Change: Package Drawing Update 19/Aug/2015
Simulation Models: Mult Dev Tube Pkg Disc 12/Jun/2018
Datasheets: IRFZ34NSPBF

Product Manufacturer

On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics. Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
IRFZ34NSPBF IRFZ34NSPBF International Rectifier N-Channel 55V 29A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK On Order

442:$$0.30670

IRFZ34NSPBF IRFZ34NSPBF Infineon Technologies AG Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 On Order

$0.9958

Popularity by Region

  • 1. China
    100
  • 2. Tunisia
    94
  • 3. Greenland
    87
  • 4. Indonesia
    85
  • 5. Sri Lanka
    84
  • 6. Hong Kong
    84
  • 7. Brunei Darussalam
    81
  • 8. Honduras
    81
  • 9. Palestinian Territory
    81
  • 10. Bulgaria
    81
  • 11. Norfolk Island
    81
  • 12. Benin
    81
  • 13. Guatemala
    79
  • 14. Japan
    79
  • 15. Serbia
    79
  • 16. Canada
    79
  • 17. Switzerland
    79
  • 18. Kazakhstan
    79
  • 19. Chile
    79
  • 20. Ukraine
    79
  • 21. Nigeria
    79
  • 22. Tanzania
    79
  • 23. Sweden
    79
  • 24. Norway
    78
  • 25. South Africa
    78
  • 26. Croatia
    77
  • 27. Ethiopia
    77
  • 28. Czech Republic
    77
  • 29. Romania
    77
  • 30. Peru
    77
  • 31. Australia
    77
  • 32. Jamaica
    77
  • 33. Netherlands
    77
  • 34. Portugal
    77
  • 35. Uzbekistan
    77
  • 36. Denmark
    77
  • 37. Thailand
    77
  • 38. Hungary
    76
  • 39. Iraq
    76
  • 40. Kuwait
    76
  • 41. Austria
    76
  • 42. Finland
    76
  • 43. Israel
    76
  • 44. Latvia
    76
  • 45. Philippines
    76
  • 46. Ghana
    76
  • 47. Slovakia
    76
  • 48. Kenya
    76
  • 49. Venezuela
    76
  • 50. Greece
    76
  • 51. Trinidad and Tobago
    76
  • 52. United States
    75
  • 53. Morocco
    75
  • 54. Italy
    75
  • 55. Belgium
    74
  • 56. United Arab Emirates
    74
  • 57. Armenia
    74
  • 58. Algeria
    74
  • 59. Egypt
    74
  • 60. Russia
    74
  • 61. Saudi Arabia
    74
  • 62. Bolivia
    74
  • 63. New Zealand
    74
  • 64. Slovenia
    74
  • 65. Djibouti
    74
  • 66. Dominican Republic
    73
  • 67. Spain
    73
  • 68. Malaysia
    73
  • 69. Togo
    73
  • 70. Turkey
    72
  • 71. CUW
    72
  • 72. Iceland
    72
  • 73. Argentina
    71
  • 74. Bosnia and Herzegovina
    71
  • 75. Ireland
    70
  • 76. Northern Mariana Islands
    70
  • 77. Taiwan
    69
  • 78. Mozambique
    69
  • 79. Uruguay
    69
  • 80. Myanmar
    68
  • 81. Mauritania
    68
  • 82. North Macedonia
    67
  • 83. Germany
    67
  • 84. Cameroon
    67
  • 85. Singapore
    66
  • 86. Mexico
    66
  • 87. United Kingdom
    65
  • 88. Moldova
    65
  • 89. Azerbaijan
    62
  • 90. Brazil
    62
  • 91. France
    62
  • 92. South Korea
    62
  • 93. Belarus
    62
  • 94. Poland
    62
  • 95. Colombia
    61
  • 96. India
    61
  • 97. Vietnam
    60
  • 98. Yemen
    60
  • 99. Zambia
    60
  • 100. Pakistan
    59

IRFZ34NSPBF Popularity by Region

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IRFZ34NSPBF
N-Channel 55V 29A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Package / Case: TO-263-3 D²Pak (2 Leads + Tab) TO-263AB
Series: HEXFET®
Mfr: Infineon Technologies
Supplier Device Package: D2PAK
Power Dissipation (Max): 3.8W (Ta) 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On Min Rds On): 10V
Rds On (Max) @ Id Vgs: 40mOhm @ 16A 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Vgs (Max): ±20V
FET Feature: -
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V

There is no relevant information available for this part yet.

FEATURES

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

● Advanced Process Technology

● Surface Mount (IRFZ34NS)
● Low-profile through-hole (IRFZ34NL)
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free

 

There is no relevant information available for this part yet.