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Home  Transistors - FETs, MOSFETs - Single  IRFR4105PBF Datasheets | Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 27A DPAK

Sep 8 2020

IRFR4105PBF Datasheets | Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 27A DPAK

Product Overview

Image:
IRFR4105PBF
Manufacturer Part#: IRFR4105PBF
Product Category: Transistors - FETs, MOSFETs - Single
Stock: No
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 55V 27A DPAK
Datasheet: IRFR4105PbF, IRFU4105PbF
Package: D-Pak
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
3000: 0.51407 1542.21000

IRFR4105PBF Images are for reference only.

IRFR4105PBF

CAD Models

Product Attributes

Manufacturer: Infineon Technologies
Series: HEXFET®
Packaging: Tube
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drive Voltage (Max Rds On Min Rds On): 10V
Rds On (Max) @ Id Vgs: 45mOhm @ 16A 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3 DPak (2 Leads + Tab) SC-63

Descriptions

There is no relevant information available for this part yet.

FEATURES

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

● Ultra Low On-Resistance

● Surface Mount (IRFR4105)
● Straight Lead (IRFU4105)
● Fast Switching
● Fully Avalanche Rated
● Lead-Free

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Documents & Media

Datasheets: IRFR4105PbF, IRFU4105PbF
Product Training Modules: High Voltage Integrated Circuits (HVIC Gate Drivers)
Simulation Models: IRFR4105 Saber Model
PCN Packaging: Package Drawing Update 19/Aug/2015
Featured Product: Data Processing Systems
PCN Part Status Change: Mult Dev Tube Pkg Disc 12/Jun/2018
Other Related Documents: IR Part Numbering System
PCN Design/Specification: Mult Dev No Format/Barcode Label 15/Jan/2019
HTML Datasheet: IRFR4105PbF, IRFU4105PbF

Product Manufacturer

On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics. Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
IRFR4105PBF IRFR4105PBF Infineon Technologies MOSFET N-CH 55V 27A DPAK   On Order

3,000:$0.51407

IRFR4105PBF IRFR4105PBF Infineon Technologies AG Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3   On Order

$1.0500 / $1.0849

Popularity by Region

  • 1. Sweden
    100
  • 1. Sweden
    100
  • 2. United States
    95
  • 2. United States
    95
  • 3. Finland
    92
  • 3. Finland
    92
  • 4. Kenya
    90
  • 4. Kenya
    90
  • 5. Cambodia
    89
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  • 6. China
    86
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    81
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    81
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    81
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    81
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    80
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    78
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    77
  • 19. Afghanistan
    77
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    77
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    77
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    77
  • 23. Puerto Rico
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    77
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    77
  • 25. Hungary
    77
  • 25. Hungary
    77
  • 26. Algeria
    76
  • 26. Algeria
    76
  • 27. Brazil
    76
  • 27. Brazil
    76
  • 28. Spain
    75
  • 28. Spain
    75
  • 29. Slovenia
    74
  • 29. Slovenia
    74
  • 30. Iraq
    74
  • 30. Iraq
    74
  • 31. Croatia
    74
  • 31. Croatia
    74
  • 32. Indonesia
    74
  • 32. Indonesia
    74
  • 33. Colombia
    74
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  • 35. Japan
    73
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    73
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    73
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    72
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    72
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    72
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    71
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  • 50. Pakistan
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    71
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    71
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    71
  • 54. Morocco
    71
  • 55. Italy
    71
  • 56. Belgium
    71
  • 57. Egypt
    70
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    70
  • 59. Israel
    70
  • 60. Netherlands
    70
  • 61. Australia
    70
  • 62. Djibouti
    70
  • 63. Mongolia
    70
  • 64. Ivory Coast
    70
  • 64. Ivory Coast
    70
  • 65. Ukraine
    70
  • 65. Ukraine
    70
  • 66. Singapore
    70
  • 66. Singapore
    70
  • 67. Nepal
    70
  • 67. Nepal
    70
  • 68. Thailand
    70
  • 68. Thailand
    70
  • 69. Venezuela
    70
  • 69. Venezuela
    70
  • 70. Norway
    69
  • 70. Norway
    69
  • 71. Hong Kong
    69
  • 71. Hong Kong
    69
  • 72. Philippines
    69
  • 72. Philippines
    69
  • 73. Moldova
    69
  • 73. Moldova
    69
  • 74. Austria
    69
  • 75. Serbia
    69
  • 76. Jordan
    69
  • 77. Switzerland
    69
  • 78. Turkey
    69
  • 79. Bahrain
    68
  • 80. Uzbekistan
    68
  • 81. Russia
    68
  • 82. South Africa
    68
  • 83. Kazakhstan
    67
  • 84. El Salvador
    67
  • 85. Bangladesh
    67
  • 86. Malaysia
    67
  • 87. Vietnam
    67
  • 88. Zambia
    67
  • 89. Taiwan
    66
  • 90. Latvia
    66
  • 91. Madagascar
    65
  • 92. United Arab Emirates
    65
  • 93. Myanmar
    65
  • 94. Mauritania
    65
  • 95. Ecuador
    64
  • 96. Yemen
    64
  • 97. Namibia
    63
  • 98. Malta
    62
  • 99. Niger
    58
  • 100. Oman
    57
  • 101. Cayman Islands
    57
  • 102. Iceland
    45
  • 103. Trinidad and Tobago
    44
  • 104. Barbados
    29

IRFR4105PBF Popularity by Region

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  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Manufacturer: Infineon Technologies
Series: HEXFET®
Packaging: Tube
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drive Voltage (Max Rds On Min Rds On): 10V
Rds On (Max) @ Id Vgs: 45mOhm @ 16A 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3 DPak (2 Leads + Tab) SC-63

There is no relevant information available for this part yet.

FEATURES

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

● Ultra Low On-Resistance

● Surface Mount (IRFR4105)
● Straight Lead (IRFU4105)
● Fast Switching
● Fully Avalanche Rated
● Lead-Free

There is no relevant information available for this part yet.