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IKW30N60H3FKSA1 Datasheets | IGBTs - Single IGBT 600V 60A 187W TO247-3

By apogeeweb, IKW30N60H3FKSA1, IKW30N60H3FKSA1 Datasheet,IKW30N60H3FKSA1 PDF,Infineon Technologies

Product Overview

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IKW30N60H3FKSA1
Manufacturer Part#: IKW30N60H3FKSA1
Product Category: IGBTs - Single
Stock: 743
Manufacturer: Infineon
Description: IGBT 600V 60A 187W TO247-3
Datasheet: IKW30N60H3
Package: TO-247-3
Minimum: 1
Quantity: 743 PCS

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Product Attributes

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Manufacturer: Infineon Technologies
Series: TrenchStop®
Packaging: Tube
Part Status: Active
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge Ic: 2.4V @ 15V 30A
Power - Max: 187W
Switching Energy: 1.38mJ
Input Type: Standard
Td (on/off) @ 25°C: 21ns/207ns
Test Condition: 400V 30A 10.5Ohm 15V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Current - Collector (Ic) (Max): 60A
Gate Charge: 165nC
Base Part Number: *KW30N60
Reverse Recovery Time (trr): 38ns
Package / Case:
8-TSSOP (0.173" 4.40mm Width)
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Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:IKW30N60H3FKSA1 Compare: Current Part Manufacturers:Infineon Category:IGBTs Description: Igbt single transistor, 30a, 2.4v, 187w, 600v, to-247, 3pins
Mfr.Part#:IRG4PC50WPBF Compare: IKW30N60H3FKSA1 VS IRG4PC50WPBF Manufacturers:Infineon Category:IGBTs Description: Trans igbt chip n-ch 600v 55a 200000mw 3pin(3+tab) to-247ac tube
Mfr.Part#:IRG4PC50UDPBF Compare: IKW30N60H3FKSA1 VS IRG4PC50UDPBF Manufacturers:Infineon Category:IGBTs Description: Trans igbt chip n-ch 600v 55a 200000mw 3pin(3+tab) to-247ac tube
Mfr.Part#:IRG4PC50UPBF Compare: IKW30N60H3FKSA1 VS IRG4PC50UPBF Manufacturers:Infineon Category:IGBTs Description: Trans igbt chip n-ch 600v 55a 200000mw 3pin(3+tab) to-247ac tube

Descriptions

Trans IGBT Chip N-CH 600V 60A 187000mW Automotive 3-Pin(3+Tab) TO-247 Tube:Verical
IGBT+ DIODE,600V,20A,TO247; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:187W:element14 APAC
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications:Infineon

  • Environmental & Export Classifications
  • Documents & Media
Description Value
Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Documents Media
Datasheets: IKW30N60H3
PCN Design/Specification: Datasheet Update 03/Jun/2014
Other Related Documents: Part Number Guide
Simulation Models: PSpice IGBT 1200V HighSpeed 3 Spice Model
HTML Datasheet: IKW30N60H3
Online Catalog: Standard IGBTs

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