BFP420FH6327XTSA1 Datasheets | Bipolar (BJT) - RF RF TRANS NPN 5.5V 25GHZ 4TSFP -Apogeeweb

Bipolar (BJT) - RF

BFP420FH6327XTSA1 Datasheets | Transistors - Bipolar (BJT) - RF RF TRANS NPN 5.5V 25GHZ 4TSFP

BFP420FH6327XTSA1 Datasheets | Bipolar (BJT) - RF RF TRANS NPN 5.5V 25GHZ 4TSFP

By apogeeweb, BFP420FH6327XTSA1, BFP420FH6327XTSA1 Datasheet,BFP420FH6327XTSA1 PDF,Infineon Technologies

Product Overview

Image:
Manufacturer Part#:	BFP420FH6327XTSA1
Product Category:	Bipolar (BJT) - RF
Stock:	6000
Manufacturer:	Infineon
Description:	RF TRANS NPN 5.5V 25GHZ 4TSFP
Datasheet:	Infineon-RFTransistor-AWR_MWO_Design_Kit-SM-v02_10-EN Spice Model
Package:	4-SMD, Flat Leads
Minimum:	1
Quantity:	6000 PCS

BFP420FH6327XTSA1 Images are for reference only.

BFP420FH6327XTSA1

CAD Models

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BFP420FH6327XTSA1 Footprint

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BFP420FH6327XTSA1 Symbol

Product Attributes

Product Attributes	Attrinute Value	Search Similar
Manufacturer:	Infineon Technologies
Series:	-
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	5．5V
Frequency - Transition:	25GHz
Noise Figure (dB Typ @ f):	1．1dB @ 1．8GHz
Gain:	19．5dB
Power - Max:	160mW
DC Current Gain (hFE) (Min) @ Ic Vce:	60 @ 5mA 4V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	4-SMD Flat Leads
Supplier Device Package:	4-TSFP
Base Part Number:	BFP420
Package / Case:	16-VFQFN Exposed Pad 211-07 211-11 Style 2 332A-03 355C-02 395C-01 3-SMD No Lead 3-XFDFN 4-SMD Flat Leads 4-SMD (35 micro-X) 55BT 55BT-1 55CT 55CX 55FW 55FW-1 55HV 55JT 55KV 55SM 55TU-1 6-TSSOP SC-88 SOT-363 6-XFDFN Die M216 M222 Micro-X ceramic (84C) Power Macro SC-101 SOT-883 SC-70 SOT-323 SC-75 SOT-416 SC-82A SOT-343 SC-85 SC-89 SOT-490 SOT-143R SOT-343 Reverse Pinning SOT-343F SOT-422A SOT-443A SOT-445C SOT-523 TO-205AD TO-39-3 Metal Can TO-206AF TO-72-4 Metal Can TO-225AA TO-126-3 TO-226-3 TO-92-3 (TO-226AA) TO-226-3 TO-92-3 (TO-226AA) Formed Leads TO-226-3 TO-92-3 Long Body TO-236-3 SC-59 SOT-23-3 TO-243AA TO-253-4 TO-253AA TO-261-4 TO-261AA TO-39 TO-72-3 Metal Can
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Descriptions

BFP420F Series 5.5 V 60 mA Low Noise Silicon Bipolar RF Transistor - TSFP-4-1:Future Electronics
Trans RF BJT NPN 4.5V 0.06A 210mW Automotive 4-Pin TSFP T/R:Arrow.cn
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:4.5V; Transition Frequency Ft:25Ghz; Power Dissipation Pd:210Mw; Dc Collector Current:60Ma; Dc Current Gain Hfe:60Hfe; Rf Transistor Case:tsfp; No. Of Pins:4Pins Rohs Compliant: Yes:Newark
Low Noise Silicon Bipolar RF Transistor | Summary of Features: Low noise high gain silicon bipolar RF transistor; Based on Infineons reliable very high volume 25 GHz silicon bipolar technology; 0.9 dB minimum noise figure typical at 900 MHz, 3 V, 4 mA; 16 dB maximum gain (Gma) typical at 2.4 GHz, 3 V, 15 mA; 28 dBm OIP3 typical at 2.4 GHz, 4 V, 40 mA; 16.5 dBm OP1dB typical at 2.4 GHz, 4 V, 40 mA; Popular in discrete oscillators; Thin, small, flat, Pb-free (RoHS compliant) and Hal-free; (green) package with visible leads | Target Applications: As Low Noise Amplifier (LNA) in; Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB); Multimedia applications such as mobile/portable TV, CATV, FM Radio; ISM applications like RKE, AMR and Zigbee; As discrete active mixer in RF Frontends; As active device in discretes oscillators:Infineon

ECCN/UNSPSC
Environmental & Export Classifications
Documents & Media

Description	Value
USHTS:	8541210075
CNHTS:	8541290000
MXHTS:	85412999
TARIC:	8541290000
ECCN:	EAR99

Description	Value
RoHS Status:	ROHS3 Compliant
Moisture Sensitivity Level (MSL):	1 (Unlimited)

Documents	Media
PCN Packaging:	Recyclable Glass Carrier 14/Oct/2014
Other Related Documents:	Reel Cover Tape Chg 16/Feb/2016
Simulation Models:	Part Number Guide
Datasheets:	Infineon-RFTransistor-AWR_MWO_Design_Kit-SM-v02_10-EN Spice Model
Online Catalog:	RF Discretes Selection Guide

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In Stock:6000

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