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Home  Transistors - FETs, MOSFETs - Single  IXFN48N50 Datasheets | Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 48A SOT-227B

Sep 8 2020

IXFN48N50 Datasheets | Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 48A SOT-227B

Product Overview

Image:
IXFN48N50
Manufacturer Part#: IXFN48N50
Product Category: Transistors - FETs, MOSFETs - Single
Stock: Yes
Manufacturer: IXYS
Description: MOSFET N-CH 500V 48A SOT-227B
Datasheet: IXFx4xN50
Package: SOT-227B
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: 729 PCS
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
1: 23.43000 23.43000
10: 21.60900 216.09000
25: 20.63800 515.95000
100: 18.21000 1821.00000
500: 15.53920 7769.60000

IXFN48N50 Images are for reference only.

IXFN48N50

CAD Models

Product Attributes

Manufacturer: IXYS
Series: HiPerFET™
Packaging: Tube
Part Status: Not For New Designs
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On Min Rds On): 10V
Rds On (Max) @ Id Vgs: 100mOhm @ 500mA 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4 miniBLOC

Descriptions

Trans MOSFET N-CH 500V 48A 4-Pin SOT-227B:Verical
MOSFETs w/Fast Intrinsic Diode:Onlinecomponents.com
Mosfet, N Channel, 500V, 48A, Sot-227B; Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:48A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:module; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes:Newark

FEATURES

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr

Features

International standard packages
Molding epoxies meet UL 94 V-0 flammability classification
SOT-227B miniBLOC with aluminium nitride isolation
Low RDS (on) HDMOS™ process
Unclamped Inductive Switching (UIS) rated
Fast intrinsic rectifier

ECCN / UNSPSC

Description Value
USHTS: 8541290095
CNHTS: 8541290000
CNHTS: 8541290000
MXHTS: 85415001
TARIC: 8541500000
ECCN: EAR99
ECCN: EAR99

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): Not Applicable
California Prop 65:

Documents & Media

Datasheets: IXFx4xN50
HTML Datasheet: IXFx4xN50
Online Catalog: N-Channel MOSFET (Metal Oxide)

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
IXFN48N50 IXFN48N50 IXYS MOSFET N-CH 500V 48A SOT-227B   729

1:$23.43000

10:$21.60900

25:$20.63800

100:$18.21000

500:$15.53920

IXFN48N50 IXFN48N50 N/A MOSFET 500V 48A   On Order

1:$23.43

10:$21.60

25:$20.63

100:$19.95

250:$19.38

IXFN48N50 IXFN48N50 IXYS Trans MOSFET N-CH 500V 48A 4-Pin SOT-227B:Verical
MOSFETs w/Fast Intrinsic Diode:Onlinecomponents.com
Mosfet, N Channel, 500V, 48A, Sot-227B; Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:48A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:module; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes:Newark
 
On Order

1:$16.800

IXFN48N50 IXFN48N50 IXYS Corporation Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4   On Order

$23.4300 / $27.2970

Popularity by Region

  • 1. United Arab Emirates
    100
  • 1. United Arab Emirates
    100
  • 2. Vietnam
    98
  • 2. Vietnam
    98
  • 3. South Korea
    97
  • 3. South Korea
    97
  • 4. Taiwan
    95
  • 4. Taiwan
    95
  • 5. United States
    92
  • 5. United States
    92
  • 6. Israel
    88
  • 7. Latvia
    88
  • 8. China
    81
  • 8. China
    81
  • 9. Singapore
    78
  • 9. Singapore
    78
  • 10. Kazakhstan
    76
  • 10. Kazakhstan
    76
  • 11. India
    74
  • 11. India
    74
  • 12. Pakistan
    73
  • 12. Pakistan
    73
  • 13. Serbia
    72
  • 13. Serbia
    72
  • 14. France
    72
  • 14. France
    72
  • 15. Canada
    72
  • 15. Canada
    72
  • 16. Malaysia
    72
  • 16. Malaysia
    72
  • 17. Indonesia
    72
  • 17. Indonesia
    72
  • 18. United Kingdom
    71
  • 18. United Kingdom
    71
  • 19. Australia
    71
  • 19. Australia
    71
  • 20. Argentina
    71
  • 20. Argentina
    71
  • 21. Ghana
    70
  • 21. Ghana
    70
  • 22. Sri Lanka
    69
  • 23. Poland
    69
  • 24. Brunei Darussalam
    69
  • 25. Brazil
    69
  • 26. Hong Kong
    69
  • 27. Belgium
    69
  • 28. Qatar
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  • 29. Mexico
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  • 30. Ukraine
    69
  • 31. Colombia
    69
  • 32. Sweden
    68
  • 33. Puerto Rico
    68
  • 34. Croatia
    68
  • 35. Ireland
    68
  • 36. Mozambique
    68
  • 37. Egypt
    68
  • 38. Turkey
    68
  • 39. Italy
    68
  • 40. Lithuania
    67
  • 40. Lithuania
    67
  • 41. Netherlands
    67
  • 41. Netherlands
    67
  • 42. Austria
    67
  • 42. Austria
    67
  • 43. Switzerland
    67
  • 44. Saudi Arabia
    67
  • 45. Greece
    67
  • 46. Madagascar
    66
  • 47. Philippines
    66
  • 48. Thailand
    66
  • 49. Malta
    66
  • 50. Germany
    66
  • 51. Japan
    66
  • 52. Honduras
    65
  • 53. Hungary
    65
  • 54. Belarus
    65
  • 55. New Zealand
    64
  • 56. Slovakia
    64
  • 57. Dominican Republic
    64
  • 58. Spain
    64
  • 59. Portugal
    63
  • 60. Russia
    62
  • 61. Czech Republic
    62
  • 62. Bulgaria
    61
  • 63. Bangladesh
    59
  • 64. North Macedonia
    56
  • 65. Barbados
    54
  • 66. Yemen
    52
  • 67. Tunisia
    51
  • 68. Iceland
    44

IXFN48N50 Popularity by Region

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IXFN48N50
MOSFET N-CH 500V 48A SOT-227B
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Manufacturer: IXYS
Series: HiPerFET™
Packaging: Tube
Part Status: Not For New Designs
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On Min Rds On): 10V
Rds On (Max) @ Id Vgs: 100mOhm @ 500mA 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4 miniBLOC

Trans MOSFET N-CH 500V 48A 4-Pin SOT-227B:Verical
MOSFETs w/Fast Intrinsic Diode:Onlinecomponents.com
Mosfet, N Channel, 500V, 48A, Sot-227B; Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:48A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:module; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes:Newark

FEATURES

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr

Features

International standard packages
Molding epoxies meet UL 94 V-0 flammability classification
SOT-227B miniBLOC with aluminium nitride isolation
Low RDS (on) HDMOS™ process
Unclamped Inductive Switching (UIS) rated
Fast intrinsic rectifier

There is no relevant information available for this part yet.