Product Overview
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Manufacturer Part#: | IS62WV51216BLL-55TLI |
Product Category: | Memory |
Stock: | Yes |
Manufacturer: | Issi, integrated silicon soluN/Aon inc |
Description: | IC SRAM 8M PARALLEL 44TSOP II |
Datasheet: | IS62WV51216(A,B)LL |
Package: | TSOP |
Minimum: | 1 |
Lead Time: | 3(168 Hours) |
Quantity: | 1165 PCS |
Send RFQ: | Buy |
Reference Price
Qty | Unit Price | Ext. Price |
1: | 7.12000 | 7.12000 |
10: | 6.55100 | 65.51000 |
25: | 6.41480 | 160.37000 |
50: | 6.39200 | 319.60000 |
100: | 5.73430 | 573.43000 |
250: | 5.56040 | 1390.10000 |
500: | 5.28822 | 2644.11000 |
1000: | 5.10300 | 5103.00000 |
5000: | 4.59270 | 22963.50000 |
IS62WV51216BLL-55TLI Images are for reference only.
Product Attributes
Manufacturer: | Issi integrated silicon soluN/Aon inc |
Series: | - |
Packaging: | Tray |
Part status: | AcN/Ave |
Memory type: | VolaN/Ale |
Memory format: | Sram |
Technology: | Sram - asynchronous |
Memory size: | 8mb (512k x 16) |
Memory interface: | Parallel |
Write cycle N/Ame - word page: | 55ns |
Access N/Ame: | 55ns |
Voltage - supply: | 2.5v ~ 3.6v |
OperaN/Ang temperature: | -40°c ~ 85°c (ta) |
MounN/Ang type: | Surface mount |
Package / case: | 44-tsop (0.400" 10.16mm width) |
Supplier device package: | 44-tsop ii |
Alternative Models
Part | Compare | Manufacturers | Category | Description | |
Mfr.Part#:IS62WV51216BLL-55TLI | Compare: Current Part | Manufacturers:Integrated silicon soluN/Aon(issi) | Category:RAM Memory | Description: Integrated silicon soluN/Aon (issi) is62wv51216bll-55tli ic, sram, 8mbit, 512k x 16bit, 55ns access N/Ame, ttl interface, 2.5v to 3.6v supply, tsop-ii-44 | |
Mfr.Part#:IS62WV51216BLL-55TLI-TR | Compare: IS62WV51216BLL-55TLI VS IS62WV51216BLL-55TLI-TR | Manufacturers:Integrated silicon soluN/Aon(issi) | Category:RAM Memory | Description: Sram chip async single 3.3v 8m-bit 512k x 16 55ns 44pin tsop-ii t/r |
Descriptions
sram operaN/Ang temperature: -40...85 °c power supply: 2.5...3.6 v supply current: 5 ma organisaN/Aon: 512 k x 16 bit package: tsop-44 (type ii):distrelec
sram, 8mbit, 55ns, tsop-2-44; memory size:8mbit; sram memory configuraN/Aon:512k x 16bit; supply voltage range:2.5v to 3.6v; memory case style:tsop-ii; no. of pins:44pins; access N/Ame:55ns; operaN/Ang temperature min:-40°c rohs compliant: yes:newark
descripN/Aon
theissiis62wv51216all/ is62wv51216bll are high-speed, 8m bit staN/Ac rams organized as 512k words by 16 bits. it is fabricated using issis high-performance cmos technology. this highly reliable process coupled with innovaN/Ave circuit design techniques, yields high-performance and low power consumpN/Aon devices.features
• high-speed access N/Ame: 45ns, 55ns• cmos low power operaN/Aon
– 36 mw (typical) operaN/Ang
– 12 µw (typical) cmos standby
• ttl compaN/Able interface levels
• single power supply
– 1.65v--2.2v vdd (62wv51216all)
– 2.5v--3.6v vdd (62wv51216bll)
• fully staN/Ac operaN/Aon: no clock or refresh required
• three state outputs
• data control for upper and lower bytes
• industrial temperature available
• lead-free available
ECCN / UNSPSC
Description | Value |
Ushts: | 8542320041 |
Cnhts: | 8542319000 |
Mxhts: | 85423299 |
Taric: | 8542324500 |
Eccn: | 3a991 |
Environmental & Export Classifications
Description | Value |
Rohs status: | Rohs3 compliant |
Moisture sensiN/Avity level (msl): | 3 (168 hours) |
Documents & Media
Datasheets: | IS62WV51216(A,B)LL |
EDA / CAD Models: | SRAM Part Number Guide |
HTML Datasheet: | IS62WV51216BLL-55TLI by SnapEDA |
EDA / CAD Models: | IS62WV51216(A,B)LL |
Online Catalog: | SRAM Part Number Guide |
Popularity by Region
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1. China100
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2. United States99
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3. Germany92
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4. Austria82
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5. United Kingdom82
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6. Taiwan81
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7. Vietnam76
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8. Algeria71
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9. Hungary71
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10. Serbia70
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11. Georgia70
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12. Gabon69
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13. Kazakhstan68
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14. Pitcairn68
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15. Belarus68
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16. Latvia68
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17. Kuwait68
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18. France67
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19. Denmark66
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20. Nigeria66
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21. Turkey65
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22. Japan65
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23. South Korea65
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24. Hong Kong65
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25. Slovakia65
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26. Cambodia64
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27. Czech Republic64
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28. Israel64
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29. Brunei Darussalam64
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30. Bahamas63
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31. Mexico63
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32. Italy63
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33. India63
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34. Norway62
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35. Jordan62
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36. Romania62
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37. Indonesia62
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38. Bangladesh62
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39. Iraq62
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40. Mongolia62
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41. Tanzania62
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42. Brazil61
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43. Lithuania61
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44. Cyprus61
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45. Afghanistan61
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46. Slovenia61
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47. Russia60
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48. Honduras59
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49. Sweden59
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50. Singapore59
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51. Portugal59
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52. Kyrgyzstan59
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53. Ghana59
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54. Belgium59
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55. Switzerland59
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56. Uzbekistan58
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57. Poland58
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58. Sri Lanka58
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59. Colombia58
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60. Ukraine58
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61. Iceland57
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62. Egypt57
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63. Australia57
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64. Malaysia57
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65. Philippines57
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66. Costa Rica57
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67. Tunisia56
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68. Laos56
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69. Croatia56
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70. New Zealand56
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71. Morocco56
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72. Mauritania56
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73. Pakistan56
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74. Moldova56
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75. Spain56
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76. Ethiopia56
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77. Finland55
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78. Greece55
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79. SSD55
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80. Venezuela55
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81. Peru54
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82. Bosnia and Herzegovina54
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83. Canada54
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84. Ireland54
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85. Estonia54
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86. Chile54
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87. United Arab Emirates53
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88. Thailand53
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89. Paraguay52
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90. Bulgaria52
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91. Netherlands52
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92. Dominican Republic52
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93. Albania51
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94. Armenia51
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95. Puerto Rico51
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96. South Africa51
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97. Luxembourg51
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98. Argentina50
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99. Barbados48
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100. Palestinian Territory47
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101. Saudi Arabia45
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102. El Salvador41
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103. Macao27
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5 Stars
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1 Stars
- Product Attributes
- Descriptions
- Features
- CAD Models
IS62WV51216BLL-55TLI Popularity by Region
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Manufacturer: | ISSI Integrated Silicon Solution Inc |
Series: | - |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 8Mb (512K x 16) |
Memory Interface: | Parallel |
Write Cycle Time - Word Page: | 55ns |
Access Time: | 55ns |
Voltage - Supply: | 2.5V ~ 3.6V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400" 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
sram operaN/Ang temperature: -40...85 °c power supply: 2.5...3.6 v supply current: 5 ma organisaN/Aon: 512 k x 16 bit package: tsop-44 (type ii):distrelec
sram, 8mbit, 55ns, tsop-2-44; memory size:8mbit; sram memory configuraN/Aon:512k x 16bit; supply voltage range:2.5v to 3.6v; memory case style:tsop-ii; no. of pins:44pins; access N/Ame:55ns; operaN/Ang temperature min:-40°c rohs compliant: yes:newark
descripN/Aon
theissiis62wv51216all/ is62wv51216bll are high-speed, 8m bit staN/Ac rams organized as 512k words by 16 bits. it is fabricated using issis high-performance cmos technology. this highly reliable process coupled with innovaN/Ave circuit design techniques, yields high-performance and low power consumpN/Aon devices.features
• high-speed access N/Ame: 45ns, 55ns• cmos low power operaN/Aon
– 36 mw (typical) operaN/Ang
– 12 µw (typical) cmos standby
• ttl compaN/Able interface levels
• single power supply
– 1.65v--2.2v vdd (62wv51216all)
– 2.5v--3.6v vdd (62wv51216bll)
• fully staN/Ac operaN/Aon: no clock or refresh required
• three state outputs
• data control for upper and lower bytes
• industrial temperature available
• lead-free available