FEATURES
DESCRIPTION
TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
FEATURES
• High-speed access times: 8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater noise immunity
• Easy memory expansion with CE and OE options
• CE power-down
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single power supply
Vdd 1.65V to 2.2V (IS61WV102416ALL)
speed = 20ns for Vdd 1.65V to 2.2V
Vdd 2.4V to 3.6V (IS61/64WV102416BLL)
speed = 10ns for Vdd 2.4V to 3.6V
speed = 8ns for Vdd 3.3V + 5%
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 48-pin TSOP (Type I)
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes
Integrated Silicon Solution, Inc. (ISSI), is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) communications, (iii) digital consumer, and (iv) industrial and medical. Their primary products are high speed and low power SRAM and low and medium density DRAM. The company also designs and markets NOR flash products and high performance analog and mixed signal integrated circuits. They target high-growth markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. They have been a committed long-term supplier of memory products, including lower density and smaller volume products, even through periods of tight manufacturing capacity.