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EDR2518ABSE-8C-E Datasheets | DRAMs Rambus DRAM, 16MX18, 40ns, CMOS, PBGA80, LEAD FREE, FBGA-80

By apogeeweb, EDR2518ABSE-8C-E, EDR2518ABSE-8C-E Datasheet,EDR2518ABSE-8C-E PDF,Elpida Memory Inc

Product Overview

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EDR2518ABSE-8C-E
Manufacturer Part#: EDR2518ABSE-8C-E
Product Category: DRAMs
Stock: On Order
Manufacturer: Elpida Memory
Description: Rambus DRAM, 16MX18, 40ns, CMOS, PBGA80, LEAD FREE, FBGA-80
Datasheet: N/A
Package: TFBGA, BGA80,10X18,32
Minimum: 1
Quantity: On Order

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Product Attributes

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Manufacturer Part Number: EDR2518ABSE-8C-E
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: ELPIDA MEMORY INC
Package Description: TFBGA, BGA80,10X18,32
Reach Compliance Code: unknown
Manufacturer: Elpida Memory Inc
Risk Rank: 5.8
Access Mode: BLOCK ORIENTED PROTOCOL
Access Time-Max: 40 ns
Additional Feature: SELF CONTAINED REFRESH
I/O Type: COMMON
JESD-30 Code: R-PBGA-B80
JESD-609 Code: e1
Length: 17.16 mm
Memory Density: 301989888 bit
Memory IC Type: RAMBUS DRAM
Memory Width: 18
Number of Functions: 1
Number of Words: 16777216 words
Number of Words Code: 16000000
Operating Mode: SYNCHRONOUS
Organization: 16MX18
Output Characteristics: 3-STATE
Package Body Material: PLASTIC/EPOXY
Package Code: TFBGA
Package Equivalence Code: BGA80,10X18,32
Package Shape: RECTANGULAR
Package Style: GRID ARRAY, THIN PROFILE, FINE PITCH
Power Supplies: 1.8/2.5,2.5 V
Qualification Status: Not Qualified
Seated Height-Max: 1.13 mm
Self Refresh: YES
Subcategory: DRAMs
Supply Voltage-Max (Vsup): 2.63 V
Supply Voltage-Min (Vsup): 2.37 V
Technology: CMOS
Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form: BALL
Terminal Pitch: 0.8 mm
Terminal Position: BOTTOM
Width: 10.2 mm
Clock Frequency-Max (fCLK): 800 MHz
ECCN Code: EAR99
HTS Code: 8542.32.00.28
Part Package Code: BGA
Pin Count: 80
Peak Reflow Temperature (Cel): 260
Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
Supply Voltage-Nom (Vsup): 2.5 V
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