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EDJ1108DBSE-GN-F Datasheets | DRAMs DDR DRAM, 128MX8, 0.225ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78

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Product Overview

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EDJ1108DBSE-GN-F
Manufacturer Part#: EDJ1108DBSE-GN-F
Product Category: DRAMs
Stock: On Order
Manufacturer: Elpida Memory
Description: DDR DRAM, 128MX8, 0.225ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78
Datasheet: N/A
Package: TFBGA, BGA78,9X13,32
Minimum: 1
Quantity: On Order

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Product Attributes

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Manufacturer Part Number: EDJ1108DBSE-GN-F
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: ELPIDA MEMORY INC
Package Description: TFBGA, BGA78,9X13,32
Reach Compliance Code: unknown
Manufacturer: Elpida Memory Inc
Risk Rank: 5.83
Access Mode: MULTI BANK PAGE BURST
Access Time-Max: 0.225 ns
Additional Feature: AUTO/SELF REFRESH
I/O Type: COMMON
JESD-30 Code: R-PBGA-B78
JESD-609 Code: e1
Length: 11.5 mm
Memory Density: 1073741824 bit
Memory IC Type: DDR DRAM
Memory Width: 8
Number of Functions: 1
Number of Words: 134217728 words
Number of Words Code: 128000000
Operating Mode: SYNCHRONOUS
Operating Temperature-Max: 85 °C
Organization: 128MX8
Output Characteristics: 3-STATE
Package Body Material: PLASTIC/EPOXY
Package Code: TFBGA
Package Equivalence Code: BGA78,9X13,32
Package Shape: RECTANGULAR
Package Style: GRID ARRAY, THIN PROFILE, FINE PITCH
Power Supplies: 1.5 V
Qualification Status: Not Qualified
Refresh Cycles: 8192
Seated Height-Max: 1.17 mm
Self Refresh: YES
Subcategory: DRAMs
Supply Current-Max: 0.35 mA
Supply Voltage-Max (Vsup): 1.575 V
Supply Voltage-Min (Vsup): 1.425 V
Technology: CMOS
Temperature Grade: OTHER
Terminal Form: BALL
Terminal Pitch: 0.8 mm
Terminal Position: BOTTOM
Width: 8 mm
Clock Frequency-Max (fCLK): 800 MHz
Interleaved Burst Length: 4,8
ECCN Code: EAR99
HTS Code: 8542.32.00.32
Part Package Code: BGA
Pin Count: 78
Peak Reflow Temperature (Cel): NOT SPECIFIED
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