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EDE1116AESE-6E-F Datasheets | DRAMs DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84

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Product Overview

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EDE1116AESE-6E-F
Manufacturer Part#: EDE1116AESE-6E-F
Product Category: DRAMs
Stock: On Order
Manufacturer: Elpida Memory
Description: DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84
Datasheet: N/A
Package: TFBGA, BGA84,9X15,32
Minimum: 1
Quantity: On Order

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Product Attributes

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Manufacturer Part Number: EDE1116AESE-6E-F
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: ELPIDA MEMORY INC
Package Description: TFBGA, BGA84,9X15,32
Reach Compliance Code: unknown
Manufacturer: Elpida Memory Inc
Risk Rank: 5.79
Access Mode: MULTI BANK PAGE BURST
Access Time-Max: 0.45 ns
Additional Feature: AUTO/SELF REFRESH
I/O Type: COMMON
JESD-30 Code: R-PBGA-B84
JESD-609 Code: e1
Length: 12.5 mm
Memory Density: 1073741824 bit
Memory IC Type: DDR DRAM
Memory Width: 16
Number of Functions: 1
Number of Words: 67108864 words
Number of Words Code: 64000000
Operating Mode: SYNCHRONOUS
Operating Temperature-Max: 85 °C
Organization: 64MX16
Output Characteristics: 3-STATE
Package Body Material: PLASTIC/EPOXY
Package Code: TFBGA
Package Equivalence Code: BGA84,9X15,32
Package Shape: RECTANGULAR
Package Style: GRID ARRAY
Power Supplies: 1.8 V
Qualification Status: Not Qualified
Refresh Cycles: 8192
Seated Height-Max: 1.18 mm
Self Refresh: YES
Standby Current-Max: 0.0001 A
Subcategory: DRAMs
Supply Current-Max: 0.31 mA
Supply Voltage-Max (Vsup): 1.9 V
Supply Voltage-Min (Vsup): 1.7 V
Technology: CMOS
Temperature Grade: OTHER
Terminal Form: BALL
Terminal Pitch: 0.8 mm
Terminal Position: BOTTOM
Width: 8 mm
Clock Frequency-Max (fCLK): 333 MHz
Interleaved Burst Length: 4,8
ECCN Code: EAR99
HTS Code: 8542.32.00.32
Part Package Code: BGA
Pin Count: 84
Peak Reflow Temperature (Cel): NOT SPECIFIED
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