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Home  Transistors - FETs, MOSFETs - RF  ATF-55143-TR1G Datasheets | Transistors - FETs, MOSFETs - RF FET RF 5V 2GHZ SOT-343

Sep 8 2020

ATF-55143-TR1G Datasheets | Transistors - FETs, MOSFETs - RF FET RF 5V 2GHZ SOT-343

Product Overview

Image:
ATF-55143-TR1G
Manufacturer Part#: ATF-55143-TR1G
Product Category: Transistors - FETs, MOSFETs - RF
Stock: No
Manufacturer: Broadcom Limited
Description: FET RF 5V 2GHZ SOT-343
Datasheet: ATF-55143
Package: SC-82A, SOT-343
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order
Send RFQ: Inquiry

ATF-55143-TR1G Images are for reference only.

ATF-55143-TR1G

CAD Models

Footprint

ATF-55143-TR1G  Footprint

Symbol

ATF-55143-TR1G  Symbol

Product Attributes

Manufacturer: Broadcom Limited
Series: -
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Transistor Type: E-pHEMT
Frequency: 2GHz
Gain: 17.7dB
Voltage - Test: 2.7V
Current Rating (Amps): 100mA
Noise Figure: 0.6dB
Current - Test: 10mA
Power - Output: 14.4dBm
Voltage - Rated: 5V
Package / Case: SC-82A SOT-343
Supplier Device Package: SOT-343
Base Part Number: ATF-55143

Alternative Models

Infineon BF2030WH6814XTSA1
price-
Power Dissipation-
Gate to Source Voltage (Vgs)-
Threshold Voltage40 mA
Continuous Drain Current (ID)-
Drain to Source Voltage (Vdss)SOT-343
Case/PackageSurface Mount
Mount1

Descriptions

ATF-55143-TR1G,TRANSISTOR GAAS , SINGLE UNMARKED,7IN,TRRF Bipolar Transistor; Transistor Type:RF Bipolar; Package/Case:4-SC-70; Power Dissipation, Pd:0.27W; Output Third Order Intercept Point, IP3:24.2dB; DC Current Gain Min (hfe):17.7; Frequency Max:6GHz; Frequency Min:0.45GHz ;RoHS Compliant: Yes:Newark
MOSFET, RF, HEMT, SOT-343; Transistor Polarity:N Channel; Continuous Drain Current Id:100mA; Drain Source Voltage Vds:5V; Threshold Voltage Vgs Typ:370mV; Power Dissipation Pd:270mW; Transistor Case Style:SOT-343; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:100mA; Current Idss Max:100mA; Gain Bandwidth ft Typ:2GHz; Package / Case:SOT-343; Power Dissipation Pd:270mW; Power Dissipation Pd:270mW; Power Dissipation Ptot Max:270mW; SMD Marking:5F; Termination Type:SMD; Voltage Vds Typ:2.7V; Voltage Vgs Max:1V:element14 APAC

FEATURES

Description

Avago Technologies’ ATF-55143 is a high dynamic range, very low noise, single supply E-PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package.
The combination of high gain, high linearity and low
noise makes the ATF-55143 ideal for cellular/PCS handsets, wireless data systems (WLL/RLL, WLAN and MMDS) and other systems in the 450 MHz to 6 GHz frequency range.

Features

● High linearity performance
● Single Supply Enhancement Mode Technology [1]
● Very low noise fgure
● Excellent uniformity in product specifcations
● 400 micron gate width
● Low cost surface mount small plastic package SOT-343 (4 lead SC-70)
● Tape-and-Reel packaging option available
● Lead Free Option Available

Specif cations

● 2 GHz; 2.7V, 10 mA (Typ.)
● 24.2 dBm output 3rd order intercept
● 14.4 dBm output power at 1 dB gain compression
● 0.6 dB noise fgure
● 17.7 dB associated gain
● Lead-free option available

Applications

● Low noise amplifer for cellular/PCS handsets
● LNA for WLAN, WLL/RLL and MMDS applications
● General purpose discrete E -PHEMT for other ultra low noise applications

Environmental & Export Classifications

Description Value
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Documents & Media

Datasheets: ATF-55143
PCN Assembly/Origin: Mult Device Tape Cover Chg 18/Sep/2017
PCN Obsolescence/ EOL: Mult Devices EOL 01/Dec/2017
PCN Packaging: Mult Devices Packing 25/Apr/2018

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
ATF-55143-TR1G ATF-55143-TR1G Broadcom Limited FET RF 5V 2GHZ SOT-343   On Order N/A
ATF-55143-TR1G ATF-55143-TR1G Broadcom ATF-55143-TR1G,TRANSISTOR GAAS , SINGLE UNMARKED,7IN,TRRF Bipolar Transistor; Transistor Type:RF Bipolar; Package/Case:4-SC-70; Power Dissipation, Pd:0.27W; Output Third Order Intercept Point, IP3:24.2dB; DC Current Gain Min (hfe):17.7; Frequency Max:6GHz; Frequency Min:0.45GHz ;RoHS Compliant: Yes:Newark
MOSFET, RF, HEMT, SOT-343; Transistor Polarity:N Channel; Continuous Drain Current Id:100mA; Drain Source Voltage Vds:5V; Threshold Voltage Vgs Typ:370mV; Power Dissipation Pd:270mW; Transistor Case Style:SOT-343; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:100mA; Current Idss Max:100mA; Gain Bandwidth ft Typ:2GHz; Package / Case:SOT-343; Power Dissipation Pd:270mW; Power Dissipation Pd:270mW; Power Dissipation Ptot Max:270mW; SMD Marking:5F; Termination Type:SMD; Voltage Vds Typ:2.7V; Voltage Vgs Max:1V:element14 APAC
 
On Order

1:$0.663

ATF-55143-TR1G ATF-55143-TR1G Broadcom Limited RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN   On Order

N/A

Popularity by Region

  • 1. Netherlands
    100
  • 1. Netherlands
    100
  • 2. Japan
    100
  • 2. Japan
    100
  • 3. Lithuania
    93
  • 3. Lithuania
    93
  • 4. Switzerland
    88
  • 5. Cayman Islands
    86
  • 5. Cayman Islands
    86
  • 6. Sweden
    85
  • 7. Turkey
    85
  • 8. India
    84
  • 8. India
    84
  • 9. United States
    84
  • 10. Egypt
    84
  • 11. Brazil
    82
  • 12. Kazakhstan
    82
  • 12. Kazakhstan
    82
  • 13. China
    82
  • 13. China
    82
  • 14. France
    82
  • 15. Saudi Arabia
    81
  • 16. Norway
    81
  • 17. Canada
    81
  • 17. Canada
    81
  • 18. Germany
    80
  • 18. Germany
    80
  • 19. Czech Republic
    79
  • 19. Czech Republic
    79
  • 20. Thailand
    79
  • 20. Thailand
    79
  • 21. South Korea
    79
  • 21. South Korea
    79
  • 22. United Kingdom
    79
  • 23. Spain
    79
  • 23. Spain
    79
  • 24. Ukraine
    79
  • 24. Ukraine
    79
  • 25. Tunisia
    78
  • 25. Tunisia
    78
  • 26. Denmark
    78
  • 27. Mexico
    78
  • 27. Mexico
    78
  • 28. El Salvador
    78
  • 29. Malaysia
    78
  • 30. Israel
    77
  • 30. Israel
    77
  • 31. Hong Kong
    77
  • 32. Indonesia
    76
  • 32. Indonesia
    76
  • 33. Luxembourg
    76
  • 34. Latvia
    76
  • 35. United Arab Emirates
    76
  • 35. United Arab Emirates
    76
  • 36. Cambodia
    75
  • 36. Cambodia
    75
  • 37. Papua New Guinea
    75
  • 37. Papua New Guinea
    75
  • 38. Philippines
    74
  • 39. Italy
    74
  • 39. Italy
    74
  • 40. Argentina
    74
  • 41. Mozambique
    74
  • 41. Mozambique
    74
  • 42. Russia
    74
  • 42. Russia
    74
  • 43. Australia
    73
  • 43. Australia
    73
  • 44. Slovakia
    73
  • 45. Poland
    73
  • 46. Taiwan
    72
  • 47. Peru
    72
  • 47. Peru
    72
  • 48. South Africa
    72
  • 48. South Africa
    72
  • 49. Kuwait
    72
  • 49. Kuwait
    72
  • 50. Austria
    72
  • 51. Tanzania
    72
  • 51. Tanzania
    72
  • 52. Belgium
    72
  • 52. Belgium
    72
  • 53. Singapore
    72
  • 54. Hungary
    72
  • 55. Finland
    71
  • 56. Estonia
    71
  • 56. Estonia
    71
  • 57. Belarus
    71
  • 58. Romania
    70
  • 59. Colombia
    70
  • 59. Colombia
    70
  • 60. Vietnam
    69
  • 61. Nepal
    69
  • 61. Nepal
    69
  • 62. Ireland
    69
  • 63. Madagascar
    69
  • 64. Sri Lanka
    68
  • 65. Morocco
    68
  • 66. Bulgaria
    67
  • 67. Algeria
    67
  • 67. Algeria
    67
  • 68. Greece
    67
  • 69. Portugal
    65
  • 70. Bangladesh
    65
  • 71. Pakistan
    64
  • 71. Pakistan
    64
  • 72. Iceland
    63
  • 72. Iceland
    63
  • 73. Moldova
    60

ATF-55143-TR1G Popularity by Region

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  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Manufacturer: Broadcom Limited
Series: -
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Transistor Type: E-pHEMT
Frequency: 2GHz
Gain: 17.7dB
Voltage - Test: 2.7V
Current Rating (Amps): 100mA
Noise Figure: 0.6dB
Current - Test: 10mA
Power - Output: 14.4dBm
Voltage - Rated: 5V
Package / Case: SC-82A SOT-343
Supplier Device Package: SOT-343
Base Part Number: ATF-55143

ATF-55143-TR1G,TRANSISTOR GAAS , SINGLE UNMARKED,7IN,TRRF Bipolar Transistor; Transistor Type:RF Bipolar; Package/Case:4-SC-70; Power Dissipation, Pd:0.27W; Output Third Order Intercept Point, IP3:24.2dB; DC Current Gain Min (hfe):17.7; Frequency Max:6GHz; Frequency Min:0.45GHz ;RoHS Compliant: Yes:Newark
MOSFET, RF, HEMT, SOT-343; Transistor Polarity:N Channel; Continuous Drain Current Id:100mA; Drain Source Voltage Vds:5V; Threshold Voltage Vgs Typ:370mV; Power Dissipation Pd:270mW; Transistor Case Style:SOT-343; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:100mA; Current Idss Max:100mA; Gain Bandwidth ft Typ:2GHz; Package / Case:SOT-343; Power Dissipation Pd:270mW; Power Dissipation Pd:270mW; Power Dissipation Ptot Max:270mW; SMD Marking:5F; Termination Type:SMD; Voltage Vds Typ:2.7V; Voltage Vgs Max:1V:element14 APAC

FEATURES

Description

Avago Technologies’ ATF-55143 is a high dynamic range, very low noise, single supply E-PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package.
The combination of high gain, high linearity and low
noise makes the ATF-55143 ideal for cellular/PCS handsets, wireless data systems (WLL/RLL, WLAN and MMDS) and other systems in the 450 MHz to 6 GHz frequency range.

Features

● High linearity performance
● Single Supply Enhancement Mode Technology [1]
● Very low noise fgure
● Excellent uniformity in product specifcations
● 400 micron gate width
● Low cost surface mount small plastic package SOT-343 (4 lead SC-70)
● Tape-and-Reel packaging option available
● Lead Free Option Available

Specif cations

● 2 GHz; 2.7V, 10 mA (Typ.)
● 24.2 dBm output 3rd order intercept
● 14.4 dBm output power at 1 dB gain compression
● 0.6 dB noise fgure
● 17.7 dB associated gain
● Lead-free option available

Applications

● Low noise amplifer for cellular/PCS handsets
● LNA for WLAN, WLL/RLL and MMDS applications
● General purpose discrete E -PHEMT for other ultra low noise applications

Footprint

ATF-55143-TR1G  Footprint

Symbol

ATF-55143-TR1G  Symbol