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Home  Transistors - FETs, MOSFETs - RF  ATF-36077-STR Datasheets | Transistors - FETs, MOSFETs - RF FET RF 3V 12GHZ 77-SMD

Sep 8 2020

ATF-36077-STR Datasheets | Transistors - FETs, MOSFETs - RF FET RF 3V 12GHZ 77-SMD

Product Overview

Image:
ATF-36077-STR
Manufacturer Part#: ATF-36077-STR
Product Category: Transistors - FETs, MOSFETs - RF
Stock: No
Manufacturer: Broadcom Limited
Description: FET RF 3V 12GHZ 77-SMD
Datasheet: ATF-36077
Package: 4-SMD (77 Pack)
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order
Send RFQ: Inquiry

ATF-36077-STR Images are for reference only.

ATF-36077-STR

CAD Models

Product Attributes

Manufacturer: Broadcom Limited
Series: -
Packaging: Bulk
Part Status: Obsolete
Transistor Type: pHEMT FET
Frequency: 12GHz
Gain: 12dB
Voltage - Test: 1.5V
Current Rating (Amps): 45mA
Noise Figure: 0.5dB
Current - Test: 10mA
Power - Output: 5dBm
Voltage - Rated: 3V
Package / Case: 4-SMD (77 Pack)
Supplier Device Package: 77

Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:ATF-36077-STR Compare: Current Part Manufacturers:AVAGO Technologies Category:Transistors Description: Trans JFET 3V 45mA pHEMT 4Pin Case 77 Strip
Mfr.Part#:ATF-36077-TR1 Compare: ATF-36077-STR VS ATF-36077-TR1 Manufacturers:AVAGO Technologies Category:Transistors Description: Trans JFET 3V 45mA pHEMT 4Pin Case 77 T/R
Mfr.Part#:ATF-36077-STR Compare: ATF-36077-STR VS ATF-36077-STR Manufacturers:Broadcom Category:Transistors Description: FET RF 3V 12GHz 77-SMD
Mfr.Part#:ATF-36077-TR1 Compare: ATF-36077-STR VS ATF-36077-TR1 Manufacturers:Broadcom Category:Transistors Description: Trans FET 3V 45mA pHEMT 4Pin Case 77 T/R

Descriptions

TRANSISTOR; Transistor Type:RF Bipolar; Case Style:77; Power Dissipation Pd:180mW:Farnell
TRANSISTOR; Power Dissipation Pd:180mW; RF Transistor Case:77; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Package / Case:77:element14 APAC
Bipolar Transistor; Transistor Type:RF Bipolar; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes:Newark

FEATURES

Description

Hewlett-Packard’s ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB. Addition ally, the ATF-36077 has very low noise resistance, reducing the sensitivity of noise performance
to variations in input impedance match, making the design of broadband low noise amplifiers much easier.

Features

• PHEMT Technology
• Ultra-Low Noise Figure:
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
• High Associated Gain:
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
• Low Parasitic Ceramic Microstrip Package
• Tape-and-Reel Packing Option Available

Applications

• 12 GHz DBS LNB (Low Noise Block)
• 4 GHz TVRO LNB (Low Noise Block)
• Ultra-Sensitive Low Noise Amplifiers

 

Environmental & Export Classifications

Description Value
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Documents & Media

Datasheets: ATF-36077
PCN Obsolescence/ EOL: Multiple Devices 18/Mar/2013
HTML Datasheet: ATF-36077

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
ATF-36077-STR ATF-36077-STR Broadcom Limited FET RF 3V 12GHZ 77-SMD On Order N/A
ATF-36077-STR ATF-36077-STR Broadcom TRANSISTOR; Transistor Type:RF Bipolar; Case Style:77; Power Dissipation Pd:180mW:Farnell
TRANSI

View All

TOR; Power Dissipation Pd:180mW; RF Transistor Case:77; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Package / Case:77:element14 APAC
Bipolar Transistor; Transistor Type:RF Bipolar; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes:Newark

On Order

N/A

ATF-36077-STR ATF-36077-STR Broadcom Limited RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4 On Order

N/A

Popularity by Region

  • 1. Singapore
    100
  • 2. Egypt
    97
  • 3. Latvia
    87
  • 4. Barbados
    84
  • 4. Barbados
    84
  • 5. Turkey
    84
  • 6. Sweden
    84
  • 6. Sweden
    84
  • 7. Vietnam
    82
  • 8. United Kingdom
    82
  • 9. China
    82
  • 10. France
    81
  • 10. France
    81
  • 11. Russia
    81
  • 12. Austria
    80
  • 13. Hungary
    80
  • 14. Malaysia
    80
  • 14. Malaysia
    80
  • 15. Jamaica
    80
  • 15. Jamaica
    80
  • 16. South Korea
    78
  • 17. Mexico
    78
  • 17. Mexico
    78
  • 18. El Salvador
    76
  • 18. El Salvador
    76
  • 19. Spain
    76
  • 19. Spain
    76
  • 20. Italy
    75
  • 20. Italy
    75
  • 21. Belarus
    74
  • 21. Belarus
    74
  • 22. India
    74
  • 23. Poland
    74
  • 23. Poland
    74
  • 24. Greece
    74
  • 25. Moldova
    74
  • 26. Lithuania
    74
  • 27. Brazil
    73
  • 28. Germany
    73
  • 28. Germany
    73
  • 29. United States
    73
  • 29. United States
    73
  • 30. New Zealand
    73
  • 31. Hong Kong
    73
  • 32. Israel
    72
  • 33. Netherlands
    72
  • 33. Netherlands
    72
  • 34. Canada
    72
  • 34. Canada
    72
  • 35. Slovakia
    71
  • 36. Ukraine
    71
  • 37. Indonesia
    70
  • 38. Estonia
    68

ATF-36077-STR Popularity by Region

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  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Manufacturer: Broadcom Limited
Series: -
Packaging: Bulk
Part Status: Obsolete
Transistor Type: pHEMT FET
Frequency: 12GHz
Gain: 12dB
Voltage - Test: 1.5V
Current Rating (Amps): 45mA
Noise Figure: 0.5dB
Current - Test: 10mA
Power - Output: 5dBm
Voltage - Rated: 3V
Package / Case: 4-SMD (77 Pack)
Supplier Device Package: 77

TRANSISTOR; Transistor Type:RF Bipolar; Case Style:77; Power Dissipation Pd:180mW:Farnell
TRANSISTOR; Power Dissipation Pd:180mW; RF Transistor Case:77; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Package / Case:77:element14 APAC
Bipolar Transistor; Transistor Type:RF Bipolar; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes:Newark

FEATURES

Description

Hewlett-Packard’s ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB. Addition ally, the ATF-36077 has very low noise resistance, reducing the sensitivity of noise performance
to variations in input impedance match, making the design of broadband low noise amplifiers much easier.

Features

• PHEMT Technology
• Ultra-Low Noise Figure:
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
• High Associated Gain:
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
• Low Parasitic Ceramic Microstrip Package
• Tape-and-Reel Packing Option Available

Applications

• 12 GHz DBS LNB (Low Noise Block)
• 4 GHz TVRO LNB (Low Noise Block)
• Ultra-Sensitive Low Noise Amplifiers

 

There is no relevant information available for this part yet.