Product Overview
| Image: |
 |
| Manufacturer Part#: | ATF-36077-STR |
| Product Category: | Transistors - FETs, MOSFETs - RF |
| Stock: | No |
| Manufacturer: | Broadcom Limited |
| Description: | FET RF 3V 12GHZ 77-SMD |
| Datasheet: | ATF-36077 |
| Package: | 4-SMD (77 Pack) |
| Minimum: | 1 |
| Lead Time: | 3(168 Hours) |
| Quantity: | On Order |
| Send RFQ: | Inquiry |
ATF-36077-STR Images are for reference only.
CAD Models
Product Attributes
| Manufacturer: | Broadcom Limited |
| Series: | - |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | pHEMT FET |
| Frequency: | 12GHz |
| Gain: | 12dB |
| Voltage - Test: | 1．5V |
| Current Rating (Amps): | 45mA |
| Noise Figure: | 0．5dB |
| Current - Test: | 10mA |
| Power - Output: | 5dBm |
| Voltage - Rated: | 3V |
| Package / Case: | 4-SMD (77 Pack) |
| Supplier Device Package: | 77 |
Descriptions
TRANSISTOR; Transistor Type:RF Bipolar; Case Style:77; Power Dissipation Pd:180mW:Farnell
TRANSISTOR; Power Dissipation Pd:180mW; RF Transistor Case:77; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Package / Case:77:element14 APAC
Bipolar Transistor; Transistor Type:RF Bipolar; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes:Newark
TRANSISTOR; Power Dissipation Pd:180mW; RF Transistor Case:77; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Package / Case:77:element14 APAC
Bipolar Transistor; Transistor Type:RF Bipolar; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes:Newark
FEATURES
Description
Hewlett-Packard’s ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB. Addition ally, the ATF-36077 has very low noise resistance, reducing the sensitivity of noise performanceto variations in input impedance match, making the design of broadband low noise amplifiers much easier.
Features
• PHEMT Technology• Ultra-Low Noise Figure:
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
• High Associated Gain:
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
• Low Parasitic Ceramic Microstrip Package
• Tape-and-Reel Packing Option Available
Applications
• 12 GHz DBS LNB (Low Noise Block)• 4 GHz TVRO LNB (Low Noise Block)
• Ultra-Sensitive Low Noise Amplifiers
Environmental & Export Classifications
| Description | Value |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Documents & Media
| Datasheets: | ATF-36077 |
| PCN Obsolescence/ EOL: | Multiple Devices 18/Mar/2013 |
| HTML Datasheet: | ATF-36077 |
Distributors
| Image | PartNo | Manufacturer | Descriptions | Stock | Step Price |
|
|
ATF-36077-STR | Broadcom Limited | FET RF 3V 12GHZ 77-SMD | On Order | N/A |
|
|
ATF-36077-STR | Broadcom | TRANSISTOR; Transistor Type:RF Bipolar; Case Style:77; Power Dissipation Pd:180mW:Farnell TRANSISTOR; Power Dissipation Pd:180mW; RF Transistor Case:77; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Package / Case:77:element14 APAC Bipolar Transistor; Transistor Type:RF Bipolar; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes:Newark |
On Order | N/A |
|
|
ATF-36077-STR | Broadcom Limited | RF Small Signal Field-Effect Transistor， 1-Element， X Band， Gallium Arsenide， N-Channel， High Electron Mobility FET， CERAMIC， MICROSTRIP PACKAGE-4 | On Order | N/A |
Popularity by Region
-
1. Singapore100
-
2. Egypt97
-
3. Latvia87
-
4. Barbados84
-
4. Barbados84
-
5. Turkey84
-
6. Sweden84
-
6. Sweden84
-
7. Vietnam82
-
8. United Kingdom82
-
9. China82
-
10. France81
-
10. France81
-
11. Russia81
-
12. Austria80
-
13. Hungary80
-
14. Malaysia80
-
14. Malaysia80
-
15. Jamaica80
-
15. Jamaica80
-
16. South Korea78
-
17. Mexico78
-
17. Mexico78
-
18. El Salvador76
-
18. El Salvador76
-
19. Spain76
-
19. Spain76
-
20. Italy75
-
20. Italy75
-
21. Belarus74
-
21. Belarus74
-
22. India74
-
23. Poland74
-
23. Poland74
-
24. Greece74
-
25. Moldova74
-
26. Lithuania74
-
27. Brazil73
-
28. Germany73
-
28. Germany73
-
29. United States73
-
29. United States73
-
30. New Zealand73
-
31. Hong Kong73
-
32. Israel72
-
33. Netherlands72
-
33. Netherlands72
-
34. Canada72
-
34. Canada72
-
35. Slovakia71
-
36. Ukraine71
-
37. Indonesia70
-
38. Estonia68
- MRF6S20010GNR1
- FET RF 68V 2.17GHZ TO270-2 GW
- call Detail
- ATF22V10CQ-15JU
- IC PLD 10MC 15NS 28PLCC
- call Detail
- MRF5S9100NBR1
- FET RF 68V 880MHZ TO-272-4
- call Detail
- ATF750LVC-15XU
- IC CPLD 10MC 15NS 24TSSOP
- call Detail
- MRF8S7235NR3
- FET RF 70V 728MHZ OM780-2
- call Detail
- MRF5S19060MR1
- FET RF 65V 1.99GHZ TO-270-4
- call Detail
- A2T20H160W04NR3
- RF MOSFET LDMOS DUAL 28V OM780-4
- call Detail
- ATF22V10CQZ-20PU
- IC PLD 10MC 20NS 24DIP
- call Detail
- MRF6S18140HSR3
- FET RF 68V 1.88GHZ NI880S
- call Detail
- MRF9060NR1
- FET RF 65V 945MHZ TO270-2
- call Detail
- 1N5711
- 2N3700
- CGH40120F
- DDZ9689-7
- JAN1N4148-1
- JANTX1N4148-1
- JANTX1N4148UR-1
- JANTX1N5811
- JANTX1N751A-1
- JANTXV1N5811US
- JANTXV1N6642U
- JANTXV2N2907AUB
- MA4PBL027
- STP60NF06
- TIP41C
- 1N4148WT-7
- 1N4148WX-TP
- 1SS355TE-17
- 2N5460
- 2N7002E-T1-E3
- 2N7002W-7-F
- 2SC2712-Y,LF
- ATF-55143-TR1G
- B140-E3/61T
- B230A-13-F
- B340A-13-F
- B340A-E3/61T
- B360-13-F
- BAS16LT1G
- BAS21LT1G
- Transistors - FETs, MOSFETs - RF,FET RF 2CH 65V 500MHZ 375-04
- Transistors - FETs, MOSFETs - RF,FET RF 110V 450MHZ TO-272-4
- Transistors - FETs, MOSFETs - RF,FET RF 68V 2.17GHZ NI-780
- Transistors - FETs, MOSFETs - RF,MOSFET 2N-CH 10V 30MA SOT343R
- Transistors - FETs, MOSFETs - RF,IC TRANS RF LDMOS
- Transistors - FETs, MOSFETs - RF,RF PWR MOSFET 300V 25A DIE
-
5 Stars
-
4 Stars
-
3 Stars
-
2 Stars
-
1 Stars
- Product Attributes
- Descriptions
- Features
- CAD Models
ATF-36077-STR Popularity by Region
You May Also Be Interested In
Popular Search:
Shopping Guide:
| Shipping | Delivery period | For in stock parts, orders generally can be ready to ship within 4 hours. |
| Apogeeweb ships orders once a day at about 5pm except Sunday. | ||
| Once shipped, estimated delivery time depends on the below carriers you chose. | ||
| Shipping rates | Shipping rates for your order can be found in the shopping cart. | |
| Shipping option | We provide DHL, FedEx, Ups, Singpost international shipping. | |
| Shipping tracking | We will notify you by email with tracking number once order is shipped. | |
| You can also find the tracking number in order history. | ||
| Returning/warranty | Returning | Returns are normally accepted when completed within 365 days from date of shipment, please contact customer service for a return authorization. |
| Parts should be unused and in original packaging. | ||
| Customer has to take charge for the shipping. | ||
| Warranty | All Apogeeweb purchases come with a 90-day Apogeeweb warranty against any manufacturing defects. | |
| If the customer complains the product is "renovation/fake/having quality problem", and ask for a change or refund, the related procedures can be carried out only after an effective test report from a authoritative third party was provided. | ||
| Ordering | How to Buy | Apogeeweb accepts online orders. |
| Add to cart > Login> Check out > Submit order > Complete payment >Delivery | ||
| Payment | PayPal, Credit Card, Wire Transfer and Western Union |
Related Parameter
0 comment
Leave a Reply
0/ 5
| Manufacturer: | Broadcom Limited |
| Series: | - |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | pHEMT FET |
| Frequency: | 12GHz |
| Gain: | 12dB |
| Voltage - Test: | 1．5V |
| Current Rating (Amps): | 45mA |
| Noise Figure: | 0．5dB |
| Current - Test: | 10mA |
| Power - Output: | 5dBm |
| Voltage - Rated: | 3V |
| Package / Case: | 4-SMD (77 Pack) |
| Supplier Device Package: | 77 |
TRANSISTOR; Transistor Type:RF Bipolar; Case Style:77; Power Dissipation Pd:180mW:Farnell
TRANSISTOR; Power Dissipation Pd:180mW; RF Transistor Case:77; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Package / Case:77:element14 APAC
Bipolar Transistor; Transistor Type:RF Bipolar; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes:Newark
TRANSISTOR; Power Dissipation Pd:180mW; RF Transistor Case:77; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Package / Case:77:element14 APAC
Bipolar Transistor; Transistor Type:RF Bipolar; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes:Newark
FEATURES
Description
Hewlett-Packard’s ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB. Addition ally, the ATF-36077 has very low noise resistance, reducing the sensitivity of noise performanceto variations in input impedance match, making the design of broadband low noise amplifiers much easier.
Features
• PHEMT Technology• Ultra-Low Noise Figure:
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
• High Associated Gain:
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
• Low Parasitic Ceramic Microstrip Package
• Tape-and-Reel Packing Option Available
Applications
• 12 GHz DBS LNB (Low Noise Block)• 4 GHz TVRO LNB (Low Noise Block)
• Ultra-Sensitive Low Noise Amplifiers
There is no relevant information available for this part yet.