Product Overview
| Image: |
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| Manufacturer Part#: | ATF-36077-STR |
| Product Category: | Transistors - FETs, MOSFETs - RF |
| Stock: | No |
| Manufacturer: | Broadcom Limited |
| Description: | FET RF 3V 12GHZ 77-SMD |
| Datasheet: | ATF-36077 |
| Package: | 4-SMD (77 Pack) |
| Minimum: | 1 |
| Lead Time: | 3(168 Hours) |
| Quantity: | On Order |
| Send RFQ: | Inquiry |
ATF-36077-STR Images are for reference only.
CAD Models
Product Attributes
| Manufacturer: | Broadcom Limited |
| Series: | - |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | pHEMT FET |
| Frequency: | 12GHz |
| Gain: | 12dB |
| Voltage - Test: | 1．5V |
| Current Rating (Amps): | 45mA |
| Noise Figure: | 0．5dB |
| Current - Test: | 10mA |
| Power - Output: | 5dBm |
| Voltage - Rated: | 3V |
| Package / Case: | 4-SMD (77 Pack) |
| Supplier Device Package: | 77 |
Alternative Models
| Part | Compare | Manufacturers | Category | Description | |
| Mfr.Part#:ATF-36077-STR | Compare: Current Part | Manufacturers:AVAGO Technologies | Category:Transistors | Description: Trans JFET 3V 45mA pHEMT 4Pin Case 77 Strip | |
| Mfr.Part#:ATF-36077-TR1 | Compare: ATF-36077-STR VS ATF-36077-TR1 | Manufacturers:AVAGO Technologies | Category:Transistors | Description: Trans JFET 3V 45mA pHEMT 4Pin Case 77 T/R | |
| Mfr.Part#:ATF-36077-STR | Compare: ATF-36077-STR VS ATF-36077-STR | Manufacturers:Broadcom | Category:Transistors | Description: FET RF 3V 12GHz 77-SMD | |
| Mfr.Part#:ATF-36077-TR1 | Compare: ATF-36077-STR VS ATF-36077-TR1 | Manufacturers:Broadcom | Category:Transistors | Description: Trans FET 3V 45mA pHEMT 4Pin Case 77 T/R |
Descriptions
TRANSISTOR; Transistor Type:RF Bipolar; Case Style:77; Power Dissipation Pd:180mW:Farnell
TRANSISTOR; Power Dissipation Pd:180mW; RF Transistor Case:77; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Package / Case:77:element14 APAC
Bipolar Transistor; Transistor Type:RF Bipolar; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes:Newark
TRANSISTOR; Power Dissipation Pd:180mW; RF Transistor Case:77; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Package / Case:77:element14 APAC
Bipolar Transistor; Transistor Type:RF Bipolar; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes:Newark
FEATURES
Description
Hewlett-Packard’s ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB. Addition ally, the ATF-36077 has very low noise resistance, reducing the sensitivity of noise performanceto variations in input impedance match, making the design of broadband low noise amplifiers much easier.
Features
• PHEMT Technology• Ultra-Low Noise Figure:
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
• High Associated Gain:
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
• Low Parasitic Ceramic Microstrip Package
• Tape-and-Reel Packing Option Available
Applications
• 12 GHz DBS LNB (Low Noise Block)• 4 GHz TVRO LNB (Low Noise Block)
• Ultra-Sensitive Low Noise Amplifiers
Environmental & Export Classifications
| Description | Value |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Documents & Media
| Datasheets: | ATF-36077 |
| PCN Obsolescence/ EOL: | Multiple Devices 18/Mar/2013 |
| HTML Datasheet: | ATF-36077 |
Distributors
| Image | PartNo | Manufacturer | Descriptions | Stock | Step Price |
|
|
ATF-36077-STR | Broadcom Limited | FET RF 3V 12GHZ 77-SMD | On Order | N/A |
|
|
ATF-36077-STR | Broadcom | TRANSISTOR; Transistor Type:RF Bipolar; Case Style:77; Power Dissipation Pd:180mW:Farnell TRANSISTOR; Power Dissipation Pd:180mW; RF Transistor Case:77; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Package / Case:77:element14 APAC Bipolar Transistor; Transistor Type:RF Bipolar; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes:Newark |
On Order | N/A |
|
|
ATF-36077-STR | Broadcom Limited | RF Small Signal Field-Effect Transistor， 1-Element， X Band， Gallium Arsenide， N-Channel， High Electron Mobility FET， CERAMIC， MICROSTRIP PACKAGE-4 | On Order | N/A |
Popularity by Region
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1. Singapore100
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2. Egypt97
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3. Latvia87
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4. Barbados84
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4. Barbados84
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5. Turkey84
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6. Sweden84
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6. Sweden84
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7. Vietnam82
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8. United Kingdom82
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9. China82
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10. France81
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10. France81
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11. Russia81
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12. Austria80
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13. Hungary80
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14. Malaysia80
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14. Malaysia80
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15. Jamaica80
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15. Jamaica80
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16. South Korea78
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17. Mexico78
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17. Mexico78
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18. El Salvador76
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18. El Salvador76
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19. Spain76
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19. Spain76
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20. Italy75
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20. Italy75
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21. Belarus74
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21. Belarus74
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22. India74
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23. Poland74
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23. Poland74
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24. Greece74
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25. Moldova74
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26. Lithuania74
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27. Brazil73
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28. Germany73
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28. Germany73
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29. United States73
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29. United States73
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30. New Zealand73
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31. Hong Kong73
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32. Israel72
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33. Netherlands72
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33. Netherlands72
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34. Canada72
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34. Canada72
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35. Slovakia71
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36. Ukraine71
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37. Indonesia70
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38. Estonia68
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5 Stars
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4 Stars
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3 Stars
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2 Stars
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1 Stars
- Product Attributes
- Descriptions
- Features
- CAD Models
ATF-36077-STR Popularity by Region
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| Manufacturer: | Broadcom Limited |
| Series: | - |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | pHEMT FET |
| Frequency: | 12GHz |
| Gain: | 12dB |
| Voltage - Test: | 1．5V |
| Current Rating (Amps): | 45mA |
| Noise Figure: | 0．5dB |
| Current - Test: | 10mA |
| Power - Output: | 5dBm |
| Voltage - Rated: | 3V |
| Package / Case: | 4-SMD (77 Pack) |
| Supplier Device Package: | 77 |
TRANSISTOR; Transistor Type:RF Bipolar; Case Style:77; Power Dissipation Pd:180mW:Farnell
TRANSISTOR; Power Dissipation Pd:180mW; RF Transistor Case:77; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Package / Case:77:element14 APAC
Bipolar Transistor; Transistor Type:RF Bipolar; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes:Newark
TRANSISTOR; Power Dissipation Pd:180mW; RF Transistor Case:77; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Package / Case:77:element14 APAC
Bipolar Transistor; Transistor Type:RF Bipolar; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes:Newark
FEATURES
Description
Hewlett-Packard’s ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB. Addition ally, the ATF-36077 has very low noise resistance, reducing the sensitivity of noise performanceto variations in input impedance match, making the design of broadband low noise amplifiers much easier.
Features
• PHEMT Technology• Ultra-Low Noise Figure:
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
• High Associated Gain:
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
• Low Parasitic Ceramic Microstrip Package
• Tape-and-Reel Packing Option Available
Applications
• 12 GHz DBS LNB (Low Noise Block)• 4 GHz TVRO LNB (Low Noise Block)
• Ultra-Sensitive Low Noise Amplifiers
There is no relevant information available for this part yet.