HMC788ALP2ETR Datasheets | RF Amplifiers IC RF AMP LTE 0HZ-10GHZ 6LFCSP
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HMC788ALP2ETR, HMC788ALP2ETR Datasheet,HMC788ALP2ETR PDF,Analog Devices Inc.
Descriptions
RF Amp Chip Single GP 10000MHz 7V 6-Pin DFN T/R:Avnet Europe
RF Amplifier 10 GHz gain block, Linr Drive/Gain Block:Component Sense
The HMC788A is a 0.01 GHz to 10 GHz, gain block, monolithic microwave integrated circuit (MMIC) amplifier using gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) technology. This 2 mm × 2 mm LFCSP amplifier can be used as either a cascadable 50 Ω gain stage, or to drive the local oscillator (LO) port of many of the single and double balanced mixers from Analog Devices, Inc. with up to 20 dBm output power. The HMC788A offers 14 dB of gain and an output IP3 of 33 dBm while requiring only 76 mA from a 5 V supply. The Darlington feedback pair exhibits reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. Applications Cellular, 3G, LTE, WiMAX, and 4G LO driver applications Microwave radio Test and measurement equipment Ultra wideband (UWB) communications:Analog Devices