HMC435AMS8GETR Datasheets | RF Switches IC RF SWITCH SPDT 4GHZ 8MSOP
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HMC435AMS8GETR, HMC435AMS8GETR Datasheet,HMC435AMS8GETR PDF,Analog Devices Inc.
Descriptions
RF Switch SPDT 0MHz to 4GHz 30dB 8-Pin MSOP EP T/R:Chip One Stop Japan
Spdt Hi Isolation Switch Smt, Dc - 4 Ghz / Reel7:Newark
Hittite Microwave product from Analog Devices:Chip One Stop Global
The HMC435AMS8G(E) is a non-reflective DC to 4 GHz GaAs MESFET SPDT switch in a low cost 8 lead MSOP8G surface mount package with exposed ground paddle. The switch is ideal for cellular/3G and WiMAX/4G applications yielding up to 60 dB isolation, low 0.8 dB insertion loss and +50 dBm input IP3. Power handling is excellent up through the 3.8 GHz WiMAX band with the switch offering a P1dB compression of +30 dBm. On-chip circuitry allows positive voltage control of 0/+5 Volts at very low DC currents. Applications Basestations & Repeaters Cellular/3G and WiMAX/4G Infrastructure and Access Points CATV/CMTS Test Instrumentation:Analog Devices