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JANTX2N6287 Datasheets | Bipolar (BJT) - Single TRANS PNP DARL 100V 20A TO-3

By apogeeweb, JANTX2N6287, JANTX2N6287 Datasheet,JANTX2N6287 PDF,American Microsemiconductor, Inc.

Product Overview

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JANTX2N6287
Manufacturer Part#: JANTX2N6287
Product Category: Bipolar (BJT) - Single
Stock: 126
Manufacturer: American Microsemiconductor, Inc.
Description: TRANS PNP DARL 100V 20A TO-3
Datasheet: 2N6286 & 2N6287
Package: TO-204AA, TO-3
Minimum: 1
Quantity: 126 PCS

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Product Attributes

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Manufacturer: American Microsemiconductor Inc.
Series: -
Packaging: Bulk
Part Status: Active
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib Ic: 3V @ 200mA 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic Vce: 1500 @ 1A 3V
Power - Max: 175W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA TO-3
Supplier Device Package: TO-204AA (TO-3)
Package / Case:
3-PowerUDFN
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Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:JANTX2N6287 Compare: Current Part Manufacturers:Microsemi Category:BJTs Description: Trans darlington pnp 100v 20a 175000mw 3pin(2+tab) to-3
Mfr.Part#:2N6287G Compare: JANTX2N6287 VS 2N6287G Manufacturers:On semiconductor Category:BJTs Description: To-3 pnp 100v 20a
Mfr.Part#:2N6287 Compare: JANTX2N6287 VS 2N6287 Manufacturers:St microelectronics Category:BJTs Description: Trans darlington pnp 100v 20a 160000mw 3pin(2+tab) to-3 bag
Mfr.Part#:JANTXV2N6287 Compare: JANTX2N6287 VS JANTXV2N6287 Manufacturers:M/a-com Category: Description: Diode

Descriptions

JANTX Series PNP 175 W 100 V 20 A SMT Bipolar Power Transistor - TO-204 AA:Future Electronics
Trans Darlington PNP 100V 20A 175000mW 3-Pin(2+Tab) TO-3 Tray:Verical

  • Features
  • Product Manufacturer

FEATURES

With one of these PNP JANTX2N6287 Darlington transistors from Microsemi, you'll be able to process much higher current gain values within your circuit. This product's maximum continuous DC collector current is 20 A, while its minimum DC current gain is 1500@1A@3 V|1250@10A@3V|300@20A@3V. It has a maximum collector emitter saturation voltage of 2@40mA@10A|3@200mA@20A V. This Darlington transistor array's maximum emitter base voltage is 7 V, while its maximum base emitter saturation voltage is 4@200mA@20A V. Its maximum power dissipation is 175000 mW. This Darlington transistor array has an operating temperature range of -65 °C to 175 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.

American Microsemiconductor, Inc. specializes in supplying semiconductor components and other discrete electronics to commercial, industrial, high-reliability military and aerospace industries.  For over four decades American Microsemiconductor has prided itself on excellence, reliability, on-time delivery and affordability to satisfy all customers.

  • ECCN/UNSPSC
  • Environmental & Export Classifications
  • Documents & Media
Description Value
USHTS: 8541100080
CNHTS: 8541100000
MXHTS: 85411001
TARIC: 8541100000
ECCN: EAR99
Description Value
RoHS Status: Not applicable
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Documents Media
Datasheets: 2N6286 & 2N6287

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In Stock:126
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