FEATURES
GENERAL DESCRIPTION
ALD110802/ALD110902 are high precision monolithic quad/dual enhance ment mode N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. The ALD110802/ALD110902 MOSFETS are designed and built for exceptional device electrical characteristics matching.
FEATURES
• Enhancement-mode (normally off)
• Precision Gate Threshold Voltage of +0.20V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• VGS(th)match (VOS) to 10mV
• High input impedance — 10
12 Ω typical
• Positive, zero, and negative VGS(th)temperature coefficient
• DC current gain >10
8 • Low input and output leakage currents
Advanced Linear Devices, Inc., (ALD) develops and manufactures ultra-low-power, precision CMOS analog integrated circuits, related board level products and Energy Harvesting Modules and accessories incorporating the company's exclusive EPAD® technology. ALD's standard semiconductor products include a full complement of "best-of-breed" ultra-low-charge-injection low-voltage analog switches, dual-slope A/D converters and digital processors, precision voltage comparators, precision rail-to-rail CMOS operational amplifiers, and low-drift CMOS timers with high discharge output, as well as an extensive selection of enhancement, depletion, and zero-threshold mode EPAD matched small signal MOSFET arrays.