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K4T1G164QE-HCF7 vs W971GG6JB-18 vs NT5TU64M16HG-AC Comparison

  • Hide Shared Attributes
    K4T1G164QE-HCF7
    K4T1G164QE-HCF7
    W971GG6JB-18
    W971GG6JB-18
    NT5TU64M16HG-AC
    NT5TU64M16HG-AC
  • Part No.
    K4T1G164QE-HCF7
    W971GG6JB-18
    NT5TU64M16HG-AC
  • Description
    1GB E-die DDR2 SDRAM(60FBGA/84FBGA with Lead-Free & Halogen-Free)
    8M X 8 BANKS X 16Bit DDR2 SDRAM
    DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84Pin BGA
  • Manufacturer
    Samsung
    Winbond electronics
    Nanya
  • Classification
    -
    RAM Memory
    -
  • Reference Price(USD)
    $10.303
    $1.046
    $1.616
  • Inventory(pcs)
    10.2k
    0
    0
  • Case/Package
    BGA
    BGA
    BGA
  • Number of Pins
    -
    -
    84
  • Number of Bits
    -
    -
    16
  • ECCN Code
    -
    -
    EAR99
  • HK STC License
    -
    -
    NLR
  • Mounting Style
    Surface Mount
    Surface Mount
    -
  • Packaging
    -
    Tray
    Tape & Reel (TR)
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Obsolete
    Obsolete
    Active
  • Access Time(Max)
    -
    -
    0.4 ns
  • Operating Temperature (Max)
    -
    -
    95 ℃
  • Operating Temperature (Min)
    -
    -
    0 ℃
  • Overview
    K4T1G164QE-HCF7 Product overview

    The 1Gb DDR2 SDRAM is organized asa 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard VDD= 1.8V ± 0.1V Power Supply •VDDQ= 1.8V ± 0.1V • 333MHz fCKfor 667Mb/sec/pin, 400MHz fCKfor 800Mb/sec/pin • 8 Banks • Posted CAS • Programmable CASLatency: 3, 4, 5, 6 • Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5 • Write Latency(WL) = Read Latency(RL) -1 • Burst Length: 4 , 8(Interleave/nibble sequential) • Programmable Sequential / Interleave Burst Mode • Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature) • Off-Chip Driver(OCD) Impedance Adjustment • On Die Termination • Special Function Support   - 50ohm ODT   - High Temperature Self-Refresh rate enable • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE <95 °C • All of products are Lead-Free, Halogen-Free, and RoHS compliant

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    W971GG6JB-18 Product overview

    GENERAL DESCRIPTION The W971GG6JB is a 1G bits DDR2 SDRAM, organized as 8,388,608 words 8 banks 16 bits. This device achieves high speed transfer rates up to 1066Mb/sec/pin (DDR2-1066) for various applications. W971GG6JB is sorted into the following grade parts: -18, -25, 25L, 25I, 25A, 25K, -3 and -3A. The -18 grade parts is compliant to the DDR2-1066 (6-6-6) specification. The -25/25L/25I/25A/25K grade parts are  compliant  to  the  DDR2-800  (5-5-5)  specification  (the  25L  grade  parts  is  guaranteed  to  support IDD2P = 7 mA and IDD6 = 4 mA at commercial temperature, the 25I industrial grade parts is guaranteed to  support  -40°C  ≤  TCASE  ≤  95°C).  The  -3/-3A  grade  parts  is  compliant  to  the  DDR2-667  (5-5-5) specification. FEATURES Power Supply: VDD, VDDQ = 1.8 V ± 0.1 V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS and DQS) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK and CLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data and data mask are referenced to both edges of DQS Posted CAS programmable additive latency supported to make command and data bus efficiency Read Latency = Additive Latency plus CAS Latency (RL = AL + CL) Off-Chip-Driver  impedance  adjustment  (OCD)  and  On-Die-Termination  (ODT)  for  better  signal quality Auto-precharge operation for read and write bursts Auto Refresh and Self Refresh modes Precharged Power Down and Active Power Down Write Data Mask Write Latency = Read Latency - 1 (WL = RL - 1) Interface: SSTL_18 Packaged in WBGA 84 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant

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W971GG6JB-18 Alternative Parts

Image Part Compare Manufacturer Category Description
Image:W971GG6JB-18 Mfr.Part#:W971GG6JB-18 Compare: Current Part Manufacturers:Winbond electronics Category:RAM Memory Description:8m x 8 banks x 16bit ddr2 sdram
Image:K4T1G164QE-HCF7 Mfr.Part#:K4T1G164QE-HCF7 Compare: W971GG6JB-18 VS K4T1G164QE-HCF7 Manufacturers:Samsung Category: Description:1gb e-die ddr2 sdram(60fbga/84fbga with lead-free & halogen-free)
Image:W971GG6JB-3 Mfr.Part#:W971GG6JB-3 Compare: W971GG6JB-18 VS W971GG6JB-3 Manufacturers:Winbond electronics Category:RAM Memory Description:8m x 8 banks x 16bit ddr2 sdram
Image:W971GG6JB-25 Mfr.Part#:W971GG6JB-25 Compare: W971GG6JB-18 VS W971GG6JB-25 Manufacturers:Winbond electronics Category:RAM Memory Description:8m x 8 banks x 16bit ddr2 sdram