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TPS1120D vs TPS1120DR vs TPS1120DG4 Comparison

  • Hide Shared Attributes
    TPS1120D
    TPS1120D
    TPS1120DR
    TPS1120DR
    TPS1120DG4
    TPS1120DG4
  • Part No.
    TPS1120D
    TPS1120DR
    TPS1120DG4
  • Description
    SOIC P-CH 15V 1.17A
    SOIC P-CH 15V 1.17A
    SOIC P-CH 15V 1.17A
  • Manufacturer
    N/A
    N/A
    N/A
  • Classification
    MOSFETs
    MOSFETs
    MOSFETs
  • Reference Price(USD)
    $0.809
    $0.679
    $0.985
  • Inventory(pcs)
    4.3k
    140
    0
  • Case/Package
    SOIC-8
    SOIC-8
    SOIC-8
  • Number of Pins
    8
    8
    8
  • Number of Channels
    2
    -
    2
  • Power Dissipation
    840 mW
    0.84 W
    0.84 W
  • Number of Positions
    8
    -
    -
  • Rise Time
    10 ns
    10 ns
    10 ns
  • Voltage Rating (DC)
    -15.0 V
    -15.0 V
    -
  • Drain to Source Resistance (on) (Rds)
    0.18 Ω
    -
    180 mΩ
  • Output Voltage
    -15.0 V
    -
    -
  • Polarity
    P-Channel
    P-Channel
    P-Channel
  • HK STC License
    NLR
    -
    -
  • Threshold Voltage
    1.25 V
    -
    -
  • Drain to Source Voltage (Vds)
    15 V
    15 V
    15 V
  • Current Rating
    -1.70 A
    -1.17 A
    -
  • Breakdown Voltage (Drain to Source)
    15 V
    -
    -
  • Continuous Drain Current (Ids)
    1.17 A
    1.17 A
    1.17A
  • Operating Temperature
    -40℃ ~ 150℃ (TJ)
    -40℃ ~ 150℃ (TJ)
    -40℃ ~ 150℃ (TJ)
  • Material
    Silicon
    Silicon
    Silicon
  • Size-Length
    4.9 mm
    -
    4.9 mm
  • Size-Width
    3.91 mm
    -
    3.9 mm
  • Size-Height
    1.58 mm
    -
    1.75 mm
  • Mounting Style
    Surface Mount
    Surface Mount
    Surface Mount
  • Packaging
    Tube
    Tape & Reel (TR)
    Tube
  • REACH SVHC Compliance
    No SVHC
    -
    -
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Active
  • REACH SVHC Compliance Edition
    2014/12/17
    -
    -
  • Transistor Gender
    P Channel
    -
    -
  • Output Current (Max)
    1.7 A
    -
    -
  • Input Power (Max)
    840 mW
    840 mW
    840 mW
  • Fall Time
    2 ns
    2 ns
    10 ns
  • Operating Temperature (Max)
    125 ℃
    125 ℃
    125 ℃
  • Operating Temperature (Min)
    -40 ℃
    -40 ℃
    -40 ℃
  • Power Dissipation (Max)
    840 mW
    840 mW
    840 mW
  • Overview
    TPS1120D Product overview

    The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOSTM process, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120 includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in small-outline integrated circuit SOIC packages. The TPS1120 is characterized for an operating junction temperature range, TJ, from -40°C to 150°C. Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits. View datasheet View product folder

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    TPS1120DR Product overview

    Mosfet Array 2 P-Channel (Dual) 15V 1.17A 840mW Surface Mount 8-SOIC

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TPS1120DR Alternative Parts

Image Part Compare Manufacturer Category Description
Image:TPS1120DR Mfr.Part#:TPS1120DR Compare: Current Part Manufacturers:N/A Category:MOSFETs Description:Soic p-ch 15v 1.17a
Image:TPS1120D Mfr.Part#:TPS1120D Compare: TPS1120DR VS TPS1120D Manufacturers:N/A Category:MOSFETs Description:Soic p-ch 15v 1.17a
Image:TPS1120DG4 Mfr.Part#:TPS1120DG4 Compare: TPS1120DR VS TPS1120DG4 Manufacturers:N/A Category:MOSFETs Description:Soic p-ch 15v 1.17a
Image:TPS1120DRG4 Mfr.Part#:TPS1120DRG4 Compare: TPS1120DR VS TPS1120DRG4 Manufacturers:N/A Category:MOSFETs Description:Soic p-ch 15v 1.17a