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STFW4N150 vs STW4N150 Comparison

  • Hide Shared Attributes
    STFW4N150
    STFW4N150
    STW4N150
    STW4N150
  • Part No.
    STFW4N150
    STW4N150
  • Description
    N-channel 1500V - 5Ω - 4A - PowerMESH™ Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3pF
    N-channel 1500V - 5Ω - 4A - PowerMESH™ Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3pF
  • Manufacturer
    St microelectronics
    St microelectronics
  • Classification
    MOSFETs
    MOSFETs
  • Reference Price(USD)
    $1.722
    $1.794
  • Inventory(pcs)
    178
    616
  • Case/Package
    TO-3-3
    TO-247-3
  • Number of Pins
    3
    3
  • Number of Channels
    -
    1
  • Power Dissipation
    63 W
    160 W
  • Number of Positions
    3
    3
  • Rise Time
    30 ns
    30 ns
  • Input Capacitance
    -
    1.30 nF
  • Voltage Rating (DC)
    -
    1.50 kV
  • Drain to Source Resistance (on) (Rds)
    5 Ω
    7 Ω
  • Polarity
    N-Channel
    N-Channel
  • ECCN Code
    EAR99
    EAR99
  • Threshold Voltage
    4 V
    4 V
  • Drain to Source Voltage (Vds)
    1.5 kV
    1500 V
  • Current Rating
    -
    4.00 A
  • Breakdown Voltage (Drain to Source)
    -
    1.50 kV
  • Continuous Drain Current (Ids)
    -
    4.00 A
  • Operating Temperature
    150℃ (TJ)
    150℃ (TJ)
  • Gate Charge
    -
    50.0 nC
  • Size-Length
    15.7 mm
    15.75 mm
  • Size-Width
    5.7 mm
    5.15 mm
  • Size-Height
    26.7 mm
    20.15 mm
  • Mounting Style
    Through Hole
    Through Hole
  • Packaging
    Tube
    Tube
  • REACH SVHC Compliance
    No SVHC
    No SVHC
  • Lead-Free Status
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
  • REACH SVHC Compliance Edition
    2014/06/16
    2015/12/17
  • Input Power (Max)
    63 W
    160 W
  • Transistor Gender
    N Channel
    N Channel
  • Fall Time
    45 ns
    45 ns
  • Input Capacitance (Ciss)
    1300pF @25V(Vds)
    1300pF @25V(Vds)
  • Industrial-Spec
    Yes
    Yes
  • Operating Temperature (Max)
    150 ℃
    150 ℃
  • Operating Temperature (Min)
    -55 ℃
    -55 ℃
  • Power Dissipation (Max)
    63W (Tc)
    160000 mW
  • Overview
    STFW4N150 Product overview

    The STFW4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate charge and switching characteristics. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.

    .
    100% Avalanche tested
    .
    Intrinsic capacitances and Qg minimized
    .
    High speed switching
    .
    High peak power
    .
    High ruggedness capability
    View all
    STW4N150 Product overview

    The STW4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate charge and switching characteristics. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.

    .
    100% Avalanche tested
    .
    Intrinsic capacitances and Qg minimized
    .
    High speed switching
    View all

STW4N150 Alternative Parts

Image Part Compare Manufacturer Category Description
Image:STW4N150 Mfr.Part#:STW4N150 Compare: Current Part Manufacturers:St microelectronics Category:MOSFETs Description:N-channel 1500v - 5ω - 4a - powermesh™ power mosfet to-220 - to-220fh - to-247 - to-3pf
Image:STFW4N150 Mfr.Part#:STFW4N150 Compare: STW4N150 VS STFW4N150 Manufacturers:St microelectronics Category:MOSFETs Description:N-channel 1500v - 5ω - 4a - powermesh™ power mosfet to-220 - to-220fh - to-247 - to-3pf