The STP55NF06 is a 60V N-channel Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
The STP60NF06 is a 60V N-channel STripFET™ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
The FQP50N06L is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This product is general usage and suitable for many different applications.