The S29GL01GS11TFI010 is a 1GB GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory fabricated on 65nm process technology. This device offers a fast page access time as fast as 110ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays eMBedded applications that require higher density, better performance and lower power consumption.
GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family S29GL01GS 1 Gbit (128 Mbyte) S29GL512S 512 Mbit (64 Mbyte) S29GL256S 256 Mbit (32 Mbyte) S29GL128S 128 Mbit (16 Mbyte) CMOS 3.0 Volt Core with Versatile I/O General Description The Spansion® S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time asfast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting infaster effective programming time than standard programming algorithms. Thismakes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption. Distinctive Characteristics 65 nm MirrorBit Eclipse Technology Single supply (VCC) for read / program / erase (2.7V to 3.6V) Versatile I/O Feature – Wide I/O voltage range (VIO): 1.65V to VCC x16 data bus Asynchronous 32-byte Page read 512-byte Programming Buffer – Programming in Page multiples, up to a maximum of 512 bytes Single word and multiple program on same word options Sector Erase – Uniform 128-kbyte sectors Suspend and Resume commands for Program and Erase operations Status Register, Data Polling, and Ready/Busy pin methods to determine device status Advanced Sector Protection (ASP) – Volatile and non-volatile protection methods for each sector Separate 1024-byte One Time Program (OTP) array with two lockable regions Common Flash Interface (CFI) parameter table Temperature Range – Industrial (-40°C to +85°C) – In-Cabin (-40°C to +105°C) 100,000 erase cycles for any sector typical 20-year data retention typical Packaging Options – 56-pin TSOP – 64-ball LAA Fortified BGA, 13 mm x 11 mm – 64-ball LAE Fortified BGA, 9 mm x 9 mm – 56-ball VBU Fortified BGA, 9 mm x 7 mm
1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption. Distinctive Characteristics ■ Single 3V read/program/erase (2.7-3.6 V) ■ Enhanced VersatileI/O™ control – All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC ■ 90 nm MirrorBit process technology ■ 8-word/16-byte page read buffer ■ 32-word/64-byte write buffer reduces overall programming time for multiple-word updates ■ Secured Silicon Sector region – 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number – Can be programmed and locked at the factory or by the customer ■ Uniform 64 Kword/128 Kbyte Sector Architecture – S29GL01GP: One thousand twenty-four sectors – S29GL512P: Five hundred twelve sectors – S29GL256P: Two hundred fifty-six sectors – S29GL128P: One hundred twenty-eight sectors ■ 100,000 erase cycles per sector typical ■ 20-year data retention typical ■ Offered Packages – 56-pin TSOP – 64-ball Fortified BGA ■ Suspend and Resume commands for Program and Erase operations ■ Write operation status bits indicate program and erase operation completion ■ Unlock Bypass Program command to reduce programming time ■ Support for CFI (Common Flash Interface) ■ Persistent and Password methods of Advanced Sector Protection ■ WP#/ACC input – Accelerates programming time (when VHH is applied) for greater throughput during system production – Protects first or last sector regardless of sector protection settings ■ Hardware reset input (RESET#) resets device ■ Ready/Busy# output (RY/BY#) detects program or erase cycle completion