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S29GL01GS11TFI010 vs S29GL01GS11TFI020 vs S29GL01GP11TFIR10 Comparison

  • Hide Shared Attributes
    S29GL01GS11TFI010
    S29GL01GS11TFI010
    S29GL01GS11TFI020
    S29GL01GS11TFI020
    S29GL01GP11TFIR10
    S29GL01GP11TFIR10
  • Part No.
    S29GL01GS11TFI010
    S29GL01GS11TFI020
    S29GL01GP11TFIR10
  • Description
    NOR Flash Parallel 3V/3.3V 1Gbit 64M x 16Bit 110ns 56Pin TSOP Tray
    NOR Flash Parallel 3V/3.3V 1Gbit 64M x 16Bit 110ns 56Pin TSOP Tray
    NOR Flash Parallel 3V/3.3V 1Gbit 128M/64M x 8Bit/16Bit 110ns 56Pin TSOP Tray
  • Manufacturer
    Spansion
    Spansion
    Spansion
  • Classification
    Flash Memory
    Flash Memory
    Flash Memory
  • Reference Price(USD)
    $3.947
    $3.947
    $20.850
  • Inventory(pcs)
    0
    0
    0
  • Case/Package
    TSOP-56
    TSOP-56
    TSOP-64
  • Number of Pins
    56
    56
    56
  • Memory Size
    128000000 B
    128000000 B
    125000000 B
  • Number of Positions
    56
    -
    56
  • Access Time
    110 ns
    110 ns
    110 ns
  • Supply Voltage (DC)
    2.70V (min)
    2.70V (min)
    3.00V (min)
  • ECCN Code
    -
    -
    3A991.b.1.a
  • Supply Current
    60 mA
    -
    110 mA
  • Operating Temperature
    40℃ ~ 85℃
    40℃ ~ 85℃
    -40℃ ~ 85℃
  • Mounting Style
    Surface Mount
    Surface Mount
    Surface Mount
  • Packaging
    Each
    Tray
    Each
  • REACH SVHC Compliance
    No SVHC
    -
    No SVHC
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Unknown
    Unknown
    Active
  • Operating Temperature (Min)
    -40 ℃
    -40 ℃
    -40 ℃
  • Supply Voltage (Max)
    3.6 V
    3.6 V
    3.6 V
  • REACH SVHC Compliance Edition
    2015/12/17
    2015/12/17
    2015/12/17
  • Supply Voltage (Min)
    2.7 V
    2.7 V
    3 V
  • Supply Voltage
    2.7V ~ 3.6V
    -
    3V, 3.3V
  • Industrial-Spec
    Yes
    -
    -
  • Access Time(Max)
    110 ns
    -
    110 ns
  • Operating Temperature (Max)
    85 ℃
    85 ℃
    85 ℃
  • Overview
    S29GL01GS11TFI010 Product overview

    The S29GL01GS11TFI010 is a 1GB GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory fabricated on 65nm process technology. This device offers a fast page access time as fast as 110ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays eMBedded applications that require higher density, better performance and lower power consumption.

    .
    Highest address sector protected
    .
    Versatile I/O™ - Wide I/O voltage range of 1.65V to VCC
    .
    Asynchronous 32-byte page read
    .
    Suspend and resume commands for program and erase operations
    .
    Status register, data polling and ready/busy pin methods to determine device status
    .
    Advanced sector protection - Volatile and non-volatile protection methods for each sector
    .
    Common flash interface (CFI) parameter table
    .
    100000 Erase cycles for any sector typical
    .
    20 Years data retention typical
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    S29GL01GS11TFI020 Product overview

    GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family S29GL01GS  1 Gbit  (128 Mbyte) S29GL512S  512 Mbit  (64 Mbyte) S29GL256S  256 Mbit  (32 Mbyte) S29GL128S  128 Mbit  (16 Mbyte) CMOS 3.0 Volt Core with Versatile I/O General Description The Spansion® S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time asfast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting infaster effective programming time than standard programming algorithms. Thismakes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption. Distinctive Characteristics 65 nm MirrorBit Eclipse Technology Single supply (VCC) for read / program / erase (2.7V to 3.6V) Versatile I/O Feature        – Wide I/O voltage range (VIO): 1.65V to VCC x16 data bus Asynchronous 32-byte Page read 512-byte Programming Buffer        – Programming in Page multiples, up to a maximum of 512 bytes Single word and multiple program on same word options Sector Erase        – Uniform 128-kbyte sectors Suspend and Resume commands for Program and Erase operations Status Register, Data Polling, and Ready/Busy pin methods to determine device status Advanced Sector Protection (ASP)      – Volatile and non-volatile protection methods for each sector Separate 1024-byte One Time Program (OTP) array with two lockable regions Common Flash Interface (CFI) parameter table Temperature Range      – Industrial (-40°C to +85°C)      – In-Cabin (-40°C to +105°C) 100,000 erase cycles for any sector typical 20-year data retention typical Packaging Options      – 56-pin TSOP      – 64-ball LAA Fortified BGA, 13 mm x 11 mm      – 64-ball LAE Fortified BGA, 9 mm x 9 mm      – 56-ball VBU Fortified BGA, 9 mm x 7 mm

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    S29GL01GP11TFIR10 Product overview

    1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology General Description The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption. Distinctive Characteristics ■ Single 3V read/program/erase (2.7-3.6 V) ■ Enhanced VersatileI/O™ control    – All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC ■ 90 nm MirrorBit process technology ■ 8-word/16-byte page read buffer ■ 32-word/64-byte write buffer reduces overall programming time for multiple-word updates ■ Secured Silicon Sector region    – 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number    – Can be programmed and locked at the factory or by the customer ■ Uniform 64 Kword/128 Kbyte Sector Architecture    – S29GL01GP: One thousand twenty-four sectors    – S29GL512P: Five hundred twelve sectors    – S29GL256P: Two hundred fifty-six sectors    – S29GL128P: One hundred twenty-eight sectors ■ 100,000 erase cycles per sector typical ■ 20-year data retention typical ■ Offered Packages    – 56-pin TSOP    – 64-ball Fortified BGA ■ Suspend and Resume commands for Program and Erase operations ■ Write operation status bits indicate program and erase operation completion ■ Unlock Bypass Program command to reduce programming time ■ Support for CFI (Common Flash Interface) ■ Persistent and Password methods of Advanced Sector Protection ■ WP#/ACC input    – Accelerates programming time (when VHH is applied) for greater throughput during system production    – Protects first or last sector regardless of sector protection settings ■ Hardware reset input (RESET#) resets device ■ Ready/Busy# output (RY/BY#) detects program or erase cycle completion

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S29GL01GS11TFI010 Alternative Parts

Image Part Compare Manufacturer Category Description
Image:S29GL01GS11TFI010 Mfr.Part#:S29GL01GS11TFI010 Compare: Current Part Manufacturers:Spansion Category:Flash Memory Description:Nor flash parallel 3v/3.3v 1gbit 64m x 16bit 110ns 56pin tsop tray
Image:S29GL01GS11TFIV10 Mfr.Part#:S29GL01GS11TFIV10 Compare: S29GL01GS11TFI010 VS S29GL01GS11TFIV10 Manufacturers:Spansion Category:Flash Memory Description:Nor flash parallel 3v/3.3v 1gbit 64m x 16bit 110ns 56pin tsop tray
Image:S29GL01GS11TFI020 Mfr.Part#:S29GL01GS11TFI020 Compare: S29GL01GS11TFI010 VS S29GL01GS11TFI020 Manufacturers:Spansion Category:Flash Memory Description:Nor flash parallel 3v/3.3v 1gbit 64m x 16bit 110ns 56pin tsop tray
Image:S29GL01GS12TFIV10 Mfr.Part#:S29GL01GS12TFIV10 Compare: S29GL01GS11TFI010 VS S29GL01GS12TFIV10 Manufacturers:Spansion Category:Flash Memory Description:Nor flash parallel 3v/3.3v 1gbit 64m x 16bit 120ns 56pin tsop tray